CN105714252B - A kind of optical thin film deposition scan control method and system - Google Patents

A kind of optical thin film deposition scan control method and system Download PDF

Info

Publication number
CN105714252B
CN105714252B CN201610272054.2A CN201610272054A CN105714252B CN 105714252 B CN105714252 B CN 105714252B CN 201610272054 A CN201610272054 A CN 201610272054A CN 105714252 B CN105714252 B CN 105714252B
Authority
CN
China
Prior art keywords
scanning
electron beam
hot spot
crucible
coating materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610272054.2A
Other languages
Chinese (zh)
Other versions
CN105714252A (en
Inventor
王震
张清华
吴倩
罗晋
卫耀伟
潘峰
唐明
刘志超
郑轶
李树刚
张哲�
欧阳升
汤鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laser Fusion Research Center China Academy of Engineering Physics
Original Assignee
Laser Fusion Research Center China Academy of Engineering Physics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laser Fusion Research Center China Academy of Engineering Physics filed Critical Laser Fusion Research Center China Academy of Engineering Physics
Priority to CN201610272054.2A priority Critical patent/CN105714252B/en
Publication of CN105714252A publication Critical patent/CN105714252A/en
Application granted granted Critical
Publication of CN105714252B publication Critical patent/CN105714252B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/543Controlling the film thickness or evaporation rate using measurement on the vapor source

Abstract

An embodiment of the present invention provides a kind of optical thin film deposition scan control method and systems, belong to optical thin film deposition scan control technical field.The method includes:The optical signal that photodetector is sent out when Coating Materials in collected default scanning area is melted or distilled under electron beam beam spot scans is converted into electric signal and is sent to data processing equipment;Scanning track of the electron beam hot spot that data processing equipment is sent out according to the electron gun of the electric signal optimization electron beam filming equipment received in crucible;Electron beam filming equipment controls electron beam hot spot with the scanning track scanning Coating Materials after optimization in crucible, so that Coating Materials evaporates or distils and be deposited on element surface to be plated.The embodiment of the present invention is effectively improved the stability of Coating Materials evaporation rate and the surface smoothness of Coating Materials after the completion of scanning, optimizes and revises method relative to existing empirical formula, controllability is more preferable, more efficient.

Description

A kind of optical thin film deposition scan control method and system
Technical field
The present invention relates to optical thin films to deposit scan control technical field, is deposited in particular to a kind of optical thin film Scan control method and system.
Background technology
In optical thin film deposition precision sweep control technical study field, the coating quality of optical element is to laser aid Operation plays a crucial role.The quality of quality of forming film is heavily dependent on the control essence of thin film evaporation stability Degree.Evaporation stability influences to include mainly two aspects of both macro and micro caused by film quality.It is macroscopically main to influence:It steams Atmosphere of getting angry is distributed (i.e. film thickness uniformity);Tooling values (i.e. centre wavelength is drifted about);Film thickness monitoring precision (i.e. membrane system effect). Concentrated expression is the spectral target of film.Microcosmic aspect mainly influences film microstructure, as lattice missing, vacancy, pore size, Porosity, plethora defect etc..Concentrated expression is the antibody Monoclonal threshold value of film.Therefore, in order to improve the deposition quality of optical thin film, Improving the stability of Coating Materials evaporation rate is particularly important.
In existing electron beam plated film scan control technology, the empirical method of adjustment of generally use joins the scanning of electron beam Number, such as scan path optimize adjustment, to improve the stability of Coating Materials evaporation rate.However, empirical adjustment side That there is optimization process is uncontrollable for method, and effect of optimization varies with each individual, and the optimization time is longer, and the reproducibility of optimum results is poor etc. Problem.
Invention content
The purpose of the present invention is to provide a kind of optical thin film deposition scan control method and systems, can effectively improve The above problem.
