GB948997A - Method of preparing monocrystalline layers - Google Patents
Method of preparing monocrystalline layersInfo
- Publication number
- GB948997A GB948997A GB953462A GB953462A GB948997A GB 948997 A GB948997 A GB 948997A GB 953462 A GB953462 A GB 953462A GB 953462 A GB953462 A GB 953462A GB 948997 A GB948997 A GB 948997A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diaphragm
- carrier
- substrate
- deposited
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
<PICT:0948997/C3/1> A monocrystalline layer of a semi-conductor is vapour deposited on a substrate such as quartz or rock salt, through an adjustable aperture such as an iris diaphragm, placed between the source and the substrate, so that the initial deposit is in the form of a punctiform speck and the aperture is then enlarged to give the required area of deposit. The coating materials are Si, Ge, or other substances of Group 4 of the Periodic Table and the intermetallic compounds Aiii Bv, Aii Bvi, Ai Bvii. Doping materials such as phosphorus and boron may also be evaporated either separately or together with the semi-conductor materials. As shown in the drawing an iris diaphragm 6 is placed between a source rod 1 and a carrier 4 heated by heater 5, the diaphragm being closed at the start so that the carrier can be outgassed and the initial vapour which may be contaminated is deposited on the diaphragm. The carrier 4 is heated to below the melting temperature of the coating material and several layers of material of different conductivity may be deposited by evaporating rods of different conductivity through separate diaphragms. The substrate may also be moved relative to the diaphragm which may be in the form of a wedge shaped slot.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1961S0072962 DE1262979B (en) | 1961-03-14 | 1961-03-14 | Method and device for the production of monocrystalline layers by vapor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
GB948997A true GB948997A (en) | 1964-02-05 |
Family
ID=7503587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB953462A Expired GB948997A (en) | 1961-03-14 | 1962-03-13 | Method of preparing monocrystalline layers |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH395680A (en) |
DE (1) | DE1262979B (en) |
FR (1) | FR1317607A (en) |
GB (1) | GB948997A (en) |
NL (1) | NL275889A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1298512B (en) * | 1964-03-13 | 1969-07-03 | Telefunken Patent | Device for vapor deposition of monocrystalline layers on substrates |
US3514320A (en) * | 1969-02-10 | 1970-05-26 | William H Vaughan | Method of forming single crystal films by nonepitaxial growth |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE514927A (en) * | 1952-01-22 | |||
DE1057845B (en) * | 1954-03-10 | 1959-05-21 | Licentia Gmbh | Process for the production of monocrystalline semiconducting compounds |
DE1054802B (en) * | 1956-03-05 | 1959-04-09 | Westinghouse Electric Corp | Process for the evaporation of substances, in particular for the creation of the transition zones (junctions) of transistors |
BE555438A (en) * | 1956-03-05 |
-
0
- NL NL275889D patent/NL275889A/xx unknown
- FR FR1317607D patent/FR1317607A/fr not_active Expired
-
1961
- 1961-03-14 DE DE1961S0072962 patent/DE1262979B/en active Pending
-
1962
- 1962-03-01 CH CH254362A patent/CH395680A/en unknown
- 1962-03-13 GB GB953462A patent/GB948997A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1298512B (en) * | 1964-03-13 | 1969-07-03 | Telefunken Patent | Device for vapor deposition of monocrystalline layers on substrates |
US3514320A (en) * | 1969-02-10 | 1970-05-26 | William H Vaughan | Method of forming single crystal films by nonepitaxial growth |
Also Published As
Publication number | Publication date |
---|---|
NL275889A (en) | |
CH395680A (en) | 1965-07-15 |
DE1262979B (en) | 1968-03-14 |
FR1317607A (en) | 1963-05-08 |
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