GB721026A - Process for external profiling of semiconductor devices - Google Patents

Process for external profiling of semiconductor devices

Info

Publication number
GB721026A
GB721026A GB19225/53A GB1922553A GB721026A GB 721026 A GB721026 A GB 721026A GB 19225/53 A GB19225/53 A GB 19225/53A GB 1922553 A GB1922553 A GB 1922553A GB 721026 A GB721026 A GB 721026A
Authority
GB
United Kingdom
Prior art keywords
block
interface
immersed
semi
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19225/53A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES29621A external-priority patent/DE1031893B/de
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB721026A publication Critical patent/GB721026A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
GB19225/53A 1952-08-01 1953-07-10 Process for external profiling of semiconductor devices Expired GB721026A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES29621A DE1031893B (de) 1952-08-01 1952-08-01 Verfahren zur aeusseren Formgebung von Halbleiteranordnungen, insbesondere fuer Gleichrichter- und Verstaerkerzwecke mit Halbleitern aus Germanium oder Silizium
GB3142656A GB831304A (en) 1952-08-01 1956-10-16 Improvements in or relating to refining processes for semiconductor and other materials

Publications (1)

Publication Number Publication Date
GB721026A true GB721026A (en) 1954-12-29

Family

ID=32394886

Family Applications (2)

Application Number Title Priority Date Filing Date
GB19225/53A Expired GB721026A (en) 1952-08-01 1953-07-10 Process for external profiling of semiconductor devices
GB31896/55A Expired GB831303A (en) 1952-08-01 1955-11-08 Improvements in or relating to refining processes for semi-conductor and other materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB31896/55A Expired GB831303A (en) 1952-08-01 1955-11-08 Improvements in or relating to refining processes for semi-conductor and other materials

Country Status (6)

Country Link
US (1) US2914397A (fr)
BE (3) BE521845A (fr)
CH (2) CH320916A (fr)
FR (3) FR1081736A (fr)
GB (2) GB721026A (fr)
NL (2) NL96829C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977180C (de) * 1955-03-05 1965-06-24 Siemens Ag Verfahren zum elektrolytischen oertlich begrenzten Abtragen wie Bohren und Zerteilen halbleitenden kristallinen Materials

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB918028A (en) * 1958-09-04 1963-02-13 Philips Electrical Ind Ltd Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial
US3233977A (en) * 1961-05-31 1966-02-08 Westinghouse Electric Corp Furnace with means for adjusting a crucible in growing crystals
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2125173A (en) * 1932-07-29 1938-07-26 Union Carbide & Carbon Corp Apparatus for treating the defective surface metal of billets or the like
US2477411A (en) * 1944-06-10 1949-07-26 Linde Air Prod Co Metal surface conditioning apparatus and process
BE510303A (fr) * 1951-11-16
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977180C (de) * 1955-03-05 1965-06-24 Siemens Ag Verfahren zum elektrolytischen oertlich begrenzten Abtragen wie Bohren und Zerteilen halbleitenden kristallinen Materials

Also Published As

Publication number Publication date
NL180311B (nl)
BE521845A (fr)
CH360207A (de) 1962-02-15
BE552391A (fr)
US2914397A (en) 1959-11-24
FR1081736A (fr) 1954-12-22
FR71626E (fr) 1960-01-13
BE561652A (fr)
NL96829C (fr)
CH320916A (de) 1957-04-15
FR72391E (fr) 1960-03-31
GB831303A (en) 1960-03-30

Similar Documents

Publication Publication Date Title
US2656496A (en) Semiconductor translating device
GB814364A (en) Improvements in and relating to electrolytic etching
GB721026A (en) Process for external profiling of semiconductor devices
US3379625A (en) Semiconductor testing
US3078219A (en) Surface treatment of silicon carbide
US1535458A (en) Method of and apparatus for electrolytic refining
US3010885A (en) Method for electrolytically etching and thereafter anodically oxidizing an essentially monocrystalline semiconductor body having a p-n junction
US2844531A (en) Method of producing cavities in semiconductive surfaces
US3265599A (en) Formation of grain boundary photoorienter by electrolytic etching
ES337928A1 (es) Metodo para la formacion por electrocorrosion de contactos de aluminio en semiconductores.
GB810946A (en) Electrolytic shaping of semiconductive bodies
US2983655A (en) Treatment of semiconductive bodies
US3042593A (en) Electrochemical method for cleansing semiconductive devices
CN108519411A (zh) 一种氮化物半导体材料除氢激活提升p型导电性的方法
GB873484A (en) Improvements in and relating to the manufacture of semiconductive devices
US1706951A (en) Electrolytic apparatus
CN114899098A (zh) 一种半导体器件表面金属电极选择性去除的方法和装置
Eriksson et al. In-situ STM imaging of n-GaAs during anodic photocorrosion
GB755276A (en) Improvements in and relating to n-p-n junction devices
US3527682A (en) Process for electrolytically etching indium antimonide
GB728940A (en) Improvements in and relating to methods of making broad area semi-conductor devices
US762425A (en) Electrical battery.
CN202025764U (zh) 半导体薄膜晶体管
GB701474A (en) Improved method of electrolytically pointing wires and electrode system comprising a pointed electrode
ES320310A1 (es) Un metodo para fabricar un tiristor semiconductor