DE102014203306A1 - Manufacture of an electronic module - Google Patents

Manufacture of an electronic module Download PDF

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Publication number
DE102014203306A1
DE102014203306A1 DE102014203306.3A DE102014203306A DE102014203306A1 DE 102014203306 A1 DE102014203306 A1 DE 102014203306A1 DE 102014203306 A DE102014203306 A DE 102014203306A DE 102014203306 A1 DE102014203306 A1 DE 102014203306A1
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DE
Germany
Prior art keywords
leadframe
semiconductor chip
circuit board
contacting
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102014203306.3A
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German (de)
Inventor
Michael Leipenat
Ronny Werner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
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Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE102014203306.3A priority Critical patent/DE102014203306A1/en
Priority to CN201510067672.9A priority patent/CN104867863B/en
Publication of DE102014203306A1 publication Critical patent/DE102014203306A1/en
Pending legal-status Critical Current

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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract

Das Verfahren (S1–S8) dient zum Herstellen eines Elektronikmoduls (L), insbesondere Leistungselektronikmoduls, welches Verfahren ein Kontaktieren mindestens eines Halbleiterchips (3, 4) mit mindestens einem Leadframe (1) umfasst, wobei der Halbleiterchip (3, 4) an seiner Oberseite (7) und an seiner Unterseite (6) jeweils mindestens einen elektrischen Anschluss (8, 9) aufweist und der mindestens eine Leadframe (1) mindestens einen Anschluss (8, 9) einer der Seiten direkt kontaktiert (S5). Ein Elektronikmodul (L) ist mittels des Verfahrens (S1–S8) hergestellt worden. Die Erfindung ist insbesondere anwendbar auf Leistungselektronikmodule.The method (S1-S8) is used to produce an electronic module (L), in particular power electronics module, which method comprises contacting at least one semiconductor chip (3, 4) with at least one leadframe (1), wherein the semiconductor chip (3, 4) at its Upper side (7) and on its underside (6) each having at least one electrical connection (8, 9) and the at least one leadframe (1) at least one terminal (8, 9) of one of the sides directly contacted (S5). An electronic module (L) has been manufactured by the method (S1-S8). The invention is particularly applicable to power electronics modules.

Description

Die Erfindung betrifft ein Verfahren zum Herstellen eines Elektronikmoduls, insbesondere Leistungselektronikmoduls, welches ein Kontaktieren mindestens eines Halbleiterchips umfasst, wobei der Halbleiterchip an seiner Oberseite und an seiner Unterseite jeweils mindestens einen elektrischen Anschluss aufweist. Die Erfindung betrifft auch ein Elektronikmodul, welches mittels des Verfahrens hergestellt worden ist. Die Erfindung ist insbesondere anwendbar auf Leistungselektronikmodule, die mindestens einen Halbleiterchip in Form eines Leistungshalbleiterchips aufweisen. The invention relates to a method for producing an electronic module, in particular a power electronics module, which comprises contacting at least one semiconductor chip, the semiconductor chip each having at least one electrical connection on its upper side and on its underside. The invention also relates to an electronic module which has been produced by means of the method. The invention is particularly applicable to power electronics modules having at least one semiconductor chip in the form of a power semiconductor chip.

In Leistungs(elektronik)modulen werden elektrische Verbindungen zu jeweiligen Leistungshalbleiterchips häufig über deren Oberseite und Unterseite hergestellt. An der Oberseite wird typischerweise eine elektrische Verbindung hergestellt, um einen Stromfluss zu Anschlüssen des Moduls herzustellen. Bekannt zur Herstellung einer solchen elektrischen Verbindung sind Aluminium-Drähte (Dickdrähte oder Dünndrähte), welche einerseits auf die Oberseite und andererseits an äußere und/ oder innere Anschlussflächen des Moduls gebondet werden. Auch bekannt ist es, die elektrische Verbindung durch Kupfer-Drahtbonden (von Dickdrähten oder Dünndrähten), Bändchenbonden und Bonden mit Drähten aus Legierungen herzustellen. Noch weitere Verbindungslösungen bestehen aus gesinterten, metallisierten Kunststofffolien, z.B. gemäß der sog. „SKiN“-Technologie der Fa. Semikron. Charakteristisch für die SKiN-Technologie ist der Ersatz von Bonddrähten durch eine flexible, strukturierte Folie, die flächig auf die Leiterplatte mit den darauf befestigten Leistungselektronik-Bauelementen aufgesintert wird. Weiterhin sind gelötete Stromschienen aus dickem Kupfer bekannt. Darüber hinaus ist die sog. „SiPLIT“-Verbindungstechnologie der Fa. Siemens bekannt. In power (electronics) modules, electrical connections to respective power semiconductor chips are often made across their top and bottom. An electrical connection is typically made at the top to provide current flow to terminals of the module. Known for producing such an electrical connection are aluminum wires (thick wires or thin wires), which are bonded on the one hand to the top and on the other hand to outer and / or inner pads of the module. It is also known to make the electrical connection by copper wire bonding (of thick wires or thin wires), ribbon bonding and bonding with wires of alloys. Still other connection solutions consist of sintered, metallized plastic films, e.g. according to the so-called "SKiN" technology of the company Semikron. Characteristic of the SKiN technology is the replacement of bonding wires with a flexible, structured foil, which is sintered flat on the circuit board with the power electronics components mounted thereon. Furthermore, soldered busbars made of thick copper are known. In addition, the so-called "SiPLIT" connection technology from Siemens is known.

Bei den bekannten Verbindungstechnologien ist es nachteilig, dass die mit der Chipoberfläche verbundene obere Verdrahtungsebene bei einer Verwendung einer nicht-planaren Verbindungstechnik (z.B. mittels Drahtbondens) nur schwierig zu kühlen ist. Die Verwendung einer planaren Verbindungstechnologie wie der „SKiN“- oder der SiPLIT“-Verbindungstechnologie ist hingegen in der Herstellung vergleichsweise aufwändig und zudem teuer, insbesondere auch aufgrund von aufwändigen Fertigungsschritten wie einer Strukturierung oder Metallisierung. It is disadvantageous in the known connection technologies that the upper wiring plane connected to the chip surface is difficult to cool when using a non-planar connection technique (for example by wire bonding). The use of a planar connection technology such as the "SKiN" or the SiPLIT "connection technology, however, is comparatively complicated to manufacture and also expensive, in particular due to complex manufacturing steps such as structuring or metallization.

Es ist die Aufgabe der vorliegenden Erfindung, die Nachteile des Standes der Technik zumindest teilweise zu überwinden und insbesondere eine einfach und preiswert umsetzbare und effektiv kühlbare Verbindungstechnologie für ein Elektronikmodul mit mindestens einem elektronischen Bauelement, insbesondere Leistungselektronikbauelement, speziell Leistungshalbleiterchip, bereitzustellen. It is the object of the present invention to overcome the disadvantages of the prior art at least partially and in particular to provide a simple and inexpensive to implement and effectively coolable connection technology for an electronic module with at least one electronic component, in particular power electronics component, especially power semiconductor chip.

