GB902779A - Improvements in or relating to semi-conductor devices - Google Patents
Improvements in or relating to semi-conductor devicesInfo
- Publication number
- GB902779A GB902779A GB2937260A GB2937260A GB902779A GB 902779 A GB902779 A GB 902779A GB 2937260 A GB2937260 A GB 2937260A GB 2937260 A GB2937260 A GB 2937260A GB 902779 A GB902779 A GB 902779A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- bores
- pellets
- wafer
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000008188 pellet Substances 0.000 abstract 6
- 238000005275 alloying Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES64589A DE1194502B (de) | 1959-08-26 | 1959-08-26 | Legierungsverfahren zum Herstellen von Halbleiteranordnungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB902779A true GB902779A (en) | 1962-08-09 |
Family
ID=7497306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2937260A Expired GB902779A (en) | 1959-08-26 | 1960-08-25 | Improvements in or relating to semi-conductor devices |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH379642A (enrdf_load_stackoverflow) |
| DE (1) | DE1194502B (enrdf_load_stackoverflow) |
| GB (1) | GB902779A (enrdf_load_stackoverflow) |
| NL (1) | NL255159A (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1133473B (de) | 1958-08-07 | 1962-07-19 | Siemens Ag | Legierungsverfahren zum Herstellen von Halbleiteranordnungen |
-
0
- NL NL255159D patent/NL255159A/xx unknown
-
1959
- 1959-08-26 DE DES64589A patent/DE1194502B/de active Pending
-
1960
- 1960-08-04 CH CH887260A patent/CH379642A/de unknown
- 1960-08-25 GB GB2937260A patent/GB902779A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH379642A (de) | 1964-07-15 |
| NL255159A (enrdf_load_stackoverflow) | |
| DE1194502B (de) | 1965-06-10 |
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