To achieve the goals above, technical solution used in the embodiment of the present invention is as follows:
An embodiment of the present invention provides a kind of optical thin films to deposit scan control method, is applied to optical thin film deposition scanning Control system.The method includes:Photodetector is by Coating Materials in collected default scanning area in electron beam hot spot The optical signal sent out when the lower fusing of scanning or distillation is converted into electric signal and is sent to data processing equipment;Data processing equipment according to Scanning rail of the electron beam hot spot that the electron gun of the electric signal optimization electron beam filming equipment received is sent out in crucible Mark;The electron beam filming equipment controls electron beam hot spot and plates membrane material in the crucible with the scanning track scanning after optimization Material, so that the Coating Materials evaporates or distils and be deposited on element surface to be plated.
Further, the data processing equipment optimizes the electricity of electron beam filming equipment according to the electric signal received Before the step of scanning track of the electron beam hot spot that sub- rifle is sent out in crucible, the method further includes:The data processing Device sends out control instruction according to the electric signal received and adjusts magnetic field in the electron gun, corrects the electron gun hair The position of the electron beam hot spot gone out;The photodetector is by Coating Materials in collected default scanning area by hot spot The lower optical signal for melting or being sent out when distilling of electron beam effect after position correction is converted into electric signal and is sent at the data Manage device.
Further, the data processing equipment optimizes the electricity of electron beam filming equipment according to the electric signal received The step of scanning track of the electron beam hot spot that sub- rifle is sent out in crucible, including:The data processing equipment is according to receiving The electric signal obtain optical signal that the Coating Materials in default scanning area generates under the electron beam beam spot scans Energy distribution;Scanning patter is set according to the Energy distribution of the optical signal, wherein the scanning patter includes multiple scannings The hot spot residence time of each scanning element is arranged in point;It is swept according to the scanning patter and preset electron beam hot spot It retouches position model and obtains scanning track of the electron beam hot spot in the crucible in the default scan period;According to described default After scanning track of the electron beam hot spot in the crucible adjusts the scanning patter to be optimized in scan period Scan track.
Further, the electron beam beam spot scans position model is:
Wherein, R is the length of electron beam scanned straight lines section, and Δ S is the length of current time electron beam beam spot scans track, K is positive integer, and T is the electron beam scan period, and ω is the angular speed of crucible rotation.
Further, the scanning patter includes multiple sub- scanning areas, and the electron beam hot spot is successively to each institute Sub- scanning area is stated to be scanned, each described sub- scanning area include obtained according to the Energy distribution of the optical signal it is more A scanning element.
Further, the multiple scanning element that the scanning patter includes is distributed as raster scanning distribution.
Further, the photodetector sweeps Coating Materials in collected default scanning area in electron beam hot spot It describes the optical signal sent out when fusing or distillation and is converted into the step of electric signal is sent to data processing equipment, including:It is described pre- The optical signal sent out when if the Coating Materials in scanning area is by the fusing under the electronics beam scanning or distillation is sent to band logical Filter;The photodetector receives the optical signal through the bandpass filter and converts the optical signal to electric signal It is sent to the data processing equipment.
The embodiment of the present invention additionally provides a kind of optical thin film deposition scanning control system, including crucible, electron beam plated film Equipment, photodetector and data processing equipment.The photodetector is used to acquire the plated film in default scanning area The optical signal that material is sent out when melting or distil under electronics beam scanning, and convert the optical signal to electric signal and be sent to institute State data processing equipment.The data processing equipment is used to optimize the electron beam plated film according to the electric signal received and set Scanning track of the electron beam hot spot that standby electron gun is sent out in the crucible.The electron beam filming equipment is for controlling institute Electron beam hot spot is stated in the crucible with Coating Materials described in the scanning track scanning after optimization so that the Coating Materials steams Hair distils and is deposited on element surface to be plated.
Further, the optical thin film deposition scanning control system further includes bandpass filter, the bandpass filter Operating wavelength range be visible wavelength range, the Coating Materials in the default scanning area melts under the action of electron beam The optical signal sent out in change or sublimation process is incident on the photodetector by the bandpass filter.
Further, the photodetector is CCD imager part.
