CH320916A - Verfahren zur Veränderung der äusseren Form von Halbleiterkörpern - Google Patents

Verfahren zur Veränderung der äusseren Form von Halbleiterkörpern

Info

Publication number
CH320916A
CH320916A CH320916DA CH320916A CH 320916 A CH320916 A CH 320916A CH 320916D A CH320916D A CH 320916DA CH 320916 A CH320916 A CH 320916A
Authority
CH
Switzerland
Prior art keywords
changing
external shape
semiconductor bodies
bodies
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Nat Geist Dietrich Dr Rer
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES29621A external-priority patent/DE1031893B/de
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Publication of CH320916A publication Critical patent/CH320916A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
CH320916D 1952-08-01 1953-07-27 Verfahren zur Veränderung der äusseren Form von Halbleiterkörpern CH320916A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES29621A DE1031893B (de) 1952-08-01 1952-08-01 Verfahren zur aeusseren Formgebung von Halbleiteranordnungen, insbesondere fuer Gleichrichter- und Verstaerkerzwecke mit Halbleitern aus Germanium oder Silizium
GB3142656A GB831304A (en) 1952-08-01 1956-10-16 Improvements in or relating to refining processes for semiconductor and other materials

Publications (1)

Publication Number Publication Date
CH320916A true CH320916A (de) 1957-04-15

Family

ID=32394886

Family Applications (2)

Application Number Title Priority Date Filing Date
CH320916D CH320916A (de) 1952-08-01 1953-07-27 Verfahren zur Veränderung der äusseren Form von Halbleiterkörpern
CH360207D CH360207A (de) 1952-08-01 1956-10-27 Verfahren zum zonalen Schmelzen eines Stabes

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH360207D CH360207A (de) 1952-08-01 1956-10-27 Verfahren zum zonalen Schmelzen eines Stabes

Country Status (6)

Country Link
US (1) US2914397A (de)
BE (3) BE561652A (de)
CH (2) CH320916A (de)
FR (3) FR1081736A (de)
GB (2) GB721026A (de)
NL (2) NL96829C (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977180C (de) * 1955-03-05 1965-06-24 Siemens Ag Verfahren zum elektrolytischen oertlich begrenzten Abtragen wie Bohren und Zerteilen halbleitenden kristallinen Materials
GB918028A (en) * 1958-09-04 1963-02-13 Philips Electrical Ind Ltd Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies
US3233977A (en) * 1961-05-31 1966-02-08 Westinghouse Electric Corp Furnace with means for adjusting a crucible in growing crystals
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2125173A (en) * 1932-07-29 1938-07-26 Union Carbide & Carbon Corp Apparatus for treating the defective surface metal of billets or the like
US2477411A (en) * 1944-06-10 1949-07-26 Linde Air Prod Co Metal surface conditioning apparatus and process
BE510303A (de) * 1951-11-16
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial

Also Published As

Publication number Publication date
GB721026A (en) 1954-12-29
NL180311B (nl)
NL96829C (de)
GB831303A (en) 1960-03-30
BE521845A (de)
FR72391E (fr) 1960-03-31
BE552391A (de)
FR71626E (fr) 1960-01-13
US2914397A (en) 1959-11-24
FR1081736A (fr) 1954-12-22
BE561652A (de)
CH360207A (de) 1962-02-15

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