GB2625643A - Buried power rail for semiconductors - Google Patents

Buried power rail for semiconductors Download PDF

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Publication number
GB2625643A
GB2625643A GB2318213.2A GB202318213A GB2625643A GB 2625643 A GB2625643 A GB 2625643A GB 202318213 A GB202318213 A GB 202318213A GB 2625643 A GB2625643 A GB 2625643A
Authority
GB
United Kingdom
Prior art keywords
power rail
bpr
contact
thickness
mol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB2318213.2A
Other languages
English (en)
Other versions
GB202318213D0 (en
Inventor
Cheng Kangguo
Frougier Julien
Xie Ruilong
Park Chanro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB202318213D0 publication Critical patent/GB202318213D0/en
Publication of GB2625643A publication Critical patent/GB2625643A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H10W20/0696—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs by using sacrificial placeholders, e.g. using sacrificial plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/481—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes on the rear surfaces of the wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6219—Fin field-effect transistors [FinFET] characterised by the source or drain electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB2318213.2A 2021-09-14 2022-09-07 Buried power rail for semiconductors Pending GB2625643A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/474,271 US20230083432A1 (en) 2021-09-14 2021-09-14 Buried power rail for semiconductors
PCT/CN2022/117553 WO2023040722A1 (en) 2021-09-14 2022-09-07 Buried power rail for semiconductors

Publications (2)

Publication Number Publication Date
GB202318213D0 GB202318213D0 (en) 2024-01-10
GB2625643A true GB2625643A (en) 2024-06-26

Family

ID=85478565

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2318213.2A Pending GB2625643A (en) 2021-09-14 2022-09-07 Buried power rail for semiconductors

Country Status (6)

Country Link
US (1) US20230083432A1 (https=)
JP (1) JP2024533115A (https=)
CN (1) CN117941054A (https=)
DE (1) DE112022003738T5 (https=)
GB (1) GB2625643A (https=)
WO (1) WO2023040722A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12588265B2 (en) 2023-08-10 2026-03-24 International Business Machines Corporation Semiconductor structure with enhanced placeholder position margin

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050023617A1 (en) * 2003-07-30 2005-02-03 Jean-Pierre Schoellkopf Conductive lines buried in insulating areas
CN110943080A (zh) * 2018-09-21 2020-03-31 三星电子株式会社 半导体器件
CN111106059A (zh) * 2018-10-26 2020-05-05 台湾积体电路制造股份有限公司 集成电路结构和形成集成电路结构的方法
US20200203210A1 (en) * 2018-12-20 2020-06-25 Imec Vzw Method for connecting a buried interconnect rail and a semiconductor fin in an integrated circuit chip
US20200219813A1 (en) * 2019-01-04 2020-07-09 Globalfoundries Inc. Method of forming a buried interconnect and the resulting devices
US20200411436A1 (en) * 2019-06-27 2020-12-31 International Business Machines Corporation Buried power rail for transistor devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517736B2 (en) * 2006-02-15 2009-04-14 International Business Machines Corporation Structure and method of chemically formed anchored metallic vias
US10170413B2 (en) * 2016-11-28 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having buried metal line and fabrication method of the same
US10475692B2 (en) * 2017-04-07 2019-11-12 Globalfoundries Inc. Self aligned buried power rail
WO2019151024A1 (ja) * 2018-02-02 2019-08-08 東京エレクトロン株式会社 半導体装置及びその製造方法
CN111699550B (zh) * 2018-03-19 2023-05-09 东京毅力科创株式会社 三维器件及其形成方法
US10685865B2 (en) * 2018-07-17 2020-06-16 Varian Semiconductor Equipment Associates, Inc. Method and device for power rail in a fin type field effect transistor
EP3840054B1 (en) * 2019-12-20 2023-07-05 Imec VZW Self-aligned contacts for walled nanosheet and forksheet field effect transistor devices
US20220020665A1 (en) * 2020-07-14 2022-01-20 Qualcomm Incorporated Double-side back-end-of-line metallization for pseudo through-silicon via integration
CN114512453B (zh) * 2020-11-17 2025-08-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050023617A1 (en) * 2003-07-30 2005-02-03 Jean-Pierre Schoellkopf Conductive lines buried in insulating areas
CN110943080A (zh) * 2018-09-21 2020-03-31 三星电子株式会社 半导体器件
CN111106059A (zh) * 2018-10-26 2020-05-05 台湾积体电路制造股份有限公司 集成电路结构和形成集成电路结构的方法
US20200203210A1 (en) * 2018-12-20 2020-06-25 Imec Vzw Method for connecting a buried interconnect rail and a semiconductor fin in an integrated circuit chip
US20200219813A1 (en) * 2019-01-04 2020-07-09 Globalfoundries Inc. Method of forming a buried interconnect and the resulting devices
US20200411436A1 (en) * 2019-06-27 2020-12-31 International Business Machines Corporation Buried power rail for transistor devices

Also Published As

Publication number Publication date
US20230083432A1 (en) 2023-03-16
DE112022003738T5 (de) 2024-05-16
CN117941054A (zh) 2024-04-26
WO2023040722A1 (en) 2023-03-23
JP2024533115A (ja) 2024-09-12
GB202318213D0 (en) 2024-01-10

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