DE102015115133B3 - Method for connecting a heat sink with at least one circuit carrier by shrinking - Google Patents
Method for connecting a heat sink with at least one circuit carrier by shrinking Download PDFInfo
- Publication number
- DE102015115133B3 DE102015115133B3 DE102015115133.2A DE102015115133A DE102015115133B3 DE 102015115133 B3 DE102015115133 B3 DE 102015115133B3 DE 102015115133 A DE102015115133 A DE 102015115133A DE 102015115133 B3 DE102015115133 B3 DE 102015115133B3
- Authority
- DE
- Germany
- Prior art keywords
- connecting body
- heat sink
- circuit carrier
- shrinking
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000009413 insulation Methods 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 36
- 238000001465 metallisation Methods 0.000 claims description 30
- 239000000969 carrier Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000011990 functional testing Methods 0.000 claims description 3
- 239000012782 phase change material Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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Abstract
Ein Aspekt der Erfindung betrifft ein Verfahren zum Verbinden eines Kühlkörpers (1) mit einem Schaltungsträger (25), der einen dielektrischen Isolationsträger (20) und einen Verbindungskörper (3) aufweist. Der Kühlkörper (1) wird auf den Verbindungskörper (3) aufgeschrumpft.One aspect of the invention relates to a method for connecting a heat sink (1) to a circuit carrier (25) which has a dielectric insulation support (20) and a connection body (3). The heat sink (1) is shrunk onto the connecting body (3).
Description
Die vorliegende Erfindung betrifft ein Verfahren zum Verbinden eines Kühlkörpers mit wenigstens einem Schaltungsträger. Derartige Verfahren werden beispielsweise bei der Herstellung von Leistungshalbleitermodulen eingesetzt. Der Kühlkörper wird dazu benötigt, um Abwärme von elektronischen Bauelementen, mit denen der Schaltungsträger bestückt ist, über den Schaltungsträger hin zum Kühlkörper abzuführen. Um eine ausreichende Kühlwirkung zu erzielen, ist ein guter thermischer Kontakt zwischen Schaltungsträger und Kühlkörper von Vorteil. Grundsätzlich können die vorbestückten Schaltungsträger durch Löt- oder Sinterverfahren mit dem Kühlkörper verbunden werden. Dabei kann es jedoch zu einem Verschwimmen der vorbestückten Schaltungsträger kommen. Um ein Verschwimmen zu verhindern, ist ein größerer Aufwand erforderlich. Außerdem muss der vorbestückte Schaltungsträger insbesondere bei den Sinterverfahren, aber auch bei manchen Lötverfahren wie z. B. beim Diffusionsloten mit hohem Druck gegen den Kühlkörper gepresst werden. Dabei besteht die Gefahr, dass der vorbestückte Schaltungsträger beschädigt wird. Diese Problematik kann zwar dadurch verhindert werden, dass zunächst die unbestückten Schaltungsträger durch ein Löt- oder Sinterverfahren mit dem Kühlkörper verbunden werden. Allerdings müssen dann die bereits mit dem Kühlkörper verbundenen Schaltungsträger noch bestückt werden. Sofern auch nur eine der auf jedem der Schaltungsträger realisierten Schaltungen fehlerhaft ist, muss der gesamte Verbund entsorgt oder – sofern möglich – aufwändig repariert werden (Kombinationsausschuss). Ein weiterer Nachteil besteht darin, dass ein bereits mit einem zu bestückenden Schaltungsträger verbundener Kühlkörper den Schaltungsträger während des Bestückungsvorgangs entwärmt, was beispielsweise bei der Herstellung von Lötverbindungen nachteilig ist.The present invention relates to a method for connecting a heat sink with at least one circuit carrier. Such methods are used, for example, in the production of power semiconductor modules. The heat sink is required to dissipate waste heat from electronic components, with which the circuit carrier is equipped, via the circuit carrier towards the heat sink. In order to achieve a sufficient cooling effect, good thermal contact between circuit carrier and heat sink is advantageous. In principle, the pre-assembled circuit carriers can be connected to the heat sink by soldering or sintering methods. However, this can lead to a blurring of the pre-equipped circuit carrier. To prevent blurring, a greater effort is required. In addition, the vorbestückte circuit substrate in particular in the sintering process, but also in some soldering such. B. are pressed against the heat sink at the diffusion solder with high pressure. There is a risk that the pre-equipped circuit carrier is damaged. Although this problem can be prevented by the fact that first the bare circuit carriers are connected by a soldering or sintering process with the heat sink. However, then already connected to the heat sink circuit carrier must be equipped. If only one of the circuits realized on each of the circuit boards is faulty, the entire composite must be disposed of or - if possible - repaired consuming (Combination Committee). A further disadvantage is that a heat sink which is already connected to a circuit carrier to be populated cools the circuit carrier during the assembly process, which is disadvantageous, for example, in the production of soldered connections.
Die
Aus der
In
Die Aufgabe der Erfindung besteht darin, ein Verfahren bereitzustellen, mit dem ein oder mehrere Schaltungsträger auf einfache Weise mit einem Kühlkörper verbunden werden können und bei dem im Fall von zwei oder mehr Schaltungsträgern ein Kombinationsausschuss vermieden wird.The object of the invention is to provide a method with which one or more circuit carriers can be connected in a simple manner to a heat sink and in which, in the case of two or more circuit carriers, a combination reject is avoided.
