GB915908A - Process for growing crystals - Google Patents

Process for growing crystals

Info

Publication number
GB915908A
GB915908A GB2666060A GB2666060A GB915908A GB 915908 A GB915908 A GB 915908A GB 2666060 A GB2666060 A GB 2666060A GB 2666060 A GB2666060 A GB 2666060A GB 915908 A GB915908 A GB 915908A
Authority
GB
United Kingdom
Prior art keywords
pulling
crystal
melt
increasing
pict
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2666060A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB915908A publication Critical patent/GB915908A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0915908/III/1> <PICT:0915908/III/2> <PICT:0915908/III/3> In pulling a dendritic crystal from a supercooled melt using a seed crystal which has at least one interior twin plane and is oriented as shown in Fig. 2, thickening of the pulled crystal is prevented by periodically increasing the rate of pulling and/or increasing the temperature of the melt and then re-establishing the prior pulling conditions so as to produce a neck 62 (Fig. 3) of at least 2,5 mm., e.g. 3-50 mm., in length. Pulling of the neck may be effected by increasing the pulling rate 2-25 times and/or increasing the temperature of the melt to a value of 2-10 DEG C. below the m.p. Super-cooling before pulling may be effected in 5-15 sec. to a temperature of 1 DEG -20 DEG C. below the m.p. after introduction of the seed crystal. Pulling may be effected in an atmosphere of one or more of argon, helium, hydrogen, or nitrogen, or in a vacuum. The pulled crystal may be of silicon, germanium, or gallium arsenide. As shown in Fig. 1, a dendritic crystal 26 is pulled from a melt in an inductively heated graphite crucible 16 through an aperture in a lid 22. Examples are given. Specifications 889,058, 911,359 and 913,674 are referred to.
GB2666060A 1959-08-04 1960-08-02 Process for growing crystals Expired GB915908A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83150959A 1959-08-04 1959-08-04

Publications (1)

Publication Number Publication Date
GB915908A true GB915908A (en) 1963-01-16

Family

ID=25259222

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2666060A Expired GB915908A (en) 1959-08-04 1960-08-02 Process for growing crystals

Country Status (2)

Country Link
CH (1) CH401005A (en)
GB (1) GB915908A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation

Also Published As

Publication number Publication date
CH401005A (en) 1965-10-31

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