GB623459A - Improved method of treating the free surface of selenium electrodes - Google Patents

Improved method of treating the free surface of selenium electrodes

Info

Publication number
GB623459A
GB623459A GB6341/47A GB634147A GB623459A GB 623459 A GB623459 A GB 623459A GB 6341/47 A GB6341/47 A GB 6341/47A GB 634147 A GB634147 A GB 634147A GB 623459 A GB623459 A GB 623459A
Authority
GB
United Kingdom
Prior art keywords
selenium
chinoline
organic substance
layer
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6341/47A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB623459A publication Critical patent/GB623459A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

Landscapes

  • Organic Insulating Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Thermistors And Varistors (AREA)
GB6341/47A 1944-04-06 1947-03-06 Improved method of treating the free surface of selenium electrodes Expired GB623459A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL623459X 1944-04-06

Publications (1)

Publication Number Publication Date
GB623459A true GB623459A (en) 1949-05-18

Family

ID=19788502

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6341/47A Expired GB623459A (en) 1944-04-06 1947-03-06 Improved method of treating the free surface of selenium electrodes

Country Status (5)

Country Link
US (1) US2510361A (enExample)
BE (1) BE464100A (enExample)
DE (1) DE812570C (enExample)
GB (1) GB623459A (enExample)
NL (2) NL116213B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE516590A (enExample) * 1951-10-29
DE1007884B (de) * 1953-05-11 1957-05-09 Siemens Ag Verfahren zur Herstellung von Gleichrichterelementen mit Halbleitern, insbesondere von Selengleichrichtern, bei denen die Halbleiterschicht gerichtet kristallisiert ist
US2794943A (en) * 1955-04-05 1957-06-04 Sarkes Tarzian Selenium rectifier
US2841749A (en) * 1955-04-11 1958-07-01 Sarkes Tarzian Selenium rectifier
US2873414A (en) * 1955-06-16 1959-02-10 Sarkes Tarzian Selenium rectifier
US2875103A (en) * 1956-06-07 1959-02-24 Westinghouse Brake And Sigual Method of manufacturing selenium rectifiers
US2903631A (en) * 1958-06-17 1959-09-08 Gen Electric Selenium cells
US2903632A (en) * 1958-06-17 1959-09-08 Gen Electric Selenium cells
US4411698A (en) * 1982-08-02 1983-10-25 Xerox Corporation Process for reclaimation of high purity selenium, tellurtum, and arsenic from scrap alloys
US4548800A (en) * 1982-08-02 1985-10-22 Xerox Corporation Process for selenium purification
US4389389A (en) * 1982-08-02 1983-06-21 Xerox Corporation Process for preparation of high purity tellurium
US4460408A (en) * 1982-08-05 1984-07-17 Xerox Corporation Process for preparation of chalcogenide alloys by coreduction of esters
CN109273355B (zh) * 2018-06-06 2022-03-01 鹤壁维达科巽电气有限公司 一种硒整流片制备工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE415723A (enExample) * 1935-06-01
GB464268A (en) * 1935-11-22 1937-04-14 Philips Nv Improvements in electrode systems with unsymmetrical conductivity such as dry rectifier, or light-sensitive, cells
US2121603A (en) * 1936-05-30 1938-06-21 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
NL83633B (enExample) * 1936-08-13 1900-01-01
US2193598A (en) * 1936-09-05 1940-03-12 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
NL60402C (enExample) * 1940-07-03

Also Published As

Publication number Publication date
US2510361A (en) 1950-06-06
BE464100A (enExample) 1900-01-01
NL63032C (enExample) 1900-01-01
DE812570C (de) 1951-09-03
NL116213B (enExample) 1900-01-01

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