GB700156A - Semiconducting crystal rectifier or amplifier and method of manufacturing it - Google Patents
Semiconducting crystal rectifier or amplifier and method of manufacturing itInfo
- Publication number
- GB700156A GB700156A GB16256/52A GB1625652A GB700156A GB 700156 A GB700156 A GB 700156A GB 16256/52 A GB16256/52 A GB 16256/52A GB 1625652 A GB1625652 A GB 1625652A GB 700156 A GB700156 A GB 700156A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- germanium
- die
- silicon
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000428 dust Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 229910001651 emery Inorganic materials 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE311394X | 1951-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB700156A true GB700156A (en) | 1953-11-25 |
Family
ID=6129531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB16256/52A Expired GB700156A (en) | 1951-07-03 | 1952-06-27 | Semiconducting crystal rectifier or amplifier and method of manufacturing it |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE512585A (enrdf_load_stackoverflow) |
| CH (1) | CH311394A (enrdf_load_stackoverflow) |
| GB (1) | GB700156A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1027320B (de) * | 1953-12-30 | 1958-04-03 | Ibm Deutschland | Spitzentransistor, dessen Halbleiteroberflaeche teilweise um einen geringen Dickenbetag abgetragen ist |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2927220A1 (de) * | 1979-07-05 | 1981-01-15 | Wacker Chemitronic | Verfahren zur stapelfehlerinduzierenden oberflaechenzerstoerung von halbleiterscheiben |
-
0
- BE BE512585D patent/BE512585A/xx unknown
-
1952
- 1952-06-27 GB GB16256/52A patent/GB700156A/en not_active Expired
- 1952-06-28 CH CH311394D patent/CH311394A/de unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1027320B (de) * | 1953-12-30 | 1958-04-03 | Ibm Deutschland | Spitzentransistor, dessen Halbleiteroberflaeche teilweise um einen geringen Dickenbetag abgetragen ist |
Also Published As
| Publication number | Publication date |
|---|---|
| BE512585A (enrdf_load_stackoverflow) | |
| CH311394A (de) | 1955-11-30 |
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