Diese Aufgabe wird gemäß den Merkmalen der unabhängigen Ansprüche gelöst. Bevorzugte Ausführungsformen sind insbesondere den abhängigen Ansprüchen entnehmbar. This object is achieved according to the features of the independent claims. Preferred embodiments are in particular the dependent claims.

Die Aufgabe wird gelöst durch ein Verfahren zum Herstellen eines Elektronikmoduls, welches Verfahren ein Kontaktieren mindestens eines Halbleiterchips mit mindestens einem Leadframe umfasst, wobei der Halbleiterchip an einer seiner Seiten (die im Folgenden ohne Beschränkung der Allgemeinheit als „Oberseite“ bezeichnet wird) und an einer dazu gegenüberliegenden Seite (die im Folgenden ohne Beschränkung der Allgemeinheit als „Unterseite“ bezeichnet wird) jeweils mindestens einen elektrischen Anschluss aufweist und der mindestens eine Leadframe mindestens einen Anschluss einer der Seiten, insbesondere der Oberseite, direkt kontaktiert. The object is achieved by a method for producing an electronic module, which method comprises contacting at least one semiconductor chip having at least one leadframe, wherein the semiconductor chip on one of its sides (which is hereinafter referred to without limitation of the generality as "top") and on a opposite side (which is hereinafter referred to without limitation of the generality as "bottom") each having at least one electrical connection and the at least one leadframe at least one terminal of one of the sides, in particular the top contacted directly.

Dieses Verfahren weist den Vorteil auf, dass sich eine im Vergleich zu bekannten planaren Verbindungstechnologien einfach und preiswert herstellbare und im Gegensatz zu nicht-planaren Verbindungstechnologien besonders robuste, zuverlässige und effektiv kühlbare Möglichkeit einer Verdrahtung bzw. elektrischen Verbindung bereitstellen lässt. Der Leadframe kann insbesondere sämtliche Bonds bei herkömmlichen nicht-planaren Leistungsmodulen, sowie z.B. den komplexen Herstellungsprozess bei SiPLIT, ersetzen. This method has the advantage that, in comparison with known planar connection technologies, a particularly robust, reliable and effectively coolable possibility of wiring or electrical connection can be produced in a simple and inexpensive manner and in contrast to non-planar connection technologies. In particular, the leadframe may include all bonds in conventional non-planar power modules, as well as e.g. replace the complex manufacturing process at SiPLIT.

Mindestens ein Halbleiterchip mag ein Leistungshalbleiterchip sein. Das Elektronikmodul mag dann auch als ein Leistungselektronikmodul bezeichnet werden. Es ist eine Weiterbildung, dass mindestens ein Halbleiterchip ein Leistungsschalter ist. Es ist noch eine Weiterbildung, dass mindestens ein Halbleiterchip ein IGBT, ein Leistungs-MOSFET, eine Leistungsdiode, ein Thyristor, ein Triac usw. ist. At least one semiconductor chip may be a power semiconductor chip. The electronic module may then also be referred to as a power electronics module. It is a development that at least one semiconductor chip is a circuit breaker. It is a further development that at least one semiconductor chip is an IGBT, a power MOSFET, a power diode, a thyristor, a triac, etc.

Zusätzlich zu dem mindestens einen Halbleiterchip mag noch mindestens ein weiteres Bauelement des Moduls mit dem Leadframe in analoger Weise verbunden werden, z.B. mindestens ein gehaustes elektronisches Bauelement, ein elektrisch leitfähiger Abstandshalter, ein Widerstand, eine Spule, ein Kondensator usw. In addition to the at least one semiconductor chip, at least one further component of the module may also be connected to the leadframe in an analogous manner, e.g. at least one housed electronic component, an electrically conductive spacer, a resistor, a coil, a capacitor, etc.

Der Leadframe kann beispielsweise aus Kupfer oder aus einer Kupferlegierung bestehen. Der Leadframe mag allgemein eine eigenständig hergestellte und handhabbare Leitungsstruktur sein. For example, the leadframe may be made of copper or a copper alloy. The leadframe may generally be a self-fabricated and manageable line structure.

Dass der Halbleiterchip an seiner Oberseite und seiner Unterseite jeweils mindestens einen elektrischen Anschluss aufweist, mag insbesondere umfassen, dass er nur an seiner Oberseite und seiner Unterseite jeweils mindestens einen elektrischen Anschluss aufweist, also z.B. keine seitlich herausgeführten Anschlusspins oder Anschlussbeinchen aufweist. That the semiconductor chip on its top and its Each underside each has at least one electrical connection, may include in particular that it has only at its top and its bottom in each case at least one electrical connection, that is, for example, has no laterally led out terminal pins or leads.

Es ist eine Weiterbildung, dass die elektrischen Anschlüsse des Halbleiterchips flächige Anschlüsse oder Anschlussbereiche sind, z.B. Kontaktfelder oder Kontaktpads, so dass sie besonders einfach kontaktierbar sind. Unter einem flächigen Anschluss oder Anschlussbereich mag insbesondere kein Vorsprung verstanden werden, welcher in eine entsprechende Aussparung einzusetzen ist, also z.B. kein Anschlussstift. Die flächigen Anschlussbereiche mögen folglich insbesondere eine ebene Kontaktfläche aufweisen oder bilden, sind aber nicht darauf beschränkt. Die flächigen Anschlussbereiche mögen auch unter einer Isolation integriert sein. It is a development that the electrical connections of the semiconductor chip are surface connections or connection regions, e.g. Contact fields or contact pads, so that they are particularly easy to contact. A flat connection or connection region may in particular not be understood to mean a projection which is to be inserted into a corresponding recess, thus e.g. no pin. The areal connection areas may therefore in particular have or form a planar contact area, but are not limited thereto. The flat connection areas may also be integrated under an insulation.

Unter einer "direkten" Kontaktierung wird insbesondere eine Kontaktierung verstanden, bei welcher der Leadframe und ein Anschluss des Halbleiterchips ohne weitere Verbindungselemente miteinander verbunden sind, also z.B. ohne eine Verwendung von Bonddrähten o.ä. Jedoch mag eine Verwendung eines Haftvermittlers wie einer Kontaktpaste, eines Lots oder einer Sinterschicht bei einer direkten Kontaktierung möglich sein. Der Haftvermittler mag insbesondere als Verbindungsschicht vorliegen. A "direct" contacting means in particular a contacting in which the leadframe and a connection of the semiconductor chip are connected to one another without further connecting elements, thus e.g. without the use of bonding wires or similar However, it may be possible to use a coupling agent such as a contact paste, a solder or a sintered layer in a direct contact. The adhesion promoter may be present in particular as a bonding layer.