Optical thin film provided in an embodiment of the present invention deposits scan control method, by collected to photodetector institute Coating Materials in default scanning area melt under the action of electron beam or sublimation process in the intensity of optical signal that sends out divide Cloth is analyzed, and electron beam scanning patter is arranged, and then realizes the optimization of scanning track of the electron beam hot spot in crucible, not only The stability for being conducive to improve the evaporation rate of Coating Materials in default scanning area also advantageously improves Coating Materials after scanning Surface smoothness, i.e., the fusing uniformity of Coating Materials Z-direction in crucible, wherein Z-direction is the Coating Materials in crucible Depth direction, and then improve the quality of optical thin film deposition.Pass through experience adjustments electron beam beam spot scans rail relative to existing The method of mark, using optical thin film provided in an embodiment of the present invention deposit scan control method to electron beam hot spot in crucible The controllability that scanning track optimizes adjustment is more preferable, more efficient.
Other features and advantages of the present invention will be illustrated in subsequent specification, also, partly be become from specification It is clear that being understood by implementing the embodiment of the present invention.The purpose of the present invention and other advantages can be by being write Specifically noted structure is realized and is obtained in specification, claims and attached drawing.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the structural schematic diagram that a kind of optical thin film that first embodiment of the invention provides scans Deposition Control Systems;
Fig. 2 is the flow chart that a kind of optical thin film that second embodiment of the invention provides deposits scan control method;
Fig. 3 is the flow chart that another optical thin film that second embodiment of the invention provides deposits scan control method;
Fig. 4 is the schematic diagram of the first sub- scanning area in the combined type scan mode that second embodiment of the invention provides;
Fig. 5 is the schematic diagram of the second sub- scanning area in the combined type scan mode that second embodiment of the invention provides;
Fig. 6 is the schematic diagram of the sub- scanning area of third in the combined type scan mode that second embodiment of the invention provides;
Fig. 7 is the schematic diagram of scanning patter in the combined type scan mode that second embodiment of the invention provides;
Fig. 8 is the schematic diagram of scanning patter in the raster scanning mode that second embodiment of the invention provides;
Fig. 9 is the schematic diagram of the scanning track in the first scan period that second embodiment of the invention provides;
Figure 10 is the schematic diagram of the scanning track in the second scan period that second embodiment of the invention provides;
Figure 11 is the schematic diagram of the scanning track in the third scan period that second embodiment of the invention provides;
Figure 12 is the schematic diagram for the preset electron beam beam spot scans position model that second embodiment of the invention provides.
In figure, reference numeral is respectively:
Crucible 101;Coating Materials 102;Electron gun 103;Bandpass filter 104;Photodetector 105;Data processing fills Set 106;Default scanning area 200;Default point 210;First scanning track 301;Second scanning track 302;Third scans rail Mark 303.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented The component of example can be arranged and be designed with a variety of different configurations.
Therefore, below the detailed description of the embodiment of the present invention to providing in the accompanying drawings be not intended to limit it is claimed The scope of the present invention, but be merely representative of the present invention selected embodiment.Based on the embodiments of the present invention, this field is common The every other embodiment that technical staff is obtained without creative efforts belongs to the model that the present invention protects It encloses.
It should be noted that:Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi It is defined, then it further need not be defined and explained in subsequent attached drawing in a attached drawing.
In the description of the present invention, it should be noted that the orientation or position of the instructions such as term "center", "upper", "lower" Relationship be based on the orientation or positional relationship shown in the drawings or the invention product using when the orientation or position usually put Relationship is merely for convenience of description of the present invention and simplification of the description, and not indicating or implying the indicated device or element must have There is specific orientation, with specific azimuth configuration and operation, therefore is not considered as limiting the invention.In addition, term " the One ", " second ", " third " etc. are only used for distinguishing description, are not understood to indicate or imply relative importance.
In addition, the terms such as term "horizontal", " vertical " are not offered as requiring component abswolute level or vertical, but can be slightly Low dip.It is not to indicate that the structure has been had to if "horizontal" refers to only that its direction is more horizontal with respect to for "vertical" It is complete horizontal, but can be slightly tilted.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ", " coupling " shall be understood in a broad sense, for example, coupling can be direct-coupling, can also pass through intermediary INDIRECT COUPLING, Ke Yishi Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition Concrete meaning in invention.
In existing electron beam plated film scan control technology, empirical method of adjustment is mostly used greatly to electron beam scan control Technological parameter, such as scan path, hot spot residence time etc. optimize adjustment, to improve the steady of Coating Materials evaporation rate It is qualitative.That there is optimization process is uncontrollable for this empirical method of adjustment, and effect of optimization varies with each individual, and the optimization time is longer, and The poor problem of the reproducibilities of optimum results.In consideration of it, an embodiment of the present invention provides a kind of optical thin films to deposit scan control System and applied to the system optical thin film deposit scan control method.
