GB785467A - Improvements in or relating to the manufacture of semi-conductor devices - Google Patents
Improvements in or relating to the manufacture of semi-conductor devicesInfo
- Publication number
- GB785467A GB785467A GB37200/54A GB3720054A GB785467A GB 785467 A GB785467 A GB 785467A GB 37200/54 A GB37200/54 A GB 37200/54A GB 3720054 A GB3720054 A GB 3720054A GB 785467 A GB785467 A GB 785467A
- Authority
- GB
- United Kingdom
- Prior art keywords
- germanium
- indium
- punch
- plate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 15
- 229910052738 indium Inorganic materials 0.000 abstract 14
- 229910052732 germanium Inorganic materials 0.000 abstract 13
- 239000012535 impurity Substances 0.000 abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 3
- 229910000679 solder Inorganic materials 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- MPCRDALPQLDDFX-UHFFFAOYSA-L Magnesium perchlorate Chemical compound [Mg+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MPCRDALPQLDDFX-UHFFFAOYSA-L 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011324 bead Substances 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000005337 ground glass Substances 0.000 abstract 1
- 108010036050 human cationic antimicrobial protein 57 Proteins 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB37200/54A GB785467A (en) | 1954-12-23 | 1954-12-23 | Improvements in or relating to the manufacture of semi-conductor devices |
US554010A US2830920A (en) | 1954-12-23 | 1955-12-19 | Manufacture of semi-conductor devices |
FR1140519D FR1140519A (fr) | 1954-12-23 | 1955-12-20 | Fabrication de semi-conducteurs |
CH338906D CH338906A (de) | 1954-12-23 | 1955-12-23 | Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB37200/54A GB785467A (en) | 1954-12-23 | 1954-12-23 | Improvements in or relating to the manufacture of semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB785467A true GB785467A (en) | 1957-10-30 |
Family
ID=10394592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB37200/54A Expired GB785467A (en) | 1954-12-23 | 1954-12-23 | Improvements in or relating to the manufacture of semi-conductor devices |
Country Status (4)
Country | Link |
---|---|
US (1) | US2830920A (de) |
CH (1) | CH338906A (de) |
FR (1) | FR1140519A (de) |
GB (1) | GB785467A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1098102B (de) * | 1951-06-08 | 1961-01-26 | Standard Elektrik Lorenz Ag | Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung |
CN115655832A (zh) * | 2022-12-09 | 2023-01-31 | 华芯半导体研究院(北京)有限公司 | 一种化合物半导体外延片霍尔样品制备装置 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1446221A1 (de) * | 1951-01-28 | 1969-09-25 | Philips Patentverwaltung | Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen |
BE557039A (de) * | 1956-04-27 | |||
US2914716A (en) * | 1956-05-25 | 1959-11-24 | Gen Electric | Semiconductor mounting |
US2943005A (en) * | 1957-01-17 | 1960-06-28 | Rca Corp | Method of alloying semiconductor material |
US2981875A (en) * | 1957-10-07 | 1961-04-25 | Motorola Inc | Semiconductor device and method of making the same |
US3090116A (en) * | 1957-11-04 | 1963-05-21 | Gen Electric Co Ltd | Method of cold bonding metallic parts |
US2947925A (en) * | 1958-02-21 | 1960-08-02 | Motorola Inc | Transistor and method of making the same |
US3080510A (en) * | 1959-01-19 | 1963-03-05 | Rauland Corp | Semi-conductor mounting apparatus |
NL252974A (de) * | 1959-07-24 | |||
GB928110A (en) * | 1960-01-06 | 1963-06-06 | Pacific Semiconductors Inc | Semiconductor devices and methods for assembling them |
US3186065A (en) * | 1960-06-10 | 1965-06-01 | Sylvania Electric Prod | Semiconductor device and method of manufacture |
US3030561A (en) * | 1960-07-01 | 1962-04-17 | Sprague Electric Co | Transistors and method of making |
US3217213A (en) * | 1961-06-02 | 1965-11-09 | Slater Electric Inc | Semiconductor diode construction with heat dissipating housing |
US3134699A (en) * | 1961-07-25 | 1964-05-26 | Nippon Electric Co | Method of manufacturing semiconductor devices |
US3363308A (en) * | 1962-07-30 | 1968-01-16 | Texas Instruments Inc | Diode contact arrangement |
US3358364A (en) * | 1963-04-25 | 1967-12-19 | Talon Inc | Method of making electrical contacts by cold welding soldering and coining |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
US2731704A (en) * | 1952-12-27 | 1956-01-24 | Raytheon Mfg Co | Method of making transistors |
-
1954
- 1954-12-23 GB GB37200/54A patent/GB785467A/en not_active Expired
-
1955
- 1955-12-19 US US554010A patent/US2830920A/en not_active Expired - Lifetime
- 1955-12-20 FR FR1140519D patent/FR1140519A/fr not_active Expired
- 1955-12-23 CH CH338906D patent/CH338906A/de unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1098102B (de) * | 1951-06-08 | 1961-01-26 | Standard Elektrik Lorenz Ag | Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung |
CN115655832A (zh) * | 2022-12-09 | 2023-01-31 | 华芯半导体研究院(北京)有限公司 | 一种化合物半导体外延片霍尔样品制备装置 |
Also Published As
Publication number | Publication date |
---|---|
CH338906A (de) | 1959-06-15 |
US2830920A (en) | 1958-04-15 |
FR1140519A (fr) | 1957-07-24 |
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