Es ist eine Ausgestaltung, dass das Verfahren mindestens die folgenden Schritte umfasst: (i) Bereitstellen des (mindestens einen) Leadframes; (ii) Kontaktieren des (mindestens einen) Leadframes mit der beispielhaft herausgegriffenen Oberseite mindestens eines Halbleiterchips; und (iii) Kontaktieren der Unterseite dieses mindestens einen Bauelements sowie ggf. des Leadframes mit einer gemeinsamen Leiterplatte. It is an embodiment that the method comprises at least the following steps: (i) providing the (at least one) leadframe; (ii) contacting the (at least one) leadframe with the exemplified top of at least one semiconductor chip; and (iii) contacting the underside of said at least one device and possibly the leadframe with a common circuit board.

Der Schritt (ii) umfasst insbesondere ein Kontaktieren mindestens eines Anschlussbereichs an der Oberseite des Halbleiterchips. Für den Fall, dass an der Oberseite mehrere elektrisch voneinander getrennte Anschlussbereiche vorhanden sind, mag der Leadframe einen oder mehrere dieser Anschlussbereiche, insbesondere auch alle Anschlussbereiche, kontaktieren. In particular, step (ii) comprises contacting at least one connection region on the upper side of the semiconductor chip. In the event that a plurality of electrically separate terminal areas are present at the top, the leadframe may contact one or more of these terminal areas, in particular also all terminal areas.

Die gemeinsame Leiterplatte aus Schritt (iii) kann ein insbesondere plattenförmiges Substrat aufweisen, das an seiner Ober- oder Vorderseite mindestens eine strukturierte elektrisch leitfähige Lage zur Kontaktierung zumindest einer Unterseite des mindestens einen Halbleiterchips aufweist. Die strukturierte Lage mag auch als Leiterstruktur oder untere Verdrahtungslage bezeichnet werden und z.B. mindestens eine Leiterbahn aufweisen. Die strukturierte Lage mag ferner mit mindestens einem weiteren Bauelement und/oder (z.B. über einen Abstandshalter) mit dem Leadframe verbunden werden. Insbesondere mag eine Kontaktierung der Leiterplatte eine Kontaktierung der strukturierten Lage umfassen. The common circuit board from step (iii) may have a particular plate-shaped substrate which has at least one structured electrically conductive layer for contacting at least one underside of the at least one semiconductor chip on its top or front side. The structured layer may also be referred to as a conductor pattern or a lower wiring layer, and e.g. have at least one conductor track. The patterned layer may also be connected to at least one other device and / or (e.g., via a spacer) to the leadframe. In particular, a contacting of the printed circuit board may include a contacting of the structured layer.

Die gemeinsame Leiterplatte kann auch als „Substrat“ bezeichnet werden, während der elektrisch isolierende Träger dann auch als „Isolierschicht“ bezeichnet werden kann. Die gemeinsame Leiterplatte kann eine DCB- oder eine IMS-Leiterplatte sein. Eine solche ist für einen Betrieb mit Leistungselektronik-Bauelementen besonders geeignet, z.B. auch aufgrund ihrer effektiven Kühlbarkeit. Die gemeinsame Leiterplatte mag aber auch eine DAB („Direct Aluminium Bonded“)-, eine AMB („Active Metal Brazing“)- oder z.B. auch eine herkömmliche FR4-Leiterplatte sein. The common printed circuit board can also be referred to as a "substrate", while the electrically insulating substrate can then also be referred to as an "insulating layer". The common circuit board may be a DCB or IMS circuit board. Such is particularly suitable for operation with power electronics devices, e.g. also because of their effective coolability. However, the common circuit board may also have a DAB ("Direct Aluminum Bonded") -, an AMB ("Active Metal Brazing") - or e.g. also be a conventional FR4 board.

In Schritt (iii) kann also ein Leadframe mit dem daran angebrachten mindestens einen elektronischen Bauelement als eine gemeinsam handhabbare Einheit mit der Leiterplatte verbunden werden. Dazu mag die Leiterplatte auf den mit dem mindestens einen elektronischen Bauelement bestückten Leadframe aufgebracht werden und/oder es mag der bestückte Leadframe auf die Leiterplatte aufgesetzt werden. In step (iii), therefore, a leadframe with the at least one electronic component attached thereto can be connected to the printed circuit board as a jointly manageable unit. For this purpose, the printed circuit board may be applied to the leadframe populated with the at least one electronic component and / or the populated leadframe may be placed on the printed circuit board.

Der Vorteil dieser Ausgestaltung ist, dass die Oberseite des mindestens einen Halbleiterchips mit einer besonders hohen Präzision kontaktierbar ist. Dies ist insbesondere vorteilhaft, falls sich an der Oberseite mehrere Kontaktbereiche und/oder vergleichsweise kleine Kontaktbereiche befinden. Die Unterseite mag dann mit einer höheren Positionierungstoleranz kontaktiert werden, insbesondere falls sich dort nur ein Kontaktbereich befindet. Diese Ausgestaltung ist beispielsweise anwendbar auf IGBT-Chips, welche an ihrer Unterseite einen Kollektoranschluss, an ihrer Oberseite einen Emitteranschluss und zusätzlich an ihrer Oberseite einen Steueranschluss, insbesondere Gateanschluss, aufweisen. The advantage of this embodiment is that the upper side of the at least one semiconductor chip can be contacted with a particularly high precision. This is particularly advantageous if there are several contact areas and / or comparatively small contact areas at the top. The bottom may then be contacted with a higher positioning tolerance, especially if there is only one contact area. This refinement is applicable, for example, to IGBT chips which have a collector terminal on their underside, an emitter terminal on their top side and, in addition, a control terminal, in particular gate terminal, on their upper side.

Der Steueranschluss mag beispielsweise mittig oder zentral an der Oberseite angeordnet sein, insbesondere in Form eines „Zentralgates“. Er mag alternativ randseitig („Randgate“) oder an einer Ecke der Oberseite („Eckgate“) angeordnet sein. The control connection may, for example, be arranged centrally or centrally on the upper side, in particular in the form of a "central gate". It may alternatively be arranged at the edge ("edge gate") or at a corner of the top ("corner gate").

Jedoch ist grundsätzlich auch eine andere Reihenfolge der Zusammensetzung des Elektronikmoduls möglich, z.B. eine Bestückung der Leiterplatte mit dem mindestens einen elektronischen Bauelement und folgend eine Aufbringung des mindestens einen Leadframes auf die bestückte Leiterplatte. However, in principle, a different order of the composition of the electronic module is possible, e.g. an assembly of the printed circuit board with the at least one electronic component and following an application of the at least one lead frame on the assembled printed circuit board.

