GB2613061B - Photoelectric Conversion Apparatus - Google Patents

Photoelectric Conversion Apparatus

Info

Publication number
GB2613061B
GB2613061B GB2213740.0A GB202213740A GB2613061B GB 2613061 B GB2613061 B GB 2613061B GB 202213740 A GB202213740 A GB 202213740A GB 2613061 B GB2613061 B GB 2613061B
Authority
GB
United Kingdom
Prior art keywords
photoelectric conversion
conversion apparatus
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2213740.0A
Other languages
English (en)
Other versions
GB2613061A (en
GB202213740D0 (en
Inventor
Morimoto Kazuhiro
Iwata Junji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB202213740D0 publication Critical patent/GB202213740D0/en
Publication of GB2613061A publication Critical patent/GB2613061A/en
Application granted granted Critical
Publication of GB2613061B publication Critical patent/GB2613061B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
GB2213740.0A 2021-09-22 2022-09-20 Photoelectric Conversion Apparatus Active GB2613061B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021154432A JP7467401B2 (ja) 2021-09-22 2021-09-22 光電変換装置

Publications (3)

Publication Number Publication Date
GB202213740D0 GB202213740D0 (en) 2022-11-02
GB2613061A GB2613061A (en) 2023-05-24
GB2613061B true GB2613061B (en) 2026-04-29

Family

ID=84817854

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2213740.0A Active GB2613061B (en) 2021-09-22 2022-09-20 Photoelectric Conversion Apparatus

Country Status (7)

Country Link
US (1) US20230097091A1 (https=)
JP (2) JP7467401B2 (https=)
KR (1) KR102857373B1 (https=)
CN (1) CN115911068A (https=)
DE (1) DE102022124035A1 (https=)
GB (1) GB2613061B (https=)
TW (1) TWI901903B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022083067A (ja) * 2020-11-24 2022-06-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および撮像装置、並びに電子機器
JP7467401B2 (ja) * 2021-09-22 2024-04-15 キヤノン株式会社 光電変換装置
JP7799488B2 (ja) * 2022-01-01 2026-01-15 キヤノン株式会社 光電変換装置、光電変換システム、および機器
CN117690986B (zh) * 2024-02-01 2024-05-03 云南大学 高温工作单光子探测器、单光子焦平面探测器及制备方法
US12324252B1 (en) * 2024-04-29 2025-06-03 Globalfoundries Singapore Pte. Ltd. Structures including a photodetector and multiple cathode contacts

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111682039B (zh) 2016-09-23 2021-08-03 苹果公司 堆叠式背面照明spad阵列
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
JP6932580B2 (ja) 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
US10854658B2 (en) * 2018-07-16 2020-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with sidewall protection and method of making same
JP7242234B2 (ja) * 2018-09-28 2023-03-20 キヤノン株式会社 光検出装置、光検出システム
JP2020149987A (ja) * 2019-03-11 2020-09-17 ソニーセミコンダクタソリューションズ株式会社 光検出器
CN113383431B (zh) * 2019-03-19 2025-01-17 索尼半导体解决方案公司 传感器芯片、电子设备和测距装置
JP2020161716A (ja) * 2019-03-27 2020-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
CN117080233A (zh) * 2019-03-29 2023-11-17 索尼半导体解决方案公司 固态摄像装置和电子设备
JP7445397B2 (ja) * 2019-07-31 2024-03-07 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器
TWI867078B (zh) * 2019-11-19 2024-12-21 日商索尼半導體解決方案公司 固態攝像裝置及電子機器
JP2022096830A (ja) * 2020-12-18 2022-06-30 ソニーセミコンダクタソリューションズ株式会社 光検出器および電子機器
JP2022113371A (ja) * 2021-01-25 2022-08-04 ソニーセミコンダクタソリューションズ株式会社 光検出装置
JP2023002152A (ja) * 2021-06-22 2023-01-10 キヤノン株式会社 光電変換装置、光電変換装置の製造方法
JP7467401B2 (ja) * 2021-09-22 2024-04-15 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
JP7467401B2 (ja) 2024-04-15
JP2023045838A (ja) 2023-04-03
US20230097091A1 (en) 2023-03-30
TWI901903B (zh) 2025-10-21
KR102857373B1 (ko) 2025-09-11
GB2613061A (en) 2023-05-24
CN115911068A (zh) 2023-04-04
GB202213740D0 (en) 2022-11-02
TW202315105A (zh) 2023-04-01
KR20230042641A (ko) 2023-03-29
DE102022124035A1 (de) 2023-03-23
JP2024083450A (ja) 2024-06-21

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