First embodiment
Fig. 1 is please referred to, optical thin film deposition scanning control system provided in an embodiment of the present invention includes crucible 101, electronics Beam filming equipment, photodetector 105 and data processing equipment 106.Crucible 101 is positioned over the vacuum chamber of electron beam filming equipment In, for being laid with Coating Materials 102.Photodetector 105 is coupled with data processing equipment 106.
It is exactly process that electronic kinetic energy is converted into thermal energy that the evaporation process of Coating Materials is practical.The electricity of electron beam filming equipment Sub- rifle 103 launches the electronics of high-speed motion, under the effect of contraction in magnetic field, with energy electron motion to the plated film in crucible 101 102 surface of material, a large amount of thermal energy are generated because of sharp impacts, are evaporated or are distilled after causing Coating Materials to reach fusing point.In plated film While material is melted or distilled, a large amount of light and heat, fusing or the more violent place that distils, the light and heat sent out can be sent out It also must be more.
Photodetector 105 is for when acquiring that Coating Materials is melted or distilled under electronics beam scanning in default scanning area The optical signal sent out, and convert the optical signal to electric signal and be sent in data processing equipment 106.Wherein, scanning is preset Region can be arranged according to the area of crucible and the control ability of electron gun.For example, can be according to the size of electron beam hot spot It is divided into multiple default points.It should be noted that the Coating Materials at each default point is made in electron beam hot spot The intensity distribution of optical signal sent out when with lower fusing or distillation reflects this and presets at point Coating Materials in electron beam light Actual evaporation intensity distribution under spot effect.The evaporation intensity of the higher position Coating Materials of light signal strength is bigger.This hair In bright embodiment, photodetector 105 can preferably use charge coupling device (Charge-coupled Device, CCD), It is of course also possible to use other photodetectors.
Data processing equipment 106 is used to be sent out according to the electron gun 103 of the electric signal optimization electron beam filming equipment received Scanning track of the electron beam hot spot gone out in crucible.Data processing equipment 106 handles the electric signal received, obtains The intensity distribution of the optical signal sent out when Coating Materials is melted or distilled under electron beam beam spot scans in default scanning area.
Hereafter, when can melt or distil under electronics beam scanning according to Coating Materials in acquired default scanning area Scanning patter is arranged in the intensity distribution of the optical signal sent out.Specifically, can be according in the default scanning area obtained in advance The intensity distribution situation for the optical signal that Coating Materials at each default point is sent out when melting or distil under electron beam effect, Scanning element is chosen from each default point, constitutes scanning patter.It should be noted that scanning patter includes multiple scanning elements, Choose the default point for preferentially selecting the strong area's area of hot spot larger when scanning element.Wherein, the strong area of the hot spot is light intensity in hot spot More than the region of the first intensity threshold, and first intensity threshold according to the Coating Materials at each default point in electron beam The intensity distribution setting of the optical signal sent out when the lower fusing of effect or distillation.Then each scanning element in scanning patter is set The time interval in electron beam scanning process between two neighboring scanning element is arranged in hot spot residence time.For example, can basis The second intensity threshold is arranged in the intensity distribution situation of the optical signal, increases the scanning element that light intensity is less than second intensity threshold Hot spot residence time, reduce intensity be more than second intensity threshold scanning element hot spot residence time, with improve scanning When crucible in Coating Materials evaporation rate stability and Coating Materials after scanning surface smoothness.
Scanning track of the electron beam hot spot in crucible after optimization can be determined according to scanning patter.Further, electric Beamlet filming equipment control electron beam hot spot is in crucible 101 with the scanning track scanning Coating Materials 102 after optimization so that institute It is deposited on element surface to be plated after stating the evaporation of Coating Materials 102 or distillation.
