GB2493274A - Electron beam evaporation apparatus - Google Patents

Electron beam evaporation apparatus Download PDF

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Publication number
GB2493274A
GB2493274A GB201213068A GB201213068A GB2493274A GB 2493274 A GB2493274 A GB 2493274A GB 201213068 A GB201213068 A GB 201213068A GB 201213068 A GB201213068 A GB 201213068A GB 2493274 A GB2493274 A GB 2493274A
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United Kingdom
Prior art keywords
text
electron
source material
beam evaporation
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
GB201213068A
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GB201213068D0 (en
Inventor
Yongbing Xu
Iain Will
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BOSTECH Ltd
Original Assignee
BOSTECH Ltd
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Filing date
Publication date
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Publication of GB201213068D0 publication Critical patent/GB201213068D0/en
Publication of GB2493274A publication Critical patent/GB2493274A/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An electron beam evaporation apparatus 10 comprises a source material feeder 12 for feeding a source material 14, an electron beam evaporation source 16 for evaporating a source material, means for generating an emission current between the electron beam evaporation source and a source material, an actuator 28 for moving the source material feeder in a linear direction and a controller 32 operable to control the deposition of the source material relative to characteristics of an electron beam and measurements of the emission current. The controller may further comprise an electron beam feedback loop, an emission current feedback loop or both 54. Also disclosed is a method of evaporating material onto a surface comprising the steps of providing a source material feeder, an electron beam evaporation source, means for generating an emission current, an actuator and a controller, measuring the emission current and a beam current, inputting the measurements into the controller and controlling the linear position of the source material feeder relative to the measured currents.