Es ist eine weitere Ausgestaltung, dass Schritt (ii) mindestens die folgenden Schritte umfasst: (iia) Belegen vorgesehener Kontaktbereiche des Leadframes mit einem jeweiligen Haftvermittler; und (iib) Anbringen mindestens eines Anschlusses mindestens eines elektronischen Bauelements an einem jeweiligen Kontaktbereich. Beispielsweise mag eine Oberseite eines elektronischen Bauelements mehrere Anschlussbereiche aufweisen, welche von jeweils einem Kontaktbereich mindestens eines Leadframes kontaktiert werden. Diese Ausgestaltung ermöglicht eine besonders einfache Montage. It is a further embodiment that step (ii) comprises at least the following steps: (iia) occupying intended contact areas of the leadframe with a respective adhesion promoter; and (iib) affixing at least one Connection of at least one electronic component to a respective contact area. For example, a top side of an electronic component may have a plurality of connection regions, which are each contacted by a contact region of at least one leadframe. This embodiment allows a particularly simple installation.

Es ist eine weitere Ausgestaltung, dass in Schritt (ii) bzw. (iib) eine Flip-Chip-Montagetechnik verwendet wird. Dies ermöglicht eine einfache, zuverlässige und präzise Bestückung des Leadframes mit dem mindestens einen elektronischen Bauelement. It is a further embodiment that in step (ii) or (iib) a flip-chip mounting technique is used. This allows a simple, reliable and precise assembly of the leadframe with the at least one electronic component.

Es ist auch eine Ausgestaltung, dass Schritt (iii) ein Kontaktieren über einen Haftvermittler umfasst, insbesondere über den gleichen Haftvermittler wie in Schritt (iia). Dies ermöglicht eine einheitlichere und damit einfachere Herstellung. Beispielsweise mag der Haftvermittler auf die Leiterplatte aufgebracht werden. It is also an embodiment that step (iii) comprises contacting via an adhesion promoter, in particular via the same adhesion promoter as in step (iia). This allows a more uniform and thus easier production. For example, the adhesion promoter may be applied to the printed circuit board.

Der Haftvermittler mag beispielsweise aufgedruckt werden, z.B. mittels eines Schablonendruckverfahrens. For example, the primer may be printed, e.g. by means of a stencil printing process.

Es ist ferner eine Ausgestaltung, dass der Haftvermittler ein Sintermaterial bzw. sinterfähiges Material ist. Jedoch können grundsätzlich auch andere Materialien verwendet werden, wie eine Lotpaste, ein elektrisch leitfähiger Kleber usw. It is also an embodiment that the adhesion promoter is a sintered material or sinterable material. However, in principle, other materials may be used, such as a solder paste, an electrically conductive adhesive, etc.

Es ist noch eine für eine einfache Herstellung bevorzugte Ausgestaltung, dass dann, wenn der Haftvermittler ein Sintermaterial ist, sich an Schritt (iii) ein gemeinsamer Sinterablauf in einem Schritt (iv) anschließt. In einem Ablauf können also sowohl die Kontaktierung(en) zwischen dem mindestens einen elektronischen Bauelement und dem Leadframe, die Kontaktierung(en) zwischen dem mindestens einen elektronischen Bauelement und der Leiterplatte sowie – falls vorhanden – die Kontaktierung(en) zwischen der Leiterplatte und dem Leadframe (ggf. über ein Zwischenelement wie einen elektrisch leitfähigen Abstandshalter) finalisiert werden. It is still a preferred embodiment for a simple production, that when the bonding agent is a sintered material, step (iii) is followed by a common sintering process in a step (iv). In one sequence, therefore, both the contacting (s) between the at least one electronic component and the leadframe, the contacting (s) between the at least one electronic component and the circuit board and - if present - the contact (s) between the circuit board and the Leadframe (possibly via an intermediate element such as an electrically conductive spacer) to be finalized.

Es wird für einen besonders einfach umsetzbaren Sinterablauf bevorzugt, dass dieser ein Sinterpressablauf ist oder einen solchen aufweist. Dabei wird das Sintern des Sintermaterials durch Aufbringen eines ausreichend hohen Drucks erreicht. Es kann so auf hohe Temperaturen verzichtet werden, was eine thermische Schädigung des mindestens einen elektronischen Bauelements vermeidet. Bei dem Sinterpressablauf mag die verbundene Einheit aus Leiterplatte, elektronischem/n Bauelement(en) und Leadframe(s) in eine passsende Druckform eingebracht werden. Dabei kann zum Nivellieren von Kraftunterschieden und von geringen Höhenunterschieden auf der Leiterplatte ein Druckausgleichsmaterial mit in die Druckform gegeben worden sein. Jedoch ist der Sinterablauf nicht darauf beschränkt und mag z.B. auch als ein druckloses Sintern oder als ein anderes druckbehaftetes Sintern ausgebildet sein. It is preferred for a particularly simple sintering process that this is a sintered press process or has such. In this case, the sintering of the sintered material is achieved by applying a sufficiently high pressure. It can be dispensed with high temperatures, which avoids thermal damage to the at least one electronic component. In the Sinterpressablaufablauf the associated unit of printed circuit board, electronic / n component (s) and leadframe (s) may be introduced into a suitable printing form. In this case, a pressure compensation material may be added to the printing for leveling differences in strength and low height differences on the circuit board. However, the sintering procedure is not limited to this and may be e.g. also be designed as a pressureless sintering or as another pressurized sintering.

Beispielsweise mag als Sintermaterial Silberpaste verwendet werden, die zur Haftvermittlung z.B. als Silber-Sinterschicht vorliegt. Sie ist insbesondere zum Sintern während eines Sinterpressablaufs geeignet. Alternativ oder zusätzlich zu der Silberpaste können vorgeformte Silberpads (beispielsweise sog. "Preforms") verwendet werden. For example, silver paste may be used as the sintering material, which may be used for bonding e.g. is present as a silver sintered layer. It is particularly suitable for sintering during a Sinterpressablaufablaufs. Alternatively or in addition to the silver paste, preformed silver pads (for example so-called "preforms") can be used.

Anstelle des Sinterns mag der Haftvermittler auch einfach getrocknet oder ausgehärtet werden und/oder zunächst unter erhöhter Temperatur verflüssigt und dann wieder verfestigt werden. Ein solcher Haftvermittler mag z.B. ein Lotmaterial oder ein Wärmeleitkleber sein. Instead of sintering, the primer may also simply be dried or cured and / or first liquefied under elevated temperature and then solidified again. Such a coupling agent may e.g. a solder material or a thermal adhesive.

