GB853568A - Method of bonding an electric conductor to the metallic surface electrode of a dry type rectifier - Google Patents

Method of bonding an electric conductor to the metallic surface electrode of a dry type rectifier

Info

Publication number
GB853568A
GB853568A GB3030558A GB3030558A GB853568A GB 853568 A GB853568 A GB 853568A GB 3030558 A GB3030558 A GB 3030558A GB 3030558 A GB3030558 A GB 3030558A GB 853568 A GB853568 A GB 853568A
Authority
GB
United Kingdom
Prior art keywords
bonding
electric conductor
surface electrode
dry type
metallic surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3030558A
Inventor
Fritz Maiwirth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WALTER BRANDT GmbH
Original Assignee
WALTER BRANDT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WALTER BRANDT GmbH filed Critical WALTER BRANDT GmbH
Priority to GB3030558A priority Critical patent/GB853568A/en
Publication of GB853568A publication Critical patent/GB853568A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

853,568. Plate rectifiers. BRANDT G.m.b.H. W. Sept. 23, 1958, No. 30305/58. Class 37 The semi-conductor layer in a dry plate rectifier is provided with a synthetic insulating layer containing granular material, the upper particle portions of which project from the insulating layer, the latter being covered with a metallic layer to which a current lead is attached. The synthetic layer may be heat cured after application of the granular particles.
GB3030558A 1958-09-23 1958-09-23 Method of bonding an electric conductor to the metallic surface electrode of a dry type rectifier Expired GB853568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3030558A GB853568A (en) 1958-09-23 1958-09-23 Method of bonding an electric conductor to the metallic surface electrode of a dry type rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3030558A GB853568A (en) 1958-09-23 1958-09-23 Method of bonding an electric conductor to the metallic surface electrode of a dry type rectifier

Publications (1)

Publication Number Publication Date
GB853568A true GB853568A (en) 1960-11-09

Family

ID=10305528

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3030558A Expired GB853568A (en) 1958-09-23 1958-09-23 Method of bonding an electric conductor to the metallic surface electrode of a dry type rectifier

Country Status (1)

Country Link
GB (1) GB853568A (en)

Similar Documents

Publication Publication Date Title
ES301500A1 (en) Improvements improved in the manufacture of fences, insulators and semiconductors. (Machine-translation by Google Translate, not legally binding)
GB853568A (en) Method of bonding an electric conductor to the metallic surface electrode of a dry type rectifier
GB1040630A (en) A method of determining the specific resistance of a semiconductor material in the from of a thin layer
GB1033813A (en) Electrical semiconductor device
ES298472A1 (en) Procedure and apparatus for depositing electrolytically a superficial layer on metal articles (Machine-translation by Google Translate, not legally binding)
ES289957A1 (en) Controlled rectifier comprising a resistive plating interconnecting adjacent n and p layers
GB858990A (en) Improvements in or relating to selenium dry rectifier elements
CH365463A (en) Device for the electrical discharge machining of workpieces made of electrically conductive material
GB869724A (en) Improvements in and relating to electrical rectifier assemblies
JPS5481073A (en) Sealing method for semiconductor element
GB860453A (en) Improvements in or relating to p-n-junction rectifiers
GB935255A (en) A selenium rectifier
GB1078866A (en) Improvements in or relating to methods of providing surface layers on a carrier
CA587971A (en) Cooling of dry surface contact alternating electric current rectifier assemblies
JPS54128276A (en) Resin-sealed semiconductor device
GB979545A (en) Method of manufacturing encapsulated rectifier units
ES243958A1 (en) Procedure for the connection of a current conductor with the metal surface electrode of a dry plate rectifier (Machine-translation by Google Translate, not legally binding)
PURITIS et al. Possibilities of determining the permissible reverse-bias current and voltage in semiconductor devices by a nondestructive method
GB698585A (en) Improvements in and relating to asymmetrically conductive devices
GB713403A (en) A dry-plate rectifier with an intermediate layer consisting of a chemical compound
GB786782A (en) A metal rectifier unit
GB819656A (en) Improvements in or relating to crystal diodes
JPS5610941A (en) Semiconductor device
GB877292A (en) Improvements in or relating to dry rectifier stack assemblies
JPS5766652A (en) Semiconductor device