Description

ELECTRON BEAM EVAPORATION APPARATUS
FIELD OF THE INVENTION
The present invention relates generally to electron-beam evaporation apparatus and more specifically to the preparation of materials and more particularly to the growth of single crystal high quality metallic thin films in an ultrahigh vacuum system, with applications including magnetic recording media, spintronic devices and semiconductor devices and so is of particular importance to the research environment, where it is important to control and characterise film structure very precisely and reproducibly.
BACKGROUND TO THE INVENTION
Metallic thin films are grown using an evaporator attached to an ultrahigh vacuum system when high quality film quality is required. The source martial, to be evaporated, is often in the form of a rod with a high positive voltage applied to it and is bombarded by electrons, generated thermionically from a filament forming an emission current. The electrons transfer their kinetic energy to the rod and boil off the source material. During film growth, the evaporator ejects a flux of atoms from the source material (at a very slow rate), through the vacuum, towards various substrates held on a manipulator ann. A proportion of the flux is ionized, producing a measurable beam current. The separation of the source material and filament increases as material is evaporated and conventional evaporators compensate for this by increasing either the high voltage on the source material, or filament current. This keeps the flux and growth rate constant by maintaining a constant electrostatic accelerating force between the source material and filament. There are disadvantages to these conventional techniques because there is a physical limit, beyond which the high voltage, or the filament current, cannot be increased. The growth conditions are very sensitive to the kinetic energies of the atoms, which in turn are very sensitive to small increases in the distance between the filament and source materials, which occur during film growth. Increasingly larger high voltages arc required to correct for small changes in the filament-source separation and are difficult to achieve practically for large separations. It is much more practical to control the filament-source separation, since this can be achieved more easily. However, this must be done to a high degree of certainty.
According to the present invention there is provided electron-beam evaporation apparatus comprising: a source material feeder, for feeding a source material; an electron-beam evaporation source, for evaporating a said source material; means for generating an emission current between the electron-beam evaporation source and the said source material, an actuator for moving the source material feeder in a linear direction, and a controller operable to control the deposition of the source material relative to characteristics of the electron beam and measurements of the emission current.
The controller advantageously comprises an electron beam feedback loop.
The controller advantageously comprises an emission current feedback ioop.
The electron beam evaporation apparatus advantageously further comprises a voltage source for applying a positive voltage to the said material source.
The electron beam evaporation apparatus advantageously further comprises a thickness rate-meter operable to measure the thickness of material deposited on a surface.
The position of the source material feeder is advantageously determined as a function of one or more of the electron emission current, the beam current and the thickness of deposited material.
The electron-beam evaporation apparatus advantageously comprises an ion collecting plate operable to measure at least a proportion of the beam current.
The ion collecting plate advantageously comprises an aperture.
A variable bias voltage is advantageously applied to the ion collecting plate.
The electron beam evaporation apparatus may further comprise a cooling jacket.
The cooling jacket may be a water cooling jacket.
The controller advantageously controls the position of the actuator, the applied voltage to the filament and the source material voltage.
The controller advantageously receives input signals indicative of the thickness deposited material and the beam current.
Also according to the present invention there is provided a method of evaporating material onto a surface, comprising the steps of: providing a source material feeder, for feeding a source material; providing an electron-beam evaporation source, for evaporating a said source material; providing means for generating an emission current between the electron-beam evaporation source and the said source material; providing an actuator for moving the source material feeder in a linear direction, and providing a controller; measuring the emission current and the beam current and inputting the measurements into the controller, controlling the linear position of the source material feeder relative to the measured emission current and the beam current.
The present invention is an automated electron-beam evaporator which enables film growth rate to be controlled precisely without the need for frequent source material replenishment, using the beam and emission current as feedback. The high voltage to the source material, filament current and the separation between the source material and filament is kept constant throughout the film growth. The source material is automatically advanced towards the filament when the emission current falls, by using a linear actuator to maintain the separation at a constant value. The key innovation of this evaporator is that all the parameters are kept constant for the constant growth rate by maintaining a contact distance between the source, the filament and the substrate during the growth. In conventional evaporators, the constant growth rate is achieved by adjusting various growth parameters including the high accelerating voltages and filament currents, and in such cases, the growth parameters have effectively been altered. The longer movable source material rod in the current invention results in longer growth runs between maintenance. Consequently, the associated vacuum system needs to be vented less often than for current evaporator designs, saving pump down time. It is thus possible to perform film growth runs without the need for constant manual adjustment of the source material position. This is achieved by using a programmable, automated electronic control system, The film growth rates can also be programmed into the control system allowing continuously variable growth rates to produce novel film structures.
The present invention will now be described with reference to the accompanying drawing, Figure 1, which is a schematic thawing of electron-beam evaporation apparatus according to the present invention.
