US925988A - Process of hardening tantalum. - Google Patents
Process of hardening tantalum. Download PDFInfo
- Publication number
- US925988A US925988A US42235408A US1908422354A US925988A US 925988 A US925988 A US 925988A US 42235408 A US42235408 A US 42235408A US 1908422354 A US1908422354 A US 1908422354A US 925988 A US925988 A US 925988A
- Authority
- US
- United States
- Prior art keywords
- hardening
- tantalum
- per cent
- cent
- silicium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S76/00—Metal tools and implements, making
- Y10S76/11—Tungsten and tungsten carbide
Definitions
- the subject-matter of the present invention is a process for hardening tantalum.
- silicium is employed" as hardening agent. It has been found that siliciuni has the best hardenlng action when it is employed in quantities between 1 per cent. and 10 er cent. of the ened, because'the hardening action of silici um increases considerably when'the addition is increased above 1 per cent,1without the'other good properties of the metal, par.- ticularly its ductility, being im aired to any extent, worth men'tloning.
- the herein described process for hardening tantalum which consists in adding to tantalum less than 10 per cent. and more. than 1 per cent. of'silicium.
Description
UNITED STATES: PATENT OFFICE.
WERNER VON BOLTON, 0F cRARLoTq BuRc, GE MANY, ASSIGNOR T0 SIEMENS & HA'LSKE'A; G., OF BERLIN, GERMANY, A CORPORATION or GERMANY.
PROCESS OF HARDENING TANTALUH.
Specification of Letters Patent.
Patented June 22, 1909.
To all whom it may concern: Be it known that I, WERN R VON BOLTON, a subject of the Czar of Russia, and residing at Charlottenburg, near Berlin, Germany, have invented a certain new and useful Process for Hardening Tantalum, of which the following is a specification.
1 The subject-matter of the present invention is a process for hardening tantalum.
In accordance with the invention, silicium is employed" as hardening agent. It has been found that siliciuni has the best hardenlng action when it is employed in quantities between 1 per cent. and 10 er cent. of the ened, because'the hardening action of silici um increases considerably when'the addition is increased above 1 per cent,1without the'other good properties of the metal, par.- ticularly its ductility, being im aired to any extent, worth men'tloning.
is to be har- 1th additions of 2 per cent. to 3 'per cent. of silicium, for ex-; A
ample, a material having reat ductility and considerable hardness is o tained. As cow pared'with an addition of 3 lper cent. an addition of 5 er cent. only slig tly increases the hardness, ut the ductility is diminished.
WhatI claim as m invention and desire to secure by Letters atent is:-
1. The herein described process for hardening tantalum, which consists in adding to tantalum less than 10 per cent. and more. than 1 per cent. of'silicium.
2. The herein described process for hardening tantalum, which consists in adding to tantalum 3 per cent. of silicium.
In testimony whereof I have signed my name tothis specification in the'presence of two witnesses.
WERNER VON BOLTON.
Witnesses WOLDEMAR HAUPT, HENRY HABPER.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42235408A US925988A (en) | 1908-03-20 | 1908-03-20 | Process of hardening tantalum. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42235408A US925988A (en) | 1908-03-20 | 1908-03-20 | Process of hardening tantalum. |
Publications (1)
Publication Number | Publication Date |
---|---|
US925988A true US925988A (en) | 1909-06-22 |
Family
ID=2994415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US42235408A Expired - Lifetime US925988A (en) | 1908-03-20 | 1908-03-20 | Process of hardening tantalum. |
Country Status (1)
Country | Link |
---|---|
US (1) | US925988A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2438110A (en) * | 1943-07-28 | 1948-03-23 | Bell Telephone Labor Inc | Electrical translating materials and devices and method of making them |
US2438892A (en) * | 1943-07-28 | 1948-04-06 | Bell Telephone Labor Inc | Electrical translating materials and devices and methods of making them |
US2441603A (en) * | 1943-07-28 | 1948-05-18 | Bell Telephone Labor Inc | Electrical translating materials and method of making them |
US3790913A (en) * | 1973-04-02 | 1974-02-05 | F Peters | Thin film resistor comprising sputtered alloy of silicon and tantalum |
-
1908
- 1908-03-20 US US42235408A patent/US925988A/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2438110A (en) * | 1943-07-28 | 1948-03-23 | Bell Telephone Labor Inc | Electrical translating materials and devices and method of making them |
US2438892A (en) * | 1943-07-28 | 1948-04-06 | Bell Telephone Labor Inc | Electrical translating materials and devices and methods of making them |
US2441603A (en) * | 1943-07-28 | 1948-05-18 | Bell Telephone Labor Inc | Electrical translating materials and method of making them |
US3790913A (en) * | 1973-04-02 | 1974-02-05 | F Peters | Thin film resistor comprising sputtered alloy of silicon and tantalum |
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