GB859005A - Improvements in or relating to semi-conductive devices - Google Patents

Improvements in or relating to semi-conductive devices

Info

Publication number
GB859005A
GB859005A GB2069357A GB2069357A GB859005A GB 859005 A GB859005 A GB 859005A GB 2069357 A GB2069357 A GB 2069357A GB 2069357 A GB2069357 A GB 2069357A GB 859005 A GB859005 A GB 859005A
Authority
GB
United Kingdom
Prior art keywords
support member
bore
transistor
semi
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2069357A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB859005A publication Critical patent/GB859005A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

859,005. Semi-conductive devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. July 1, 1957 [July 4, 1956], No. 20693/57. Class 37 A semi-conductor element, e.g. a transistor or a crystal diode, is secured directly or indirectly to a cooling plate by a thermal shrinking step, i.e. by the production of a temperature difference between the parts to be joined, the colder part being introduced into an aperture in the hotter part so that, at equal temperatures, one part is clamped tightly by the other part. As shown, a transistor comprising a body 1 of n-type Ge, an emitter 4, an annular base electrode 5, and a collector 6 consisting of a layer of In, is soldered to a cylindrical support member 2 of Au-plated Mo, and etched. A Cu cooling block 3 has a bore the diameter D of which is slightly smaller than the diameter S of the support member 2, and the support member is introduced into the bore when a sufficient temperature difference between support member and block has been established by heating the block, or cooling the transistor and support member as by immersion in liquid air, or both. To increase the contact area between contact member and bore, both may be given star-shaped cross-sections.
GB2069357A 1956-07-04 1957-07-01 Improvements in or relating to semi-conductive devices Expired GB859005A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP16581A DE1035782B (en) 1956-07-04 1956-07-04 Method for fastening semiconductor arrangements on a carrier with good thermal conductivity

Publications (1)

Publication Number Publication Date
GB859005A true GB859005A (en) 1961-01-18

Family

ID=7366113

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2069357A Expired GB859005A (en) 1956-07-04 1957-07-01 Improvements in or relating to semi-conductive devices

Country Status (5)

Country Link
BE (1) BE558969A (en)
CH (1) CH353459A (en)
DE (1) DE1035782B (en)
FR (1) FR1182331A (en)
GB (1) GB859005A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010044011A1 (en) * 2008-10-14 2010-04-22 Koninklijke Philips Electronics N.V. A system for heat conduction between two connectable members

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1106878B (en) * 1958-08-08 1961-05-18 Siemens Ag Semiconductor device and method for its manufacture
DE1176451B (en) * 1958-09-10 1964-08-20 Siemens Ag Process for the production of a semiconductor component
DE1110322B (en) * 1958-11-26 1961-07-06 Siemens Ag Surface rectifier arrangement with a massive cooling element equipped with cooling vanes
DE1205626B (en) * 1959-01-28 1965-11-25 Bosch Gmbh Robert Semiconductor device
DE1151324B (en) * 1960-04-11 1963-07-11 Elektronik M B H Process for the production of semiconductor devices
DE1221532B (en) * 1960-07-08 1966-07-21 Licentia Gmbh Use of a gold-antimony solder to solder parts made of tungsten or Moylbdaen with parts made from the same different material
DE1242758B (en) * 1961-04-07 1967-06-22 Siemens Ag Semiconductor arrangement, especially for high performance, in which a thin, disk-shaped semiconductor body is attached to a carrier plate
NL129350C (en) * 1962-12-26
GB8522159D0 (en) * 1985-09-06 1985-10-09 Lucas Elect Electron Syst Connection of electrical component
DE102012207470B3 (en) * 2012-05-04 2013-10-10 Infineon Technologies Ag Method for manufacturing semiconductor module arrangement i.e. converter, involves cooling body such that recess is reduced and composite is developed between semiconductor module and body, where sides exhibit surface of preset size
DE102015115133B3 (en) * 2015-09-09 2016-11-03 Infineon Technologies Ag Method for connecting a heat sink with at least one circuit carrier by shrinking

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010044011A1 (en) * 2008-10-14 2010-04-22 Koninklijke Philips Electronics N.V. A system for heat conduction between two connectable members
US8536768B2 (en) 2008-10-14 2013-09-17 Koninklijke Philips N.V. System for heat conduction between two connectable members

Also Published As

Publication number Publication date
FR1182331A (en) 1959-06-24
DE1035782B (en) 1958-08-07
BE558969A (en)
CH353459A (en) 1961-04-15

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