GB594959A - Improvements in asymmetrically conducting electrical devices and methods of making them - Google Patents

Improvements in asymmetrically conducting electrical devices and methods of making them

Info

Publication number
GB594959A
GB594959A GB19628/44A GB1962844A GB594959A GB 594959 A GB594959 A GB 594959A GB 19628/44 A GB19628/44 A GB 19628/44A GB 1962844 A GB1962844 A GB 1962844A GB 594959 A GB594959 A GB 594959A
Authority
GB
United Kingdom
Prior art keywords
silicon
strip
layer
lead
crust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19628/44A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB594959A publication Critical patent/GB594959A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819—Group VB metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
GB19628/44A 1943-07-28 1944-10-11 Improvements in asymmetrically conducting electrical devices and methods of making them Expired GB594959A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US496416A US2438110A (en) 1943-07-28 1943-07-28 Electrical translating materials and devices and method of making them

Publications (1)

Publication Number Publication Date
GB594959A true GB594959A (en) 1947-11-24

Family

ID=23972527

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19628/44A Expired GB594959A (en) 1943-07-28 1944-10-11 Improvements in asymmetrically conducting electrical devices and methods of making them

Country Status (3)

Country Link
US (1) US2438110A (xx)
BE (1) BE594959A (xx)
GB (1) GB594959A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975925C (de) * 1952-09-17 1962-12-13 Siemens Ag Verfahren zum Herstellen eines definierten, abgestuft verteilten Stoerstellengehaltes in einem Halbleiterkoerper

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL70486C (xx) * 1945-12-29
US2627600A (en) * 1946-08-19 1953-02-03 Robert H Rines Method of and apparatus for producing visual likenesses with the aid of radio waves
US2673311A (en) * 1948-07-24 1954-03-23 Sylvania Electric Prod Crystal amplifier
US2615965A (en) * 1948-07-24 1952-10-28 Sylvania Electric Prod Crystal amplifier device
US2642486A (en) * 1948-08-25 1953-06-16 Sylvania Electric Prod Electrical crystal unit
US2626985A (en) * 1948-08-25 1953-01-27 Sylvania Electric Prod Electrical crystal unit
US2632042A (en) * 1948-08-25 1953-03-17 Sylvania Electric Prod Electrical crystal unit
NL82014C (xx) * 1949-11-30
US2662984A (en) * 1950-01-27 1953-12-15 Gen Electric Co Ltd Crystal contact device
BE523522A (xx) * 1952-10-15
BE534505A (xx) * 1953-12-30
NL258754A (xx) * 1954-05-18 1900-01-01
NL107361C (xx) * 1955-04-22 1900-01-01
US2964830A (en) * 1957-01-31 1960-12-20 Westinghouse Electric Corp Silicon semiconductor devices
US3051878A (en) * 1957-05-02 1962-08-28 Sarkes Tarzian Semiconductor devices and method of manufacturing them
US2937110A (en) * 1958-07-17 1960-05-17 Westinghouse Electric Corp Protective treatment for semiconductor devices
US3382054A (en) * 1965-01-25 1968-05-07 Texas Instruments Inc Low melting point composite materials useful for brazing, soldering or the like

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB190806051A (en) * 1907-03-26 1908-07-16 Siemens Ag An Improved Process for Hardening Tantalum.
US925988A (en) * 1908-03-20 1909-06-22 Siemens Ag Process of hardening tantalum.
US1990277A (en) * 1930-09-13 1935-02-05 Feussner Otto Metals of the platinum group and certain alloys

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975925C (de) * 1952-09-17 1962-12-13 Siemens Ag Verfahren zum Herstellen eines definierten, abgestuft verteilten Stoerstellengehaltes in einem Halbleiterkoerper

Also Published As

Publication number Publication date
US2438110A (en) 1948-03-23
BE594959A (xx)

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