Diese Aufgabe wird durch ein Verfahren zum Verbinden eines Kühlkörpers mit wenigstens einem Schaltungsträger gemäß Anspruch 1 gelöst. Ausgestaltungen und Weiterbildungen der Erfindung sind Gegenstand von Unteransprüchen.This object is achieved by a method for connecting a heat sink with at least one circuit carrier according to
Ein Aspekt der Erfindung betrifft ein Verfahren zum Verbinden eines Kühlkörpers mit einem Schaltungsträger, der einen dielektrischen Isolationsträger und einen Verbindungskörper aufweist. Der Kühlkörper wird derart auf den Verbindungskörper des Schaltungsträgers aufgeschrumpft, dass der dielektrische Isolationsträger nach dem Aufschrumpfen vollständig außerhalb einer Aussparung angeordnet ist, in die der Verbindungskörper nach dem Aufschrumpfen hineinragt und an der der Verbindungskörper mit dem Kühlkörper verbunden ist.One aspect of the invention relates to a method for connecting a heat sink to a circuit carrier which has a dielectric insulation carrier and a connection body. The heat sink is shrunk onto the connecting body of the circuit carrier in such a way that, after shrinking, the dielectric insulating carrier is arranged completely outside a recess into which the connecting body protrudes after shrinking and at which the connecting body is connected to the heat sink.
Die Erfindung wird nachfolgend anhand von Ausführungsbeispielen unter Bezugnahme auf die beigefügten Figuren erläutert. Die Darstellung in den Figuren ist nicht maßstäblich. Es zeigen:The invention will be explained below with reference to embodiments with reference to the accompanying figures. The representation in the figures is not to scale. Show it:
Das Isoliersubstrat
Die Metallisierungsschichten
Der Isolationsträger
Gemäß einem Beispiel kann es sich bei dem Isoliersubstrat
Durch stoffschlüssiges Verbinden des Isoliersubstrats mit dem Verbindungskörper
In
Wie in
Wie nachfolgend anhand der
Bei einem solchen Halbleiterbauelement
Ein Halbleiterbauelement
Bei der oberen Chipmetallisierung
Sofern der Schaltungsträger
In
Weiterhin können ein oder mehrere Halbleiterbauelemente
In
Nach dem Bestücken kann die auf dem Schaltungsträger
Der Kühlkörper
Wenn der Kühlkörper
In diesem Zustand kann der Schaltungsträger
Nach einer gewissen Zeit ab dem Einsetzen gleichen sich die Temperaturen den Kühlkörpers
Dabei kann der lineare thermische Ausdehnungskoeffizient des Verbindungskörpers
Allgemein wird, um den Kühlkörper
Wie in
Wie nachfolgend anhand zweier weiterer Ausführungsbeispiele erläutert wird, kann eine Aussparung
Die Geometrie der Hinterschneidung
Bei dem Beispiel gemäß den
Optional kann der Verbindungskörper
Wie weiterhin anhand einer Modifikation des Beispiels gemäß den
Ein Wärmeübertragungsmedium
Bei dem Wärmeübertragungsmedium
Wie den vorangehenden Ausführungsbeispielen zu entnehmen ist, ragt der Verbindungskörper
Bei sämtlichen Ausgestaltungen der Erfindung kann der Verbindungskörper
Die
Ein Verbindungskörper
Alternativ oder zusätzlich kann die maximale Höhe h3 eines Verbindungskörpers
Insgesamt kann ein Verbindungskörper
Grundsätzlich kann die maximale Grundfläche eines Verbindungskörpers
Gemäß einer weiteren optionalen Ausgestaltung kann ein Verbindungskörper
Wie ebenfalls aus den vorangehenden
Gemäß einer weiteren, anhand von
Wie weiterhin in
Anhand der vorangehenden Ausführungsbeispiele wurde erläutert, wie ein vorbestückter Schaltungsträger
Um den Kühlkörper
Wie in
Bei allen Ausgestaltungen der Erfindung können die Materialien und die Geometrie des bestückten Schaltungsträgers
Da der Schaltungsträger
Zur Herstellung einer solchen Anordnung kann der Verbindungskörper
Claims (24)
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113140530A (en) * | 2020-01-20 | 2021-07-20 | 英飞凌科技奥地利有限公司 | Electronic module including semiconductor package connected to fluid heat sink |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1035782B (en) * | 1956-07-04 | 1958-08-07 | Philips Patentverwaltung | Method for fastening semiconductor arrangements on a carrier with good thermal conductivity |
WO2005038912A1 (en) * | 2002-10-11 | 2005-04-28 | Chien-Min Sung | Carbonaceous heat spreader and associated methods |
DE102012207470B3 (en) * | 2012-05-04 | 2013-10-10 | Infineon Technologies Ag | Method for manufacturing semiconductor module arrangement i.e. converter, involves cooling body such that recess is reduced and composite is developed between semiconductor module and body, where sides exhibit surface of preset size |
-
2015
- 2015-09-09 DE DE102015115133.2A patent/DE102015115133B3/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1035782B (en) * | 1956-07-04 | 1958-08-07 | Philips Patentverwaltung | Method for fastening semiconductor arrangements on a carrier with good thermal conductivity |
WO2005038912A1 (en) * | 2002-10-11 | 2005-04-28 | Chien-Min Sung | Carbonaceous heat spreader and associated methods |
DE102012207470B3 (en) * | 2012-05-04 | 2013-10-10 | Infineon Technologies Ag | Method for manufacturing semiconductor module arrangement i.e. converter, involves cooling body such that recess is reduced and composite is developed between semiconductor module and body, where sides exhibit surface of preset size |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113140530A (en) * | 2020-01-20 | 2021-07-20 | 英飞凌科技奥地利有限公司 | Electronic module including semiconductor package connected to fluid heat sink |
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