Referring to Figure 1, there is provided electron beam evaporation apparatus 10 comprising a source material feeder 12 operable to feed a source material 14 into a desired position for evaporation, evaporation means 16, having conductor rods and a filament 18 supported and positioned to cause controlled evaporation of the source material 14. The apparatus 10 further comprises a shutter 20, an ion collector 22 and a thickness rate meter 24.
The source material 14 is an ingot-type rod 26.
The source material feeder 12 has an actuator 28 operable to move the rod 26 in a linear direction.
The apparatus has a water cooled jacket 30 to control the temperature of the electron beam evaporator. The source material 14, to be evaporated, is attached to the actuator 28, whereby the position of the source material is controlled by a controller 32 having a feedback system to maintain the optimum distance between the source material 14 and the filament 18 in order to obtain a constant thin film growth rate and growth conditions. The source material 14 has a positive voltage applied to it in order to attract electrons from the filament 18. In use, the filament 18 melts the source material 14, resulting in evaporation causing the generation of an electron beam 34. The heating is localised at the tip of the source material 14 so as to reduce out-gassing in adjacent areas. Excessive out-gassing would otherwise contaminate the vacuum chamber in which the apparatus is operable and reduce the quality of the film growth.
The source material 14 is driven or fed to the filament 18 by the linear actuator 28, controlled by feedback from the electron emission current (measured between the filament 18 and the source material 14), the measured current of the beam 34 and the rate of thickness of the film deposited on a surface from the beam 34. The rate of thickness of the deposited film is measured with the thickness rate-meter 24. The thickness and evaporation rate is monitored as a function of the beam current, emission current and integrated film thickness meter, values for which are programmed into software of the controller 32.
The ion collector 22 is a plate operable to measure the beam current. The ion collector 22 has a concentric aperture 36, which allows the majority of the evaporated source material 14 to reach the target substrate surface, but collects a proportion of the ionised beam 34, which is used to measure the beam current. This process is enhanced by the applying a variable bias voltage to the ion collector 22 to attract the ions thereto.
The shutter 20 is controlled externally by the controller 32. The shutter 20 is operable to cover the beam 34 to stop film growth and has an aperture through which the evaporator material passes (i.e. beam) during film growth, when the shutter 20 is open.
The shutter 20 incorporates crystal rate-mater which is used to set the evaporation rate in the closed position, prior to evaporation. The rate-meter 24 lies to one side of the shutter aperture. Furthermore, the controller 32 records the prevailing beam current and emissions current when the shutter 20 is closed and these values are equated with the prevailing evaporation rate and subsequently used to control the evaporation rate when the shutter 20 is opened.
The shutter 20 also prevents extraneous charged particles, from the vacuum chamber, in which the apparatus 10 is operable, reaching the ion collecting plate 22, which would otherwise create noise and hamper the reading of the beam current.
A weaker beam current can be averaged over time and compared with the larger emission current. The latter is used to control the position of the source material 14 dynamically throughout film growth. If the emission current falls, the distance between the source material 14 and the filament 18 is reduced via the linear actuator 28. The shutter 20 closes to re-establish the evaporation rate if the initial ratio between the beam and emission current changes. The new beam and emission currents are then recorded and used to control the evaporation rate when the shutter 20 reopens. In this manner, one can be sure that the emission current truly corresponds to a particular evaporation rate, the latter being a function of the beam current.
The controller 32 monitors and controls the high voltage applied to the source material 14, the current to the filament 18 and the emission and beam currents.
Through software, the controller 32 also controls the duration of the evaporation, the evaporation rate and thickness. It is also possible to program the software for different source materials. These parameters are controlled to optimise the film growth conditions. The controller 32 is operable to sense deviations from the optimal emission and beam currents and performs corrective adjustments; this may occur immediately, or after a short dwell time (if the emission falls suddenly and excessively due to the source material overheating and melting away).
The controller 32 comprises a control unit 38 operable to process input signals and generate output signals in order to control the growth of the film.
The beam current is measured at the collector 20. The beam current signal is then amplified using an amplifier 40, then passed through an analogue filter 42 and then converted from an analogue signal to a digital signal using an AID convertor 44 before being inputted into the control unit 38.
The emission is fed back to the control unit 38 through an emission feedback controller 46.
The rate of thickness of growth of the deposited material is monitored using a thickness monitor 48 and inputted into the control unit 38.
The control unit 38 monitors all the inputs and controls the growth of the deposited material through outputting control of the voltage applied to the source material 14, through a high power voltage supply controller 50, the position of the source material relative to the filament, through a feedback loop 54 and a stepper motor 56 for controlling the actuator 28, and a filament power supply 58, for controlling the power applied to the filament 18.
The apparatus 10 is particularly advantageous as it has a very low out-gassing rate making it suitable for ultrahigh vacuum (IJHV) applications. This is achieved using the water cooled jacket 30 surrounding the filament and source material. All materials are UIIV compatible.
The device has mechanical guides to maintain the concentricity of the source material 14 relative to the long axis of the evaporator when being re-positioned by the linear actuator 28. This is to maintain the relative source/filament separation in the plane normal to the long axis of the evaporator.
It will be appreciated that although the present invention has been described above has having an actuator 28 operable to move the source material 14 into a position for evaporation, the positions of the source material 14 and element 18 are relative.
Accordingly, it will be appreciated that the present invention also extends to an embodiment wherein the position of both a source material and a filament may be controlled by an actuator or, alternatively only the position of the filament is controlled by an actuator.

