CH395680A - Process for producing single-crystal layers - Google Patents

Process for producing single-crystal layers

Info

Publication number
CH395680A
CH395680A CH254362A CH254362A CH395680A CH 395680 A CH395680 A CH 395680A CH 254362 A CH254362 A CH 254362A CH 254362 A CH254362 A CH 254362A CH 395680 A CH395680 A CH 395680A
Authority
CH
Switzerland
Prior art keywords
crystal layers
producing single
producing
crystal
layers
Prior art date
Application number
CH254362A
Other languages
German (de)
Inventor
Werner Dr Spielmann
Zerbst Manfred Dr Dipl-Phys
Raetzel Werner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH395680A publication Critical patent/CH395680A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
CH254362A 1961-03-14 1962-03-01 Process for producing single-crystal layers CH395680A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0072962 DE1262979B (en) 1961-03-14 1961-03-14 Method and device for the production of monocrystalline layers by vapor deposition

Publications (1)

Publication Number Publication Date
CH395680A true CH395680A (en) 1965-07-15

Family

ID=7503587

Family Applications (1)

Application Number Title Priority Date Filing Date
CH254362A CH395680A (en) 1961-03-14 1962-03-01 Process for producing single-crystal layers

Country Status (5)

Country Link
CH (1) CH395680A (en)
DE (1) DE1262979B (en)
FR (1) FR1317607A (en)
GB (1) GB948997A (en)
NL (1) NL275889A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298512B (en) * 1964-03-13 1969-07-03 Telefunken Patent Device for vapor deposition of monocrystalline layers on substrates
US3514320A (en) * 1969-02-10 1970-05-26 William H Vaughan Method of forming single crystal films by nonepitaxial growth

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514927A (en) * 1952-01-22
DE1057845B (en) * 1954-03-10 1959-05-21 Licentia Gmbh Process for the production of monocrystalline semiconducting compounds
BE555438A (en) * 1956-03-05
DE1054802B (en) * 1956-03-05 1959-04-09 Westinghouse Electric Corp Process for the evaporation of substances, in particular for the creation of the transition zones (junctions) of transistors

Also Published As

Publication number Publication date
DE1262979B (en) 1968-03-14
GB948997A (en) 1964-02-05
FR1317607A (en) 1963-05-08
NL275889A (en)

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