Es ist ferner eine Ausgestaltung, dass zwischen den Schritten (i) und (ii) ein Schritt eines Belegens mindestens eines Abschnitts des Leadframes außerhalb der Kontaktbereiche mit einem elektrisch isolierenden Material durchgeführt wird. Dadurch kann eine unbeabsichtigte Kontaktierung des Leadframes mit elektrisch leitfähigen Flächen vermieden werden. Zudem können so Luftstrecken verlängert oder sogar vermieden werden. Der Schritt des Belegens mit dem elektrisch isolierenden Material kann auch einen Teilschritt von Schritt (i) und/oder von Schritt (ii) darstellen. It is furthermore an embodiment that between steps (i) and (ii) a step of covering at least a portion of the leadframe outside the contact regions with an electrically insulating material is performed. As a result, unintentional contacting of the leadframe with electrically conductive surfaces can be avoided. In addition, so air gaps can be extended or even avoided. The step of coating with the electrically insulating material may also constitute a substep of step (i) and / or step (ii).

Das elektrisch isolierende Material kann z.B. als Vergussmasse, Tinte, sprühfähiges Material, Folie oder Film aufgebracht worden sein oder vorliegen. The electrically insulating material may be e.g. be applied or present as potting compound, ink, sprayable material, film or film.

Es ist eine Weiterbildung davon, dass ein Leadframe folgend auf bzw. angrenzend an einen Kontaktbereich mit dem elektrisch isolierenden Material belegt wird. Dies ist beispielsweise nützlich, wenn mittels dieses Kontaktbereichs ein zentraler Anschlussbereich z.B. an der Oberseite eines elektronischen Bauelements kontaktiert werden soll. Durch das elektrisch isolierende Material kann dann verhindert werden, dass der sich an den Kontaktbereich anschließende Abschnitt einen weiteren, den zentraler Anschlussbereich umgebenden Anschlussbereich (z.B. einen Emitterbereich) berühren kann. Es ist somit außerdem eine Ausgestaltung, dass zumindest ein Abschnitt des Leadframes mit dem elektrisch isolierenden Material belegt wird, welcher oberhalb eines elektronischen Bauelements zu positionieren ist. It is a further development that a leadframe is placed next to or adjacent to a contact region with the electrically insulating material. This is useful, for example, if by means of this contact region a central connection region, e.g. to be contacted at the top of an electronic component. The electrically insulating material can then prevent the section adjacent to the contact region from touching another connecting region (for example an emitter region) surrounding the central connecting region. It is thus also an embodiment that at least a portion of the leadframe is covered with the electrically insulating material, which is to be positioned above an electronic component.

Das elektrisch isolierende Material mag an Luft aushärten. Es mag unter Umgebungstemperatur oder unter erhöhter Temperatur ausgehärtet werden, z.B. in einem Ofen. Das Aushärten unter nicht erhöhter Temperatur vermeidet z.B. einen Ofenprozess, die Aushärtung unter erhöhter Temperatur ermöglicht eine besonders schnelle Aushärtung. Das Aushärten mag ferner mit Hilfe von UV-Strahlung u.v.m. durchgeführt werden. Der Leadframe mag mit vollständig ausgehärtetem, mit teilausgehärtetem oder mit praktisch noch nicht ausgehärtetem elektrisch isolierendem Material mit dem mindestens einen elektronischen Bauelement verbunden werden. The electrically insulating material may cure in air. It may be cured under ambient or elevated temperature, eg in an oven. Curing under not increased temperature avoids, for example, a furnace process, the curing at elevated temperature allows a particularly rapid curing. The curing may also be carried out with the help of UV radiation uvm. The leadframe may be connected to the at least one electronic component with fully cured, partially cured or practically uncured electrically insulating material.

Es ist zusätzlich oder alternativ möglich, das elektrisch isolierende Material an den gewünschten Stellen auf das mindestens eine elektronische Bauelement und/oder auf die Leiterplatte aufzugeben. It is additionally or alternatively possible to give up the electrically insulating material at the desired locations on the at least one electronic component and / or on the printed circuit board.

Der Leadframe kann durch das Beschichten oder Belegen seiner Kontaktbereiche mit einem Haftvermittler und/oder durch das Aufbringen des elektrisch isolierenden Materials für Schritt (ii) vorbereitet werden. The leadframe may be prepared by coating or covering its contact areas with an adhesion promoter and / or by applying the electrically insulating material for step (ii).

Es ist darüber hinaus eine Ausgestaltung, dass sich Schritt (iii) oder Schritt (iv) ein Schritt (v) eines Auftrennens des Leadframes anschließt. So kann der Leadframe in zwei oder noch mehr Leiterbahnen vereinzelt werden. Das Auftrennen mag z.B. mittels Laserschneidens durchgeführt werden. Der Leadframe kann auch als Gruppe von Leiterbahnen verstanden werden, welche durch – insbesondere dünne – Hilfsstege miteinander verbunden sind. Beim Auftrennen des Leadframes wird zumindest einer der Hilfsstege durchtrennt. It is furthermore an embodiment that step (iii) or step (iv) is followed by a step (v) of disconnecting the leadframe. Thus, the leadframe can be separated into two or even more tracks. The separation may be e.g. be carried out by laser cutting. The leadframe can also be understood as a group of conductor tracks, which are connected to each other by - in particular thin - auxiliary webs. When separating the leadframe at least one of the auxiliary webs is severed.

Die Aufgabe wird auch gelöst durch ein Elektronikmodul, welches mittels eines Verfahrens wie oben beschrieben hergestellt worden ist. Ein solches Elektronikmodul kann analog zu dem Verfahren ausgebildet sein und die gleichen Vorteile aufweisen. The object is also achieved by an electronic module, which has been produced by means of a method as described above. Such an electronic module can be designed analogously to the method and have the same advantages.

Die oben beschriebenen Eigenschaften, Merkmale und Vorteile dieser Erfindung sowie die Art und Weise, wie diese erreicht werden, werden klarer und deutlicher verständlich im Zusammenhang mit der folgenden schematischen Beschreibung eines Ausführungsbeispiels, das im Zusammenhang mit den Zeichnungen näher erläutert wird. Dabei können zur Übersichtlichkeit gleiche oder gleichwirkende Elemente mit gleichen Bezugszeichen versehen sein. The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following schematic description of an embodiment which will be described in detail in conjunction with the drawings. In this case, the same or equivalent elements may be provided with the same reference numerals for clarity.

1 zeigt ein Ausführungsbeispiel des erfindungsgemäßen Verfahrens anhand eines Ablaufdiagramms; 1 shows an embodiment of the method according to the invention with reference to a flowchart;

2 zeigt in Draufsicht ein mittels eines erfindungsgemäßen Verfahrens hergestelltes Elektronikmodul; 2 shows in plan view an electronic module produced by means of a method according to the invention;

3 zeigt das Elektronikmodul aus 2 als Schnittdarstellung in Seitenansicht durch eine erste in 2 eingezeichnete Schnittebene; und 3 shows the electronics module 2 as a sectional view in side view through a first in 2 drawn section plane; and

4 zeigt das Elektronikmodul aus 2 als Schnittdarstellung in Seitenansicht durch eine erste in 2 eingezeichnete Schnittebene. 4 shows the electronics module 2 as a sectional view in side view through a first in 2 drawn section plane.