Claims (1)

  1. <claim-text>SCLAIMS1. Electron-beam evaporation apparatus comprising: a source material feeder, for feeding a source material; an electron-beam evaporation source, for evaporating a said source material; means for generating an emission current between the electron-beam evaporation source and the said source material, an actuator for moving the source material feeder in a linear direction, and a controller operable to control the deposition of the source material relative to characteristics of the electron beam and measurements of the emission current.</claim-text> <claim-text>2. Electron-beam evaporation apparatus as claimed in claim 1, wherein the controller comprises an electron beam feedback loop.</claim-text> <claim-text>3. Electron beam evaporation apparatus as claimed in claim 1 or 2, wherein the controller comprises an emission current feedback loop.</claim-text> <claim-text>4. Electron beam evaporation apparatus as claimed in any of the preceding claims wherein comprising a voltage source for applying a positive voltage to the said material source.</claim-text> <claim-text>5. Electron-beam evaporation apparatus as claimed in any of the preceding claims comprising a thickness rate-meter operable to measure the thickness of material deposited on a surface.</claim-text> <claim-text>6. Electron-beam evaporation apparatus as claimed in any of the preceding claims, wherein the position of the source material feeder is determined as a function of one or more of the electron emission current, the beam current and the thickness of deposited material.</claim-text> <claim-text>7. Electron-beam evaporation apparatus as claimed in any of the preceding claims, comprising an ion collecting plate operable to measure at least a proportion of the beam current.</claim-text> <claim-text>8. Electron-beam evaporation apparatus as claimed in claim 7, wherein the ion collecting plate comprises an aperture.</claim-text> <claim-text>9. Electron-beam evaporation apparatus as claimed in claim 7 or 8, wherein a variable bias voltage is applied to the ion collecting plate.</claim-text> <claim-text>10. Electron beam evaporation apparatus as claimed in any of the preceding claims, comprising a cooling jacket.</claim-text> <claim-text>11. Electron-beam evaporation apparatus as claimed in claim 10, wherein the cooling jacket is a water cooling jacket.</claim-text> <claim-text>12. Electron-beam evaporation apparatus as claimed in any of the preceding claims, wherein the controller controls the position of the actuator, the applied voltage to the filament and the source material voltage.</claim-text> <claim-text>13. Electron-beam evaporation apparatus as claimed in any of the preceding claims, wherein the controller receives input signals indicative of the thickness deposited material and the beam current.</claim-text> <claim-text>14. A method of evaporating material onto a surface, comprising the steps of: providing a source material feeder, for feeding a source material; providing an electron-beam evaporation source, for evaporating a said source material; providing means for generating an emission current between the electron-beam evaporation source and the said source material; providing an actuator for moving the source material feeder in a linear direction, and providing a controller; measuring the emission current and the beam current and inputting the measurements into the controller, controlling the linear position of the source material feeder relative to the measured emission current and the beam current.</claim-text>
GB201213068A 2011-07-23 2012-07-23 Electron beam evaporation apparatus Withdrawn GB2493274A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB201112776A GB201112776D0 (en) 2011-07-23 2011-07-23 An electron beam evaporator

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GB201213068D0 GB201213068D0 (en) 2012-09-05
GB2493274A true GB2493274A (en) 2013-01-30

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GB201213068A Withdrawn GB2493274A (en) 2011-07-23 2012-07-23 Electron beam evaporation apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015033713A1 (en) * 2013-09-05 2015-03-12 株式会社村田製作所 Film-formation device
CN105714252B (en) * 2016-04-28 2018-09-28 中国工程物理研究院激光聚变研究中心 A kind of optical thin film deposition scan control method and system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2650215A1 (en) * 1976-11-02 1978-05-11 G F Paul Dipl Phys Dr Mueller Vacuum vapour deposition appts. - in which material being evaporated can be rotated and moved axially for uniform evapn. by electron beam
JPH05186869A (en) * 1992-01-10 1993-07-27 Ulvac Japan Ltd Method and device for forming sendust film
US5296274A (en) * 1989-05-10 1994-03-22 Movchan Boris A Method of producing carbon-containing materials by electron beam vacuum evaporation of graphite and subsequent condensation
JP2001059163A (en) * 1999-08-24 2001-03-06 Toray Ind Inc Vapor deposition device and production of thin film
EP1806424A1 (en) * 2006-01-10 2007-07-11 General Electric Company Physical vapor deposition process and apparatus therefor

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Publication number Priority date Publication date Assignee Title
US4368689A (en) * 1980-12-29 1983-01-18 Rockwell International Corporation Beam source for deposition of thin film alloys
CA2237534A1 (en) * 1997-06-23 1998-12-23 P.A. Joel Smith Rod-fed source pool height monitor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2650215A1 (en) * 1976-11-02 1978-05-11 G F Paul Dipl Phys Dr Mueller Vacuum vapour deposition appts. - in which material being evaporated can be rotated and moved axially for uniform evapn. by electron beam
US5296274A (en) * 1989-05-10 1994-03-22 Movchan Boris A Method of producing carbon-containing materials by electron beam vacuum evaporation of graphite and subsequent condensation
JPH05186869A (en) * 1992-01-10 1993-07-27 Ulvac Japan Ltd Method and device for forming sendust film
JP2001059163A (en) * 1999-08-24 2001-03-06 Toray Ind Inc Vapor deposition device and production of thin film
EP1806424A1 (en) * 2006-01-10 2007-07-11 General Electric Company Physical vapor deposition process and apparatus therefor

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WO2013014410A1 (en) 2013-01-31
GB201213068D0 (en) 2012-09-05
GB201112776D0 (en) 2011-09-07

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