GB700156A - Semiconducting crystal rectifier or amplifier and method of manufacturing it - Google Patents

Semiconducting crystal rectifier or amplifier and method of manufacturing it

Info

Publication number
GB700156A
GB700156A GB16256/52A GB1625652A GB700156A GB 700156 A GB700156 A GB 700156A GB 16256/52 A GB16256/52 A GB 16256/52A GB 1625652 A GB1625652 A GB 1625652A GB 700156 A GB700156 A GB 700156A
Authority
GB
United Kingdom
Prior art keywords
etching
germanium
die
silicon
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16256/52A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB700156A publication Critical patent/GB700156A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)

Abstract

700,156. Etching. STANDARD TELEPHONES & CABLES, Ltd. June 27, 1952 [July 3, 1951], No. 16256/52. Class 100 (2). [Also in Group XXXVI] The point contacts on a semi-conductor e.g. germanium or silicon, sre located at the ends of grooves which terminate at a pre-determined distance from each other so that the contacts are given the desired spacing. One groove may be a fixed point. Etching.-The germanium or silicon 1, Figs. 5a, 5b, has grooves defined by insulating material 2, and a die 9 shaped to the groove is oscillated normally to the surface 1 by a supersonic generator ; the etching fluid has hard particles, such as carborundum dust, diamond dust or emery powder, suspended in it, so that the oscillations of the die 9 cause the hard particles to impinge against the surface to be etched as well as keeping the etching solution in circulation.
GB16256/52A 1951-07-03 1952-06-27 Semiconducting crystal rectifier or amplifier and method of manufacturing it Expired GB700156A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE311394X 1951-07-03

Publications (1)

Publication Number Publication Date
GB700156A true GB700156A (en) 1953-11-25

Family

ID=6129531

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16256/52A Expired GB700156A (en) 1951-07-03 1952-06-27 Semiconducting crystal rectifier or amplifier and method of manufacturing it

Country Status (3)

Country Link
BE (1) BE512585A (en)
CH (1) CH311394A (en)
GB (1) GB700156A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027320B (en) * 1953-12-30 1958-04-03 Ibm Deutschland Tip transistor, the semiconductor surface of which is partially worn away by a small amount of thickness

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2927220A1 (en) * 1979-07-05 1981-01-15 Wacker Chemitronic METHOD FOR STACK ERROR INDUCING SURFACE DESTRUCTION OF SEMICONDUCTOR DISC

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027320B (en) * 1953-12-30 1958-04-03 Ibm Deutschland Tip transistor, the semiconductor surface of which is partially worn away by a small amount of thickness

Also Published As

Publication number Publication date
CH311394A (en) 1955-11-30
BE512585A (en)

Similar Documents

Publication Publication Date Title
GB945746A (en) Miniature semiconductor devices and methods of producing same
GB1076440A (en) Isolation of semiconductor devices
ES485605A1 (en) Method of forming openings in masks for the production of semiconductor devices.
JPS54110783A (en) Semiconductor substrate and its manufacture
GB852003A (en) Improvements relating to the production of wafers of semi-conductor material
GB988903A (en) Semiconductor devices and methods of making same
GB968105A (en) Improvements in or relating to semiconductor devices
GB1025984A (en) The production of a silicon body with a pn-junction in it
GB1190893A (en) A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
GB1096484A (en) Improvements in or relating to semiconductor circuits
GB700156A (en) Semiconducting crystal rectifier or amplifier and method of manufacturing it
GB1487201A (en) Method of manufacturing semi-conductor devices
GB1206371A (en) The etching of silicon semiconductor wafers and semiconductor devices incorporating such wafers
GB1214238A (en) A process for manufacturing a semiconductor device
GB1031043A (en) Improvements in or relating to semi-conductor devices
IE34051B1 (en) Method for use in subdividing semiconductor wafers
GB1246022A (en) Method of manufacturing semiconductor devices
GB1211627A (en) Methods of manufacture of semiconductor elements and elements manufactured therby
GB1226880A (en)
JPS554980A (en) Semicondutor device manufacturing method
GB958247A (en) Semiconductor devices and methods of fabricating same
JPS5346270A (en) Production of semiconductor device
US2702361A (en) Semiconductor rectifier or amplifier of any desired surface profile
GB1297235A (en)
JPS5745256A (en) Manufacture of semiconductor device