1 zeigt ein mögliches Ablaufdiagramm zur Durchführung des erfindungsgemäßen Verfahrens zur Herstellung des in den 2 bis 4 dargestellten Leistungselektronikmoduls L. 1 shows a possible flow chart for carrying out the method according to the invention for the preparation of the in the 2 to 4 illustrated power electronics module L.

In einem ersten Schritt S1 wird ein Leadframe 1 bereitgestellt, welcher eine obere Verdrahtungsebene eines Leistungselektronikmoduls L (siehe 2) bilden soll. Der Leadframe 1 ist hier eine zusammenhängende, lagenartige Struktur aus mehreren Leiterbahnen 2 bzw. 2a bis 2d, die zunächst durch dünne Hilfsstege (o. Abb.) miteinander verbunden sind. Der Leadframe 1 besteht aus Kupfer oder einer Legierung davon und kann selbsttragend gehandhabt werden. Der Leadframe 1 kann beispielsweise aus einem Kupferblech herausgearbeitet worden sein. In a first step S1 becomes a leadframe 1 which has an upper wiring level of a power electronic module L (see FIG 2 ) should form. The leadframe 1 Here is a coherent, layer-like structure of several tracks 2 respectively. 2a to 2d , which are initially connected by thin auxiliary webs (not shown). The leadframe 1 consists of copper or an alloy thereof and can be handled self-supporting. The leadframe 1 may for example have been worked out of a copper sheet.

In einem zweiten Schritt S2 werden mehrere elektronische Bauelemente 3, 4 bereitgestellt, nämlich hier als Leistungshalbleiterchips in Form von IGBT-Chips 3 und weitere elektronische Bauelemente 4 wie Leistungsdioden. Die weiteren elektronischen Bauelemente 4 können gehaust sein und/oder als Chips bzw. Nacktchips vorliegen. In a second step S2, a plurality of electronic components 3 . 4 provided, namely here as power semiconductor chips in the form of IGBT chips 3 and other electronic components 4 like power diodes. The other electronic components 4 may be housed and / or present as chips or nude chips.

Die elektronischen Bauelemente 3, 4 weisen jeweils Anschlussbereiche an ihrer Unterseite und an ihrer Oberseite auf. Insbesondere die IGBT-Chips 3 weisen an ihrer Unterseite 6 einen Anschlussbereich (o. Abb.) für einen Kollektor („Kollektorabschluss“) auf und an ihrer Oberseite 7 zwei Anschlussbereiche 8 und 9 auf, nämlich einen zentralen ersten Anschlussbereich für ein Gate des jeweiligen IGBT-Chips ("Zentralgate" 8) sowie einen davon elektrisch getrennten, das Zentralgate 8 umgebenden zweiten Anschlussbereich 9 für einen Emitter („Emitteranschluss“) des jeweiligen IGBTs 3. Außer einem Zentralgate 8 könnte aber z.B. auch ein Randgate oder ein Eckgate vorliegen. Die zur Darstellung von 3 verwendete Schnittebene III-III aus 2 verläuft durch Zentralgates 8. Die zur Darstellung von 4 verwendete Schnittebene IV-IV aus 2 steht zu der Schnittebene III-III senkrecht und verläuft versetzt zu den Zentralgates 8. The electronic components 3 . 4 have each connection areas on its underside and on its top. In particular, the IGBT chips 3 show at their bottom 6 a connection area (not shown) for a collector ("collector termination") on and at its top 7 two connection areas 8th and 9 on, namely a central first terminal region for a gate of the respective IGBT chip ("Zentralgate") 8th ) and one of them electrically isolated, the central gate 8th surrounding second connection area 9 for an emitter ("emitter terminal") of the respective IGBTs 3 , Except for a central gate 8th But it could also be a border gate or a corner gate, for example. The for the representation of 3 used section plane III-III 2 passes through central gates 8th , The for the representation of 4 used section plane IV-IV 2 is perpendicular to the section plane III-III and extends offset to the central gates 8th ,

Es können auch noch andere Bauelemente bereitgestellt werden, z.B. Spulen, Widerstände, elektrisch leitfähige Abstandshalter usw. Im Folgenden wird beispielhaft auch noch eine Kontaktierung elektrisch leitfähiger Abstandshalter 10 beschrieben, z.B. von quaderförmigen Kupferblöcken. Other components may also be provided, for example coils, resistors, electrically conductive spacers, etc. In the following, a contacting of electrically conductive spacers will also be described by way of example 10 described, for example of cuboid copper blocks.

In einem dritten Schritt S3a werden Kontaktbereiche des Leadframes 1 mit einem Haftvermittler in Form z.B. einer Silber-Sinterpaste (o. Abb.) belegt. Alternativ oder zusätzlich zu Schritt S3a können die oberseitigen Anschlussbereiche 8, 9 der elektronischen Bauelemente 3, 4 und die Abstandshalter 10 in einem Schritt S3b mit dem Haftvermittler belegt werden. In a third step S3a, contact areas of the leadframe become 1 with a bonding agent in the form of eg a silver-sintered paste (not shown). Alternatively or in addition to step S3a, the upper-side connection areas 8th . 9 the electronic components 3 . 4 and the spacers 10 be occupied in a step S3b with the bonding agent.

In einem vierten Schritt S4 werden Abschnitte des Leadframes 1 außerhalb der Kontaktbereiche mit einem elektrisch isolierenden Material (o. Abb.), z.B. einer Vergussmasse, belegt. Diese Abschnitte mögen insbesondere Abschnitte sein, welche im fertigen Zustand des Leistungselektronikmoduls L über einer Oberseite 7 mindestens eines elektronischen Bauelements 3, 4 verlaufen. In a fourth step S4, sections of the leadframe 1 Outside the contact areas with an electrically insulating material (not shown), eg a potting compound occupied. In particular, these sections may be sections which, in the finished state of the power electronics module L, are above an upper side 7 at least one electronic component 3 . 4 run.

In einem fünften Schritt S5 werden die Kontaktbereiche des Leadframes 1 mit den oberseitigen Anschlussbereichen 7, 8 der elektronischen Bauelemente 3, 4 und mit den Abstandshaltern 10 verbunden bzw. kontaktiert, z.B. durch Aneinanderdrücken. Schritt S5 kann insbesondere mittels einer Nutzung der Flip-Chip-Technologie durchgeführt werden. Nach Durchführen von Schritt S5 hängen die elektronischen Bauelemente 3, 4 und die Abstandshalter 10 mit dem Leadframe 1 zusammen. In a fifth step S5, the contact areas of the leadframe become 1 with the top-side connection areas 7 . 8th the electronic components 3 . 4 and with the spacers 10 connected or contacted, for example by pressing together. Step S5 can be carried out in particular by means of a use of the flip-chip technology. After performing step S5, the electronic components hang 3 . 4 and the spacers 10 with the leadframe 1 together.

