GB9117680D0 - Electronic matrix array devices - Google Patents

Electronic matrix array devices

Info

Publication number
GB9117680D0
GB9117680D0 GB919117680A GB9117680A GB9117680D0 GB 9117680 D0 GB9117680 D0 GB 9117680D0 GB 919117680 A GB919117680 A GB 919117680A GB 9117680 A GB9117680 A GB 9117680A GB 9117680 D0 GB9117680 D0 GB 9117680D0
Authority
GB
United Kingdom
Prior art keywords
matrix array
array devices
electronic matrix
electronic
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB919117680A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB919117680A priority Critical patent/GB9117680D0/en
Publication of GB9117680D0 publication Critical patent/GB9117680D0/en
Priority to US07/928,926 priority patent/US5412614A/en
Priority to EP92202479A priority patent/EP0528490B1/en
Priority to DE69225280T priority patent/DE69225280T2/de
Priority to JP21797992A priority patent/JP3465911B2/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Memories (AREA)
  • Shift Register Type Memory (AREA)
GB919117680A 1991-08-16 1991-08-16 Electronic matrix array devices Pending GB9117680D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB919117680A GB9117680D0 (en) 1991-08-16 1991-08-16 Electronic matrix array devices
US07/928,926 US5412614A (en) 1991-08-16 1992-08-11 Electronic matrix array devices and systems incorporating such devices
EP92202479A EP0528490B1 (en) 1991-08-16 1992-08-11 Electronic matrix array devices and systems incorporating such devices
DE69225280T DE69225280T2 (de) 1991-08-16 1992-08-11 Elektronische Matritzen-Array-Einrichtungen und Systeme zur Verwendung solcher Einrichtungen
JP21797992A JP3465911B2 (ja) 1991-08-16 1992-08-17 電子式マトリックスアレイ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919117680A GB9117680D0 (en) 1991-08-16 1991-08-16 Electronic matrix array devices

Publications (1)

Publication Number Publication Date
GB9117680D0 true GB9117680D0 (en) 1991-10-02

Family

ID=10700057

Family Applications (1)

Application Number Title Priority Date Filing Date
GB919117680A Pending GB9117680D0 (en) 1991-08-16 1991-08-16 Electronic matrix array devices

Country Status (5)

Country Link
US (1) US5412614A (enExample)
EP (1) EP0528490B1 (enExample)
JP (1) JP3465911B2 (enExample)
DE (1) DE69225280T2 (enExample)
GB (1) GB9117680D0 (enExample)

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US5818749A (en) * 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
GB9524560D0 (en) * 1995-12-01 1996-01-31 Philips Electronics Nv Multiplexer circuit
GB9615836D0 (en) * 1996-07-27 1996-09-11 Philips Electronics Nv Multiplexer circuit
GB9620762D0 (en) * 1996-10-04 1996-11-20 Philips Electronics Nv Charge measurement circuit
DE69820238T2 (de) * 1997-03-27 2004-10-07 Hewlett Packard Co Adressierung von arrays mit elektrisch steuerbaren elementen
KR100596123B1 (ko) * 1997-03-27 2006-07-05 휴렛-팩커드 컴퍼니(델라웨어주법인) 어드레스 디코더 시스템
US6130835A (en) * 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
US8009348B2 (en) * 1999-05-03 2011-08-30 E Ink Corporation Machine-readable displays
WO2002091476A1 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
JP4731794B2 (ja) * 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法
JP4886160B2 (ja) * 2001-05-07 2012-02-29 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド セルフアセンブリによるポリマーフィルムを用いた記憶装置およびその製造方法
AU2002340793A1 (en) * 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
KR100860134B1 (ko) 2001-08-13 2008-09-25 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 셀
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
CN103890853A (zh) 2011-11-04 2014-06-25 惠普发展公司，有限责任合伙企业 具有金属-绝缘体-金属阈值开关的解码器电路
US8928560B2 (en) 2012-03-20 2015-01-06 Hewlett-Packard Development Company, L.P. Display matrix with resistance switches
FR3007835B1 (fr) * 2013-06-28 2015-06-19 Commissariat Energie Atomique Membrane et systeme de controle d'une ouverture de la membrane
US9711213B2 (en) 2014-09-04 2017-07-18 Micron Technology, Inc. Operational signals generated from capacitive stored charge
US10922465B2 (en) * 2018-09-27 2021-02-16 Arm Limited Multi-input logic circuitry
CN113515908B (zh) * 2021-04-08 2024-11-19 国微集团(深圳)有限公司 驱动矩阵及其生成方法、门电路信息的表示方法、图

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US3245052A (en) * 1962-05-17 1966-04-05 Rca Corp Content addressed memory
US3829846A (en) * 1972-11-15 1974-08-13 Honeywell Inc Multi-function logic module employing read-only associative memory arrays
US3781553A (en) * 1972-11-28 1973-12-25 B Podlaskin Apparatus for analyzing an image
US4103349A (en) * 1977-06-16 1978-07-25 Rockwell International Corporation Output address decoder with gating logic for increased speed and less chip area
IL61671A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Diode and rom or eeprom devices using it
JPS57164494A (en) * 1981-04-02 1982-10-09 Nec Corp Semiconductor device
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
US4679085A (en) * 1984-12-04 1987-07-07 Energy Conversion Devices, Inc. Digital integrated electronic storage system for video and audio playback
JPH0677186B2 (ja) * 1985-11-27 1994-09-28 日本電気株式会社 薄膜デコ−ダ積層型液晶表示装置
US4782340A (en) * 1986-08-22 1988-11-01 Energy Conversion Devices, Inc. Electronic arrays having thin film line drivers
US4845679A (en) * 1987-03-30 1989-07-04 Honeywell Inc. Diode-FET logic circuitry
JPH0233799A (ja) * 1988-07-22 1990-02-02 Toshiba Corp 半導体記録装置のデコード方法およびその装置
FR2641645B1 (fr) * 1988-12-27 1991-04-26 Paris Chambre Commerce Ind Procede de realisation d'un composant mim et application a la realisation d'un ecran plat ou d'une ram

Also Published As

Publication number Publication date
DE69225280D1 (de) 1998-06-04
JPH05211301A (ja) 1993-08-20
EP0528490B1 (en) 1998-04-29
EP0528490A2 (en) 1993-02-24
EP0528490A3 (enExample) 1995-04-19
DE69225280T2 (de) 1998-11-19
US5412614A (en) 1995-05-02
JP3465911B2 (ja) 2003-11-10

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