GB895326A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB895326A GB895326A GB1947858A GB1947858A GB895326A GB 895326 A GB895326 A GB 895326A GB 1947858 A GB1947858 A GB 1947858A GB 1947858 A GB1947858 A GB 1947858A GB 895326 A GB895326 A GB 895326A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diode
- block
- envelope
- copper
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052802 copper Inorganic materials 0.000 abstract 4
- 239000010949 copper Substances 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000011324 bead Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Rectifiers (AREA)
Abstract
895,326. Semi-conductor rectifiers. GENERAL ELECTRIC CO. Ltd. June 10, 1959 [June 18, 1958], No. 19478/58. Class 37. In a semi-conductor device of the kind in which one portion of a semi - conductor body is in good electrical and thermal contact with a metallic part of an envelope, which encloses the said body and is adapted to be maintained in good thermal contact with a metallic member outside the envelope, the lead for a second portion of the said body includes a relatively massive part disposed inside the envelope and in good thermal contact with said second portion. As shown, a rectifier for use with low-frequency A.C. comprises a wafer 1 of P-type silicon, of which one surface is doped with boron to produce a low resistivity P-type region, and the opposite surface is doped with phosphorus to produce a region of N-type conductivity, each surface being subsequently plated with nickel and then vapour-coated with gold. The diode thus formed is mounted between two cylindrical copper blocks 3, 13, the contact surfaces of which are coated with gold, a lead disc being interposed between the diode and each copper block and soldering being effected by heating the assembly at 400‹ C. in a nitrogen atmosphere, a wire 15 having been previously brazed to the base of a central conical recess 18 in the block 13. The exposed portions of the diode are then coated with silicone resin which is heat cured, after which a copper cap 4, into which a copper tube 12 to accommodate wire 15 is sealed through a glass bead 11, is placed over the diode and the block 13, and flanges 5, 6, on block 3 and cap 4, respectively, are sealed by cold welding in a nitrogen atmosphere. A threaded stub 7 at the end of block 3 remote from the diode facilitates its clamping to a metallic cooling- member 8. Specification 817,636 is referred to.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1947858A GB895326A (en) | 1958-06-18 | 1958-06-18 | Improvements in or relating to semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1947858A GB895326A (en) | 1958-06-18 | 1958-06-18 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB895326A true GB895326A (en) | 1962-05-02 |
Family
ID=10130037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1947858A Expired GB895326A (en) | 1958-06-18 | 1958-06-18 | Improvements in or relating to semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB895326A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3292056A (en) * | 1963-03-16 | 1966-12-13 | Siemens Ag | Thermally stable semiconductor device with an intermediate plate for preventing flashover |
US3450962A (en) * | 1966-02-01 | 1969-06-17 | Westinghouse Electric Corp | Pressure electrical contact assembly for a semiconductor device |
-
1958
- 1958-06-18 GB GB1947858A patent/GB895326A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3292056A (en) * | 1963-03-16 | 1966-12-13 | Siemens Ag | Thermally stable semiconductor device with an intermediate plate for preventing flashover |
US3450962A (en) * | 1966-02-01 | 1969-06-17 | Westinghouse Electric Corp | Pressure electrical contact assembly for a semiconductor device |
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