Der Leadframe 1 ist hier mit jedem IGBT-Chip 3 zweifach verbunden, nämlich über einen Kontaktbereich mit dem Zentralgate 8 und über mindestens einen anderen Kontaktbereich mit dem Emitter-Anschlussbereich 9. Der Abschnitt des Leadframes 1, welcher an den Kontaktbereich mit dem Zentralgate 8 anschließt, ist zumindest an seiner dem IGBT 3 zugewandten Unterseite oberhalb des Emitter-Anschlussbereichs 9 mit dem elektrisch isolierenden Material belegt, um eine elektrische Verbindung damit zu verhindern. The leadframe 1 is here with every IGBT chip 3 connected in duplicate, namely via a contact area with the central gate 8th and at least one other contact area with the emitter terminal area 9 , The section of the leadframe 1 , which at the contact area with the central gate 8th is at least at its the IGBT 3 facing underside above the emitter terminal area 9 covered with the electrically insulating material to prevent electrical connection therewith.

Die Kontaktierung der elektronischen Bauelemente 3, 4 zuerst mit dem Leadframe 1 ergibt unter anderem den Vorteil, dass das vergleichsweise kleinflächige Zentralgate 8 mit dem zugehörigen Kontaktbereich des Leadframes 1 mit hoher Präzision kontaktiert werden kann, und zwar mit einer weit höheren Präzision als wenn die elektronischen Bauelemente 3, 4 erst mit einer Leiterplatte und dann mit dem Leadframe 1 verbunden worden wären. The contacting of the electronic components 3 . 4 first with the leadframe 1 gives, inter alia, the advantage that the comparatively small area central gate 8th with the associated contact area of the leadframe 1 can be contacted with high precision, and with a much higher precision than when the electronic components 3 . 4 first with a circuit board and then with the leadframe 1 would have been connected.

In einem folgenden Schritt S6 werden die Unterseiten 6 der elektronischen Bauelemente 3, 4 sowie die Abstandshalter 10 mit einer gemeinsamen Leiterplatte 11 kontaktiert. Die gemeinsame Leiterplatte 11 ist eine DCB-Leiterplatte mit einem plattenförmigen Keramiksubstrat 12, einer vorderseitigen, strukturierten Lage 13 aus Kupfer sowie einer rückwärtigen Lage 14 aus Kupfer. Die vorderseitige Lage 13 bildet eine unterseitige Verdrahtungslage für die elektronischen Bauelemente 3, 4 und die Abstandshalter 10, insbesondere eine Leiterbahnstruktur. Die vorderseitige Lage 13 ist hier in fünf elektrisch voneinander getrennte Bereiche 13a bis 13e aufgeteilt. Ein Kontaktieren oder Verbinden mit der Leiterplatte 11 meint insbesondere ein Kontaktieren oder Verbinden mit dieser vorderseitigen Lage 13 bzw. 13a bis 13e. Der Abstandshalter 10 dient dabei einem Höhenausgleich zwischen dem Leadframe 1 und der vorderseitigen Lage 13, so dass der Leadframe 1 zur Verbindung mit der vorderseitigen Lage 13 nicht gebogen zu werden braucht. In a following step S6, the subpages 6 the electronic components 3 . 4 as well as the spacers 10 with a common circuit board 11 contacted. The common circuit board 11 is a DCB board with a plate-shaped ceramic substrate 12 , a front, structured location 13 made of copper and a back layer 14 made of copper. The front side situation 13 forms a bottom wiring layer for the electronic components 3 . 4 and the spacers 10 , in particular a conductor track structure. The front side situation 13 here is in five electrically separated areas 13a to 13e divided up. Contacting or connecting to the circuit board 11 in particular, means contacting or connecting with this front-side layer 13 respectively. 13a to 13e , The spacer 10 serves a height compensation between the leadframe 1 and the frontal situation 13 so that the leadframe 1 for connection with the front-side layer 13 does not need to be bent.

Um eine mechanisch stabile Kontaktierung mit einem besonders geringen Widerstand zu erreichen, werden in einem folgenden Schritt S7 die zuvor verbundenen Elemente 1 bis 14 des Leistungselektronikmoduls L einem Sinterpressablauf unterzogen. Dazu werden diese Elemente 1 bis 14 in eine passende Form (z.B. einen Stempel) gegeben, in die optional zuvor eine Druckausgleichsfolie (o. Abb.) gelegt worden ist. In der Form werden die Elemente 1 bis 14 druckbeaufschlagt, wodurch die Silber-Sinterpaste bzw. die Silber-Sinterschicht (o. Abb.) zumindest teilweise sintert. Die gesinterte Silberschicht ist mechanisch erheblich stabiler und bewirkt eine verbesserte Haftung als die nicht-gesinterte Silberpaste. Auch sind ein elektrischer und ein thermischer Widerstand weit geringer. In order to achieve a mechanically stable contacting with a particularly low resistance, in a following step S7, the previously connected elements become 1 to 14 the power electronics module L subjected to a Sinterpressablaufablauf. These are the elements 1 to 14 into a suitable shape (eg a stamp), into which optionally a pressure compensation foil (not shown) has been placed. In the form are the elements 1 to 14 pressurized, whereby the silver sintering paste or the silver sintered layer (not shown) at least partially sintered. The sintered silver layer is mechanically much more stable and provides improved adhesion than the non-sintered silver paste. Also, electrical and thermal resistance are much lower.

In einem folgenden Schritt S8 wird der Leadframe 1 mittels Durchtrennens der Hilfsstege in die einzelnen Leiterbahnen 2a–2d aufgetrennt. In a following step S8, the leadframe becomes 1 by severing the auxiliary webs in the individual tracks 2a - 2d separated.

Obwohl die Erfindung im Detail durch das gezeigte Ausführungsbeispiel näher illustriert und beschrieben wurde, so ist die Erfindung nicht darauf eingeschränkt und andere Variationen können vom Fachmann hieraus abgeleitet werden, ohne den Schutzumfang der Erfindung zu verlassen. Although the invention has been further illustrated and described in detail by the illustrated embodiment, the invention is not so limited and other variations can be derived therefrom by those skilled in the art without departing from the scope of the invention.

So brauchen die in 1 gezeigten Verfahrensschritte nicht in dieser Reihenfolge ablaufen. Beispielsweise mag Schritt S2 nach Schritt S3a / S3b und/oder S4 durchgeführt werden. Auch mag Schritt S4 vor Schritt S3a / S3b durchgeführt werden. So the need in 1 shown process steps do not run in this order. For example, step S2 may be performed after step S3a / S3b and / or S4. Also, step S4 may be performed before step S3a / S3b.

