GB856930A - Improvements in or relating to information storage devices - Google Patents
Improvements in or relating to information storage devicesInfo
- Publication number
- GB856930A GB856930A GB7080/57A GB708057A GB856930A GB 856930 A GB856930 A GB 856930A GB 7080/57 A GB7080/57 A GB 7080/57A GB 708057 A GB708057 A GB 708057A GB 856930 A GB856930 A GB 856930A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- oxide
- plate
- film
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/42—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically- coupled or feedback-coupled
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
856,930. Coating by vapour deposition. SOC D'ELECTRONIQUE ET D'AUTOMATISME S.A. March 4, 1957, No. 7080/57. Class 82(2) [Also in Groups XXXVI and XL(a)] An information storage element comprises an electroluminescent and visible-light luminescent layer 1 and a photoresistive layer 2 between a pair of translucent electrodes 3 and 4. The material of the luminescent layer 1 can be a complex of oxides and/or sulphides, e.g. zinc oxide actuated by samarium oxide. The material of the photo-resistive layer 2 can be silicon, germanium or tin oxide or antimony oxide. The electrodes 3 and 4 can be film deposits of aluminium. In making the storage element a film of aluminium is formed by an evaporation process in vacuum on a plate of high melting point glass and a plate bearing a coating of antimony is placed opposite the film. The coating of antimony can be formed by evaporation into the plate in a vacuum of, e.g. 10-4 mms., from crucibles arranged at the four apices of a virtual surface parallel to the plate. An oxygen atmosphere is established under a constant low pressure and a D.C. voltage applied across the antimony-supporting plate and the aluminium film to form a layer of antimony oxide on the aluminium film. The antimony-coated plate is replaced by a plate coated as above described with an alloy of zinc and 1% samarium and the discharge process repeated to form on the layer ofantimony oxide a layer of zinc oxide activated by samarium oxide. A further aluminium film is evaporated on to this layer. A raster generator is made by depositing on a supporting plate, of a high melting' point dielectric material, such as glass, ceramics or enamelled metal. a network of conductors by a serigraphy process (through a silk screen) by painting with a mixture of pulverulent silver and enamel of low melting point in an essential, oil, and heating the plate in a H.F. induction oven. The conductors are then thickened by a rhodium deposition and optically polished. A layer of luminescent material comprising zinc oxide and 1% of copper oxide is formed over the network by the process previously described. A further conductor network is deposited on the luminescent layer by evaporating thereon a continuous film of aluminium and photo-etching the film.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1042648X | 1956-03-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB856930A true GB856930A (en) | 1960-12-21 |
Family
ID=9590170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7080/57A Expired GB856930A (en) | 1956-03-03 | 1957-03-04 | Improvements in or relating to information storage devices |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH345035A (en) |
DE (1) | DE1042648B (en) |
FR (1) | FR1145506A (en) |
GB (1) | GB856930A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3109163A (en) * | 1958-12-08 | 1963-10-29 | Gen Mills Inc | Memory system and method utilizing a semiconductor containing a grain boundary |
NL249872A (en) * | 1959-04-24 | |||
DE1197929C2 (en) * | 1961-06-22 | 1974-11-07 | SEMI-FIXED STORAGE | |
DE1235985B (en) * | 1964-02-06 | 1967-03-09 | Gen Precision Inc | Device for writing and storing images |
-
1956
- 1956-03-03 FR FR1145506D patent/FR1145506A/en not_active Expired
-
1957
- 1957-03-01 CH CH345035D patent/CH345035A/en unknown
- 1957-03-02 DE DES52574A patent/DE1042648B/en active Pending
- 1957-03-04 GB GB7080/57A patent/GB856930A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1042648B (en) | 1958-11-06 |
FR1145506A (en) | 1957-10-28 |
CH345035A (en) | 1960-03-15 |
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