GB871839A - Improvements in or relating to processes for the production of semiconductive bodies - Google Patents
Improvements in or relating to processes for the production of semiconductive bodiesInfo
- Publication number
- GB871839A GB871839A GB20207/58A GB2020758A GB871839A GB 871839 A GB871839 A GB 871839A GB 20207/58 A GB20207/58 A GB 20207/58A GB 2020758 A GB2020758 A GB 2020758A GB 871839 A GB871839 A GB 871839A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solute
- melt
- ratio
- solutes
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 5
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000155 melt Substances 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 229910052733 gallium Inorganic materials 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000004615 ingredient Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000012190 activator Substances 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002194 freeze distillation Methods 0.000 abstract 1
- 230000008014 freezing Effects 0.000 abstract 1
- 238000007710 freezing Methods 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US667956A US2861905A (en) | 1957-06-25 | 1957-06-25 | Process for controlling excess carrier concentration in a semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB871839A true GB871839A (en) | 1961-07-05 |
Family
ID=24680369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB20207/58A Expired GB871839A (en) | 1957-06-25 | 1958-06-24 | Improvements in or relating to processes for the production of semiconductive bodies |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2861905A (enrdf_load_stackoverflow) |
| BE (1) | BE567569A (enrdf_load_stackoverflow) |
| CH (1) | CH402425A (enrdf_load_stackoverflow) |
| DE (1) | DE1215658B (enrdf_load_stackoverflow) |
| FR (1) | FR1208294A (enrdf_load_stackoverflow) |
| GB (1) | GB871839A (enrdf_load_stackoverflow) |
| NL (2) | NL229017A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222742A (zh) * | 2016-09-12 | 2016-12-14 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅及其制备方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3070465A (en) * | 1957-07-26 | 1962-12-25 | Sony Corp | Method of manufacturing a grown type semiconductor device |
| FR1228285A (fr) * | 1959-03-11 | 1960-08-29 | Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes | |
| NL247854A (enrdf_load_stackoverflow) * | 1960-01-28 | |||
| US3248677A (en) * | 1961-10-27 | 1966-04-26 | Ibm | Temperature compensated semiconductor resistor |
| NL292671A (enrdf_load_stackoverflow) * | 1962-05-14 | |||
| DE3049376A1 (de) | 1980-12-29 | 1982-07-29 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze |
| JPS5914440B2 (ja) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | ＣａＡｓ単結晶への硼素のド−ピング方法 |
| US10724148B2 (en) | 2014-01-21 | 2020-07-28 | Infineon Technologies Ag | Silicon ingot and method of manufacturing a silicon ingot |
| US10337117B2 (en) | 2014-11-07 | 2019-07-02 | Infineon Technologies Ag | Method of manufacturing a silicon ingot and silicon ingot |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE528916A (enrdf_load_stackoverflow) * | 1953-05-18 |
-
0
- NL NL112556D patent/NL112556C/xx active
- BE BE567569D patent/BE567569A/xx unknown
- NL NL229017D patent/NL229017A/xx unknown
-
1957
- 1957-06-25 US US667956A patent/US2861905A/en not_active Expired - Lifetime
-
1958
- 1958-05-08 DE DEW23291A patent/DE1215658B/de active Pending
- 1958-06-03 FR FR1208294D patent/FR1208294A/fr not_active Expired
- 1958-06-24 GB GB20207/58A patent/GB871839A/en not_active Expired
- 1958-06-25 CH CH6104158A patent/CH402425A/fr unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222742A (zh) * | 2016-09-12 | 2016-12-14 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅及其制备方法 |
| CN106222742B (zh) * | 2016-09-12 | 2019-01-29 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| NL112556C (enrdf_load_stackoverflow) | 1900-01-01 |
| DE1215658B (de) | 1966-05-05 |
| BE567569A (enrdf_load_stackoverflow) | 1900-01-01 |
| CH402425A (fr) | 1965-11-15 |
| NL229017A (enrdf_load_stackoverflow) | 1900-01-01 |
| FR1208294A (fr) | 1960-02-23 |
| US2861905A (en) | 1958-11-25 |
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