Allgemein kann unter "ein", "eine" usw. eine Einzahl oder eine Mehrzahl verstanden werden, insbesondere im Sinne von "mindestens ein" oder "ein oder mehrere" usw., solange dies nicht explizit ausgeschlossen ist, z.B. durch den Ausdruck "genau ein" usw. Generally, "on", "an", etc. may be taken to mean a singular or a plurality, in particular in the sense of "at least one" or "one or more" etc., unless this is explicitly excluded, e.g. by the expression "exactly one", etc.

Auch kann eine Zahlenangabe genau die angegebene Zahl als auch einen üblichen Toleranzbereich umfassen, solange dies nicht explizit ausgeschlossen ist. Also, a number may include exactly the specified number as well as a usual tolerance range, as long as this is not explicitly excluded.

Claims (12)

Verfahren (S1–S8) zum Herstellen eines Elektronikmoduls (L), insbesondere Leistungselektronikmoduls, welches Verfahren ein Kontaktieren mindestens eines Halbleiterchips (3, 4) mit mindestens einem Leadframe (1) umfasst, wobei – der Halbleiterchip (3, 4) an seiner Oberseite (7) und an seiner Unterseite (6) jeweils mindestens einen elektrischen Anschluss (8, 9) aufweist und – der mindestens eine Leadframe (1) mindestens einen Anschluss (8, 9) einer der Seiten direkt kontaktiert (S5). Method (S1-S8) for producing an electronic module (L), in particular a power electronics module, which method comprises contacting at least one semiconductor chip ( 3 . 4 ) with at least one leadframe ( 1 ), wherein - the semiconductor chip ( 3 . 4 ) on its upper side ( 7 ) and on its underside ( 6 ) at least one electrical connection ( 8th . 9 ) and - the at least one leadframe ( 1 ) at least one connection ( 8th . 9 ) one of the pages directly contacted (S5). Verfahren (S1–S8) nach Anspruch 1, wobei das Verfahren (S1–S8) mindestens die folgenden Schritte umfasst: (i) Bereitstellen (S1) des Leadframes (1); (ii) Kontaktieren (S5) des Leadframes (1) mit der Oberseite (7) mindestens eines Halbleiterchips (3, 4); und (iii) Kontaktieren (S6) der Unterseite (6) dieses mindestens einen Halbleiterchips (3, 4) sowie des Leadframes (1) mit einer gemeinsamen Leiterplatte (11). Method (S1-S8) according to claim 1, wherein the method (S1-S8) comprises at least the following steps: (i) providing (S1) of the leadframe ( 1 ); (ii) contacting (S5) the leadframe ( 1 ) with the top ( 7 ) at least one semiconductor chip ( 3 . 4 ); and (iii) contacting (S6) the underside ( 6 ) this at least one semiconductor chip ( 3 . 4 ) as well as the leadframe ( 1 ) with a common printed circuit board ( 11 ). Verfahren (S1–S8) nach Anspruch 2, wobei Schritt (ii) mindestens die folgenden Schritte umfasst: (iia) Belegen (S3a) vorgesehener Kontaktbereiche des Leadframes (1) mit einem jeweiligen Haftvermittler; und (iib) Anbringen (S5) mindestens eines Anschlusses (8, 9) mindestens eines Halbleiterchips (3, 4) an einem jeweiligen Kontaktbereich. Method (S1-S8) according to claim 2, wherein step (ii) comprises at least the following steps: (iia) occupying (S3a) provided contact areas of the leadframe ( 1 ) with a respective bonding agent; and (iib) attaching (S5) at least one port ( 8th . 9 ) at least one semiconductor chip ( 3 . 4 ) at a respective contact area. Verfahren (S1–S8) nach Anspruch 3, wobei in Schritt (iib) eine Flip-Chip-Montagetechnik verwendet wird.  Method (S1-S8) according to claim 3, wherein in step (iib) a flip-chip mounting technique is used. Verfahren (S1–S8) nach einem der Ansprüche 2 oder 3, wobei Schritt (iii) ein Kontaktieren (S6) über einen Haftvermittler umfasst.  Method (S1-S8) according to one of claims 2 or 3, wherein step (iii) comprises contacting (S6) via an adhesion promoter. Verfahren (S1–S8) nach einer Kombination der Ansprüche 3 oder 4 mit Anspruch 5, wobei der Haftvermittler ein Sintermaterial ist und sich Schritt (iii) ein Schritt (iv) eines gemeinsamen Sinterpressablaufs (S7) anschließt.  Method (S1-S8) according to a combination of claims 3 or 4 with claim 5, wherein the adhesion promoter is a sintered material and step (iii) is followed by a step (iv) of a common sintering process (S7). Verfahren (S1–S8) nach einem der Ansprüche 2 bis 6, wobei zwischen den Schritten (i) und (ii) ein Schritt (S4) eines Belegens mindestens eines Abschnitts des Leadframes außerhalb der Kontaktbereiche mit einem elektrisch isolierenden Material durchgeführt wird.  Method (S1-S8) according to any one of claims 2 to 6, wherein between steps (i) and (ii) a step (S4) of covering at least a portion of the leadframe outside the contact areas with an electrically insulating material is performed. Verfahren (S1–S8) nach Anspruch 7, wobei zumindest ein Abschnitt des Leadframes (1) mit dem elektrisch isolierenden Material belegt wird, welcher oberhalb eines Halbleiterchips (3) zu positionieren ist. Method (S1-S8) according to claim 7, wherein at least a portion of the leadframe ( 1 ) is coated with the electrically insulating material, which above a semiconductor chip ( 3 ) is to be positioned. Verfahren (S1–S8) nach einem der Ansprüche 2 bis 8, wobei sich Schritt (iii) oder Schritt (iv) ein Schritt (v) eines Auftrennens (S8) des Leadframes (1, 2, 2a–2d) anschließt. Method (S1-S8) according to one of claims 2 to 8, wherein step (iii) or step (iv) comprises a step (v) of separating (S8) the leadframe ( 1 . 2 . 2a - 2d ). Verfahren (S1–S8) nach einem der vorhergehenden Ansprüche, wobei das mindestens eine elektronische Bauelement mindestens einen Leistungshalbleiterchip (3, 4), insbesondere mindestens einen Leistungsschalter (3), aufweist. Method (S1-S8) according to one of the preceding claims, wherein the at least one electronic component comprises at least one power semiconductor chip ( 3 . 4 ), in particular at least one circuit breaker ( 3 ), having. Verfahren (S1–S8) nach einem der Ansprüche 2 bis 10, wobei die Leiterplatte (11) eine DCB- oder eine IMS-Leiterplatte ist. Method (S1-S8) according to one of claims 2 to 10, wherein the printed circuit board ( 11 ) is a DCB or IMS circuit board. Elektronikmodul (L), welches mittels eines Verfahrens (S1–S8) nach einem der vorhergehenden Ansprüche hergestellt worden ist.  Electronic module (L) which has been produced by means of a method (S1-S8) according to one of the preceding claims.
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