GB700156A - Semiconducting crystal rectifier or amplifier and method of manufacturing it - Google Patents
Semiconducting crystal rectifier or amplifier and method of manufacturing itInfo
- Publication number
- GB700156A GB700156A GB16256/52A GB1625652A GB700156A GB 700156 A GB700156 A GB 700156A GB 16256/52 A GB16256/52 A GB 16256/52A GB 1625652 A GB1625652 A GB 1625652A GB 700156 A GB700156 A GB 700156A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- germanium
- die
- silicon
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE311394X | 1951-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB700156A true GB700156A (en) | 1953-11-25 |
Family
ID=6129531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB16256/52A Expired GB700156A (en) | 1951-07-03 | 1952-06-27 | Semiconducting crystal rectifier or amplifier and method of manufacturing it |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE512585A (https=) |
| CH (1) | CH311394A (https=) |
| GB (1) | GB700156A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1027320B (de) * | 1953-12-30 | 1958-04-03 | Ibm Deutschland | Spitzentransistor, dessen Halbleiteroberflaeche teilweise um einen geringen Dickenbetag abgetragen ist |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2927220A1 (de) * | 1979-07-05 | 1981-01-15 | Wacker Chemitronic | Verfahren zur stapelfehlerinduzierenden oberflaechenzerstoerung von halbleiterscheiben |
-
0
- BE BE512585D patent/BE512585A/xx unknown
-
1952
- 1952-06-27 GB GB16256/52A patent/GB700156A/en not_active Expired
- 1952-06-28 CH CH311394D patent/CH311394A/de unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1027320B (de) * | 1953-12-30 | 1958-04-03 | Ibm Deutschland | Spitzentransistor, dessen Halbleiteroberflaeche teilweise um einen geringen Dickenbetag abgetragen ist |
Also Published As
| Publication number | Publication date |
|---|---|
| CH311394A (de) | 1955-11-30 |
| BE512585A (https=) |
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