Further, since other stray lights are likely present in system, such as the self-luminous etc. in electron beam filming equipment.For Other stray lights are avoided to enter the optimization that photodetector 105 influences electron beam beam spot scans path as possible, as shown in Figure 1, Optical thin film deposition scanning control system provided in an embodiment of the present invention further includes bandpass filter 104.Bandpass filter 104 Operating wavelength range is visible wavelength range.When electron beam hot spot acts on the Coating Materials in default scanning area, plated film Material melts or sends out optical signal while distillation is incident on photodetector 105 through bandpass filter 104.
In conclusion the embodiment of the present invention is acquired using photodetector 105 presets each default point in scanning area The Coating Materials at place melted under the action of electron beam or sublimation process in the intensity distribution of optical signal that sends out, the light is believed Number foundation optimization electron beam hot spot scanning track crucible in of the intensity distribution as setting electron beam scanning patter, not only The stability for being conducive to improve the evaporation rate of Coating Materials in default scanning area also advantageously improves Coating Materials after scanning Surface smoothness, i.e., the fusing uniformity of Coating Materials Z-direction in crucible, wherein Z-direction is the Coating Materials in crucible Depth direction, and then improve the quality of optical thin film deposition.Pass through experience adjustments electron beam beam spot scans rail relative to existing The controllability of the method for mark, optical thin film deposition scanning control system provided in an embodiment of the present invention is more preferable, more efficient.
Second embodiment
An embodiment of the present invention provides a kind of optical thin films to deposit scan control method, is applied to above-mentioned optical thin film and deposits Scanning control system.The optical thin film deposition scanning control system includes crucible 101, electron beam filming equipment, photodetection Device 105 and data processing equipment 106.Crucible 101 is positioned in the vacuum chamber of electron beam filming equipment, for being laid with Coating Materials 102.Photodetector 105 is coupled with data processing equipment 106.As shown in Fig. 2, the optical thin film deposits scan control method Including:
Step S201:Photodetector 105 sweeps Coating Materials in collected default scanning area in electron beam hot spot The optical signal that sends out is converted into electric signal and is sent to data processing equipment 106 when describing fusing or distillation;
Wherein, default scanning area can be arranged according to the area of crucible 101 and the control ability of electron gun 103.Example Such as, multiple default points can be divided into according to the size of electron beam hot spot.Coating Materials is laid in crucible 101.Electricity Beamlet filming equipment control electron gun 103, which sends out electron beam hot spot and presets point to each, to be scanned, and scanning area is preset Coating Materials at interior each default point sends out optical signal while melting or distil under the effect of electron beam hot spot.Pass through light Electric explorer 105 can acquire the optical signal, and convert the optical signal to electric signal and be sent to data processing equipment 106.Wherein, photodetector 105 can preferably use charge coupling device (CCD), it is of course also possible to use other photoelectricity are visited Survey device 105.Data processing equipment 106 can be computer, can also be it is other have data processing function and store function Circuit module.
Step S202:Data processing equipment 106 optimizes the electron gun of electron beam filming equipment according to the electric signal received Scanning track of the 103 electron beam hot spots sent out in crucible 101;
Data processing equipment 106 handles the electric signal received, obtains Coating Materials in default scanning area and exists The intensity distribution of the optical signal sent out when melting or distil under electron beam beam spot scans.Hereafter, it can be preset according to acquired At each default point in scanning area Coating Materials electron beam effect under melt or distillation when send out optical signal it is strong Degree distribution setting scanning patter.Specifically, at can be according to each default point in the default scanning area obtained in advance The intensity distribution situation for the optical signal that Coating Materials is sent out when melting or distil under electron beam effect, from each default point Scanning element is chosen, scanning patter is constituted.It should be noted that scanning patter includes multiple scanning elements, choose preferential when scanning element The default point for selecting the strong area's area of hot spot larger.Wherein, the strong area of the hot spot is that light intensity is more than the first intensity threshold in hot spot Region, and first intensity threshold according to the Coating Materials at each default point electron beam effect under melt or distillation When send out optical signal intensity distribution setting.
