GB798213A - Improvements relating to semiconductor devices - Google Patents
Improvements relating to semiconductor devicesInfo
- Publication number
- GB798213A GB798213A GB33610/54A GB3361054A GB798213A GB 798213 A GB798213 A GB 798213A GB 33610/54 A GB33610/54 A GB 33610/54A GB 3361054 A GB3361054 A GB 3361054A GB 798213 A GB798213 A GB 798213A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- semiconductor devices
- improvements relating
- mixture
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
Abstract
A point contact electrode suitable for use in a semi-conductor device (see Group XXXVI) is made of a metal which has been coated with aluminium by heating in contact with aluminium powder in a non-oxidizing atmosphere. In the embodiment electrode wires of platinum or tungsten are heated in a mixture of 10-20 per cent aluminium powder with alumina at 400-600 DEG C. for 4 to 6 hours and preferably heated for a similar period at 800-1000 DEG C. after withdrawal from the mixture to diffuse the aluminium uniformly through the metal.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US394001A US2861230A (en) | 1953-11-24 | 1953-11-24 | Calorized point contact electrode for semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB798213A true GB798213A (en) | 1958-07-16 |
Family
ID=23557124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB33610/54A Expired GB798213A (en) | 1953-11-24 | 1954-11-19 | Improvements relating to semiconductor devices |
Country Status (3)
Country | Link |
---|---|
US (1) | US2861230A (en) |
FR (1) | FR1114651A (en) |
GB (1) | GB798213A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE534817A (en) * | 1954-01-14 | 1900-01-01 | ||
DE1086811B (en) * | 1958-04-24 | 1960-08-11 | Intermetall | Method for contacting and assembling silicon rectifiers alloyed by means of an aluminum wire |
US3211594A (en) * | 1961-12-19 | 1965-10-12 | Hughes Aircraft Co | Semiconductor device manufacture |
US3196328A (en) * | 1962-02-28 | 1965-07-20 | Hughes Aircraft Co | Low noise microwave mixer diode |
US3239376A (en) * | 1962-06-29 | 1966-03-08 | Bell Telephone Labor Inc | Electrodes to semiconductor wafers |
BE634311A (en) * | 1962-06-29 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1091057A (en) * | 1913-03-12 | 1914-03-24 | Gen Electric | Process of treating metals. |
US2319364A (en) * | 1938-05-06 | 1943-05-18 | Ziegs Paul | Electrical heating conductor and method of producing same |
US2402839A (en) * | 1941-03-27 | 1946-06-25 | Bell Telephone Labor Inc | Electrical translating device utilizing silicon |
-
1953
- 1953-11-24 US US394001A patent/US2861230A/en not_active Expired - Lifetime
-
1954
- 1954-11-19 GB GB33610/54A patent/GB798213A/en not_active Expired
- 1954-11-24 FR FR1114651D patent/FR1114651A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2861230A (en) | 1958-11-18 |
FR1114651A (en) | 1956-04-16 |
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