GB683248A - Improvements in or relating to the manufacture of crystal contact devices - Google Patents
Improvements in or relating to the manufacture of crystal contact devicesInfo
- Publication number
- GB683248A GB683248A GB24474/50A GB2447450A GB683248A GB 683248 A GB683248 A GB 683248A GB 24474/50 A GB24474/50 A GB 24474/50A GB 2447450 A GB2447450 A GB 2447450A GB 683248 A GB683248 A GB 683248A
- Authority
- GB
- United Kingdom
- Prior art keywords
- globule
- group
- spiked
- crystal
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Die Bonding (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7202527.A NL164481B (nl) | 1950-10-06 | Werkwijze voor het vervaardigen van een selectief permeabel membraanelement en inrichting ten gebruike bij de vervaardiging daarvan. | |
NL85899D NL85899C (nl) | 1950-10-06 | ||
GB24474/50A GB683248A (en) | 1950-10-06 | 1950-10-06 | Improvements in or relating to the manufacture of crystal contact devices |
US248308A US2723370A (en) | 1950-10-06 | 1951-09-26 | Electrically semiconductive crystalline body |
FR1042521D FR1042521A (fr) | 1950-10-06 | 1951-10-02 | Dispositif de contact à cristal |
DEG7122A DE865489C (de) | 1950-10-06 | 1951-10-03 | Verfahren zur Herstellung von Kristallkontaktvorrichtungen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB24474/50A GB683248A (en) | 1950-10-06 | 1950-10-06 | Improvements in or relating to the manufacture of crystal contact devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB683248A true GB683248A (en) | 1952-11-26 |
Family
ID=10212259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB24474/50A Expired GB683248A (en) | 1950-10-06 | 1950-10-06 | Improvements in or relating to the manufacture of crystal contact devices |
Country Status (5)
Country | Link |
---|---|
US (1) | US2723370A (nl) |
DE (1) | DE865489C (nl) |
FR (1) | FR1042521A (nl) |
GB (1) | GB683248A (nl) |
NL (2) | NL164481B (nl) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2805369A (en) * | 1952-08-27 | 1957-09-03 | Philips Corp | Semi-conductor electrode system |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2891202A (en) * | 1954-12-24 | 1959-06-16 | Bendix Aviat Corp | Semiconductor device |
US2866929A (en) * | 1955-12-01 | 1958-12-30 | Hughes Aircraft Co | Junction-type-semiconductor devices and method of making the same |
US2935386A (en) * | 1956-01-03 | 1960-05-03 | Clevite Corp | Method of producing small semiconductor silicon crystals |
DE1084840B (de) * | 1957-01-23 | 1960-07-07 | Intermetall | Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren |
US2815474A (en) * | 1957-01-25 | 1957-12-03 | Pacific Semiconductors Inc | Glass sealed semiconductor rectifier |
DE1230912B (de) * | 1960-06-09 | 1966-12-22 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung |
NL274757A (nl) * | 1961-02-15 | 1900-01-01 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2419561A (en) * | 1941-08-20 | 1947-04-29 | Gen Electric Co Ltd | Crystal contact of which one element is mainly silicon |
NL70486C (nl) * | 1945-12-29 | |||
NL89591C (nl) * | 1947-11-03 |
-
0
- NL NL85899D patent/NL85899C/xx active
- NL NL7202527.A patent/NL164481B/nl unknown
-
1950
- 1950-10-06 GB GB24474/50A patent/GB683248A/en not_active Expired
-
1951
- 1951-09-26 US US248308A patent/US2723370A/en not_active Expired - Lifetime
- 1951-10-02 FR FR1042521D patent/FR1042521A/fr not_active Expired
- 1951-10-03 DE DEG7122A patent/DE865489C/de not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2805369A (en) * | 1952-08-27 | 1957-09-03 | Philips Corp | Semi-conductor electrode system |
Also Published As
Publication number | Publication date |
---|---|
US2723370A (en) | 1955-11-08 |
DE865489C (de) | 1953-02-02 |
NL164481B (nl) | |
FR1042521A (fr) | 1953-11-02 |
NL85899C (nl) |
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