Hereafter, the hot spot residence time of each scanning element in scanning patter is set, that is, is arranged in electron beam scanning process Time interval between two neighboring scanning element.For example, the last the second can be arranged according to the intensity distribution situation of the optical signal Threshold value is spent, the hot spot residence time that light intensity is less than the scanning element of second intensity threshold is increased, reduces intensity and is more than described the The hot spot residence time of the scanning element of two intensity thresholds, with improve scan when crucible 101 in Coating Materials evaporation rate it is steady The surface smoothness of Coating Materials after qualitative and scanning.The electron beam hot spot after optimization can be determined in earthenware according to scanning patter Scanning track in crucible 101.
Step S203:Electron beam filming equipment is controlled electron beam hot spot and is swept with the scanning track after optimization in crucible 101 Coating Materials is retouched, so that Coating Materials evaporates or distils and be deposited on element surface to be plated.
For electron beam filming equipment using electron-beam vapor deposition method plated film, electron-beam vapor deposition method is the one of vacuum vapor plating Kind, it is to directly heat Coating Materials using electron beam under vacuum, so that Coating Materials is gasified and transported to element to be plated, The method for forming film is condensed on element to be plated.When the rotating speed of crucible 101 determines, electron beam filming equipment can pass through control The hot spot residence time of scanning patter or scan path and each scanning element of the electron beam hot spot in default scanning area Control scanning track of the electron beam hot spot in crucible 101.
For example, the electron gun 103 of electron beam filming equipment be magnetic deflection gun 103, magnetic deflection gun 103 it is initial Distribution of Magnetic Field is bad, and practical electron beam facula position and theoretical coordinate position may be caused deviation occur.Therefore, the present invention is implemented In, before above-mentioned step S202, the optical thin film deposition scan control method further includes:106 basis of data processing equipment The electric signal received sends out the magnetic field in control instruction adjustment electron gun 103, the electron beam that correcting electronic rifle 103 is sent out The position of hot spot.Hereafter, photodetector 105 exists Coating Materials at each default point in collected default scanning area The lower optical signal for melting or being sent out when distilling of electron beam effect after facula position corrects is converted into electric signal and is sent to number According to processing unit 106.
Specifically, in the embodiment of the present invention, the specific implementation mode for the electron beam facula position that correcting electronic rifle 103 is sent out Can be:It chooses and presets multiple default points in scanning area as calibration points, photodetector 105 is by collected mark The optical signal that Coating Materials at fixed point position is sent out when melting or distil under electron beam beam spot scans is converted into electric signal transmission To data processing equipment 106.Data processing equipment 106 obtains presetting scanning area under original state according to the electric signal received The actual distribution situation for the optical signal that Coating Materials at interior calibration point is sent out when melting or distil under electron beam effect, The actual distribution situation of the optical signal is to reflect practical function position and the intensity distribution situation of electron beam spot.Wherein, The calibration point may include the default point at default scanning area center, and be with the central point for presetting scanning area In the rectangular coordinate system that origin is established, one or more presets for being chosen at equal intervals in the positive axis of reference axis and negative semiaxis Position, it is of course also possible to select other default points.Further, data processing equipment 106 is adopted according to photodetector 105 The facula position collected adjusts the Distribution of Magnetic Field of electron gun 103 relative to the offset of theoretical position so that the collected mark of institute Physical location and the theoretical position for pinpointing the hot spot at position coincide, to realize electron beam facula position that electron gun 103 is sent out Correction.
In order to advanced optimize scanning track of the electron beam hot spot in crucible 101, as shown in figure 3, the embodiment of the present invention Another optical thin film deposition scan control method is additionally provided, specifically includes step S301 to step S306.
Step S301:Photodetector 105 sweeps Coating Materials in collected default scanning area in electron beam hot spot The optical signal that sends out is converted into electric signal and is sent to data processing equipment 106 when describing fusing or distillation;
Step S302:Data processing equipment 106 obtains Coating Materials in default scanning area according to the electric signal received The Energy distribution of the optical signal generated under electron beam beam spot scans;
Wherein, electric signal is to be sent to data processing equipment 106 by photodetector 105.Default scanning area can root Multiple default points are divided into according to the size of electron beam hot spot, the Coating Materials at each default point is in electron beam light The intensity distribution of the optical signal sent out when the lower fusing of spot effect or distillation reflects this and presets at point Coating Materials in electronics Actual evaporation intensity distribution under Shu Zuoyong.The evaporation intensity of the higher position Coating Materials of light signal strength is bigger.
