GB683248A - Improvements in or relating to the manufacture of crystal contact devices - Google Patents
Improvements in or relating to the manufacture of crystal contact devicesInfo
- Publication number
- GB683248A GB683248A GB24474/50A GB2447450A GB683248A GB 683248 A GB683248 A GB 683248A GB 24474/50 A GB24474/50 A GB 24474/50A GB 2447450 A GB2447450 A GB 2447450A GB 683248 A GB683248 A GB 683248A
- Authority
- GB
- United Kingdom
- Prior art keywords
- globule
- group
- spiked
- crystal
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/161—Containers comprising no base
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Die Bonding (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7202527.A NL164481B (nl) | 1950-10-06 | Werkwijze voor het vervaardigen van een selectief permeabel membraanelement en inrichting ten gebruike bij de vervaardiging daarvan. | |
| NL85899D NL85899C (enExample) | 1950-10-06 | ||
| GB24474/50A GB683248A (en) | 1950-10-06 | 1950-10-06 | Improvements in or relating to the manufacture of crystal contact devices |
| US248308A US2723370A (en) | 1950-10-06 | 1951-09-26 | Electrically semiconductive crystalline body |
| FR1042521D FR1042521A (fr) | 1950-10-06 | 1951-10-02 | Dispositif de contact à cristal |
| DEG7122A DE865489C (de) | 1950-10-06 | 1951-10-03 | Verfahren zur Herstellung von Kristallkontaktvorrichtungen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB24474/50A GB683248A (en) | 1950-10-06 | 1950-10-06 | Improvements in or relating to the manufacture of crystal contact devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB683248A true GB683248A (en) | 1952-11-26 |
Family
ID=10212259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24474/50A Expired GB683248A (en) | 1950-10-06 | 1950-10-06 | Improvements in or relating to the manufacture of crystal contact devices |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2723370A (enExample) |
| DE (1) | DE865489C (enExample) |
| FR (1) | FR1042521A (enExample) |
| GB (1) | GB683248A (enExample) |
| NL (2) | NL164481B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2805369A (en) * | 1952-08-27 | 1957-09-03 | Philips Corp | Semi-conductor electrode system |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2891202A (en) * | 1954-12-24 | 1959-06-16 | Bendix Aviat Corp | Semiconductor device |
| US2866929A (en) * | 1955-12-01 | 1958-12-30 | Hughes Aircraft Co | Junction-type-semiconductor devices and method of making the same |
| US2935386A (en) * | 1956-01-03 | 1960-05-03 | Clevite Corp | Method of producing small semiconductor silicon crystals |
| DE1084840B (de) * | 1957-01-23 | 1960-07-07 | Intermetall | Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren |
| US2815474A (en) * | 1957-01-25 | 1957-12-03 | Pacific Semiconductors Inc | Glass sealed semiconductor rectifier |
| DE1230912B (de) * | 1960-06-09 | 1966-12-22 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung |
| NL274757A (enExample) * | 1961-02-15 | 1900-01-01 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2419561A (en) * | 1941-08-20 | 1947-04-29 | Gen Electric Co Ltd | Crystal contact of which one element is mainly silicon |
| NL70486C (enExample) * | 1945-12-29 | |||
| NL89591C (enExample) * | 1947-11-03 |
-
0
- NL NL85899D patent/NL85899C/xx active
- NL NL7202527.A patent/NL164481B/xx unknown
-
1950
- 1950-10-06 GB GB24474/50A patent/GB683248A/en not_active Expired
-
1951
- 1951-09-26 US US248308A patent/US2723370A/en not_active Expired - Lifetime
- 1951-10-02 FR FR1042521D patent/FR1042521A/fr not_active Expired
- 1951-10-03 DE DEG7122A patent/DE865489C/de not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2805369A (en) * | 1952-08-27 | 1957-09-03 | Philips Corp | Semi-conductor electrode system |
Also Published As
| Publication number | Publication date |
|---|---|
| NL164481B (nl) | |
| US2723370A (en) | 1955-11-08 |
| NL85899C (enExample) | |
| DE865489C (de) | 1953-02-02 |
| FR1042521A (fr) | 1953-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1129200A (en) | High frequency field effect transistor | |
| GB877285A (en) | Improvements in semiconductor device | |
| GB688866A (en) | Improvements in or relating to crystal rectifiers | |
| GB683248A (en) | Improvements in or relating to the manufacture of crystal contact devices | |
| GB1099381A (en) | Solid state field-effect devices | |
| GB836370A (en) | Improvements in high current rectifier | |
| GB802987A (en) | Improvements in or relating to junction rectifiers or junction transistors | |
| GB935710A (en) | Improvements in controlled semiconductor rectifiers | |
| GB710245A (en) | Contact device | |
| GB780260A (en) | Improvements in or relating to electrical asymmetrical conducting devices having a crystalline semi-conductor | |
| JPS55150271A (en) | Semiconductor device | |
| JPS57104254A (en) | Lateral-transistor | |
| JPS572567A (en) | Semiconductor device | |
| JPS5291382A (en) | Insulating gate type field effect transistor | |
| GB1170185A (en) | Electrode Structure of a Semiconductor Device. | |
| JPS5939902B2 (ja) | 相補型絶縁ゲ−ト型電界効果半導体装置 | |
| JPS53119690A (en) | Semiconductor device | |
| JPS5353271A (en) | Manufacture for semiconductor device | |
| JPS5481087A (en) | Seiconductor integrated circuit | |
| JPS54154281A (en) | Bipolar semiconductor device and its manufacture | |
| JPS5269581A (en) | Device and manufacture for semiconductor | |
| JPS55154760A (en) | Semiconductor device | |
| JPS558034A (en) | Semiconductor device | |
| JPS55117273A (en) | Semiconductor device | |
| JPS56130920A (en) | Forming method of electrode for semiconductor device |