GB895886A - Method of fabricating thin film gate conductors - Google Patents
Method of fabricating thin film gate conductorsInfo
- Publication number
- GB895886A GB895886A GB44815/60A GB4481560A GB895886A GB 895886 A GB895886 A GB 895886A GB 44815/60 A GB44815/60 A GB 44815/60A GB 4481560 A GB4481560 A GB 4481560A GB 895886 A GB895886 A GB 895886A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tin
- rest
- thin film
- film
- edges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/84—Switching means for devices switchable between superconducting and normal states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
Abstract
895886 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORPORATION 30 Dec 1960 [30 March 1960] 44815/60 Headings H1A A5 and A4D A thin film super-conductive gate conductor of the type which comprises a layer of superconductive material, e.g. tin, deposited through a pattern mask on to a substrate, e.g. glass, the transition from super-conductivity to the resistive state is made more abrupt by dissociating the edges of the film from the rest by heating. A suitable temperature is about 80% of the melting temperature (i.e. about 190C in the case of tin) and this is maintained for one and one-half minutes. The treatment is said to cause the edges of the film, which are thinner than the rest, to form individual islands of material which are dissociated from the rest. The substrate may be baked prior to the evaporation of the layer. The Specification refers to the use of gate and control conductors of tin, lead, tantalum and niobium. Specifications 862178 and 889729 are referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US895886XA | 1960-03-30 | 1960-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB895886A true GB895886A (en) | 1962-05-09 |
Family
ID=22218472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44815/60A Expired GB895886A (en) | 1960-03-30 | 1960-12-30 | Method of fabricating thin film gate conductors |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB895886A (en) |
-
1960
- 1960-12-30 GB GB44815/60A patent/GB895886A/en not_active Expired
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