Step S303:According to the Energy distribution of the optical signal, scanning patter is set;
Specifically, can be according to the Coating Materials at each default point in the default scanning area obtained in advance in electricity The intensity distribution situation of the optical signal sent out when the lower fusing of beamlet effect or distillation, chooses scanning element from each default point, Constitute scanning patter.It should be noted that scanning patter includes multiple scanning elements, and preferentially select hot spot strong when selection scanning element The larger default point of area's area.The hot spot residence time of each scanning element in scanning patter is set, that is, electron beam is set and is swept Time interval during retouching between two neighboring scanning element.
Specifically, the electron beam hot spot that the electron gun 103 of electron beam filming equipment is sent out scans in default scanning area When, combined type scan mode may be used, raster scanning mode can also be used.Raster scanning mode has simple and practicable The advantages of, when 101 area of crucible is smaller and the hot spot focusing effect of electron gun 103 is preferable, it can preferentially use raster scanning Mode.And when 101 area of crucible is larger, the hot spot focusing effect of electron gun 103 is bad or the control ability of electron gun 103 is weaker When, combined type scan mode can be preferably used, to realize better scan control effect.
In the embodiment of the present invention, the specific implementation mode of combined type scan mode can be:According in default scanning area The intensity point for the optical signal that Coating Materials at each default point is sent out when melting or distil under the effect of electron beam hot spot Cloth, the adjacent default point of selected section form sub- scanning area as scanning element, and multiple sub- scanning areas can form one Complete scanning patter.In addition, the Coating Materials at each scanning element included by sub- scanning area is in electron beam light The light of each scanning element in sub- scanning area is arranged in the intensity distribution of the optical signal sent out when the lower fusing of spot effect or distillation Spot residence time.For example, the second intensity threshold can be arranged according to the intensity distribution situation of the optical signal, increases light intensity and be less than The hot spot residence time of the scanning element of second intensity threshold, reduction intensity are more than the scanning element of second intensity threshold Hot spot residence time plates membrane material in crucible 101 when being scanned to improve after the stability of the evaporation rate of Coating Materials and scanning The surface smoothness of material.Hereafter, control electron beam hot spot is successively scanned sub- scanning area described in each.
For example, as shown in figure 4, relatively large border circular areas indicates to preset scanning area 200, default scanning area 200 Interior relatively small circle indicates to preset point 210, wherein sets hypographous roundlet and indicates scanning element.Using combined type scanning side When formula carries out electronics beam scanning, the first sub- scanning area of multiple scanning elements composition that scanning patter can be as shown in Figure 4, Fig. 5 Shown in multiple scanning elements composition the second sub- scanning area and multiple scanning element compositions shown in fig. 6 the sub- scanning area of third It is composed, as shown in Figure 7.
The specific implementation mode of raster scanning mode can be:According to each default point in default scanning area 200 The intensity distribution for the optical signal that Coating Materials at 210 is sent out when melting or distil under the effect of electron beam hot spot, selects more A default point 210 is used as scanning element, forms scanning patter, and the hot spot residence time of each scanning element is arranged.Scanning figure The distribution mode of multiple scanning elements included by shape is distributed for raster scanning.The raster scanning distribution can be default sweeps Retouch the scanning element of the preset quantity being distributed in the radial direction in region 200 along crucible 101, and the scanning of raster scanning mode Path is the radial direction point by point scanning along crucible 101.For example, as shown in figure 8, scanning patter includes N1~N11、M1~M9, altogether 20 scanning elements, and the scan path in a scan period is from N1Point by point scanning is to N11, then from M9Point by point scanning is to M1
Step S304:The default scan period is obtained according to scanning patter and preset electron beam beam spot scans position model Scanning track of the interior electron beam hot spot in crucible 101;
Step S305:Scanning figure is adjusted according to scanning track of the electron beam hot spot in the default scan period in crucible 101 Shape is with the scanning track after being optimized.
It, can be according to the scanning figure obtained in order to advanced optimize scanning track of the electron beam hot spot in crucible 101 Shape and preset electron beam beam spot scans position model, which calculate, presets electron beam hot spot sweeping in crucible 101 in the scan period Retouch track.For example, Fig. 9, Figure 10, Figure 11 respectively illustrate of electron beam hot spot in first scan period in crucible 101 Second scanning track 302 and third of the electron beam hot spot in crucible 101 in one scanning 301, second scan periods of track Third of the electron beam hot spot in crucible 101 scans track 303 in scan period.According to electron beam hot spot in the default scan period Distribution of the figure that scanning track in crucible 101 is formed in crucible 101 adjusts in scanning patter, scanning patter The angular speed of hot spot residence time or crucible 101 rotation of each scanning element, until so that presetting electron beam light in the scan period Distribution uniform of the figure that scanning track of the spot in crucible 101 is formed in crucible 101, to realize electron beam hot spot Scanning track in crucible 101 advanced optimizes.
In the embodiment of the present invention, according to electron beam hot spot in the scanning patter calculating default scan period obtained in crucible The specific implementation mode of scanning track in 101 can be:According to the scanning patter and preset electron beam hot spot obtained Scan position model, which calculates, presets scanning track of the electron beam hot spot in crucible 101 in the scan period.
Specifically, there are many electron beam scanning patterns of electronics beam scanning evaporation coating method, for different scanning sides Formula can establish different electron beam beam spot scans position models.Preferably, the embodiment of the present invention is directed to single-point electron beam hot spot Linear scan mode analyzed, establish under linear scan mode single point-like electron beam beam spot scans position model. Before the embodiment of the present invention establishes the scan position model, it make the following assumptions:
(1) radial direction along crucible 101 of electron beam hot spot makees linear scanning.As shown in figure 12, O, A are electronics The scanning endpoint of beam hot spot, wherein O points are the central point of crucible 101, and the length of straightway OA is the radius of crucible 101.At this point, The scan path of electron beam hot spot is A → O → A in one scan period.
(2) ignore electron beam spottiness.
(3) assume that the length of electron beam scanned straight lines section is R, the angular speed of crucible rotation is ω, subsequent time electron beam The angle of hot spot movement is θ, and in a time scan period cycle T, the length of electron beam beam spot scans track is after t moment ΔS.The sweep speed of electron beam hot spot is v and invariable.
Specifically, specifically derivation is as follows for scan position of the current time electron beam hot spot in crucible:Initial time, i.e. t When=0, Δ S=0, θ=0, electron beam facula position is (R, 0).T moment, the length Δ S=in electron beam beam spot scans path vt.Wherein, sweep speed v=2R/T.Consider that the angle of t moment electron beam hot spot movement is the rotation angle of crucible 101 simultaneously Degree, i.e. θ=ω t.Then current time electron beam hot spot H1The coordinate position in crucible 101 become ((R- Δ S) cos ω t, (R-ΔS)sinωt)。
Since in a time scan period T, the scan path of electron beam is trip path, therefore, as current time t When within k-th of scan period, wherein k is positive integer, specific scan position coordinate of the electron beam hot spot in crucible 101 It is divided into following two situations, i.e., preset electron beam beam spot scans position model can be:
Each scanning element is obtained in scanning patter in crucible according to above-mentioned preset electron beam beam spot scans position model Position coordinates in 101 connect and can be obtained by scanning rail of the electron beam hot spot in crucible 101 in the default scan period Mark.
Certainly, it in the embodiment of the present invention, is calculated according to the scanning patter obtained and presets electron beam hot spot in the scan period The specific implementation mode of scanning track in crucible 101 can also be:According in scanning patter in each scan period The time interval of two neighboring scanning element and crucible 101 rotate in position of the preliminary sweep point in crucible 101, scanning patter Angular speed calculate position of each scanning element in crucible 101 in scanning patter successively, then swept each in scanning patter Position of the described point in crucible 101, which connects, can obtain in the default scan period electron beam hot spot in crucible 101 Scan track.
It should be noted that when using combined type scan mode, each height for constituting scanning patter can be scanned Region is approximately a scanning element, calculates position coordinates of the approximate scanning element of each sub- scanning area in crucible 101, even It picks up and be approximately to preset scanning rail of the electron beam hot spot in crucible 101 in the scan period under combined type scan mode Mark.
Step S306:Electron beam filming equipment is controlled electron beam hot spot and is swept with the scanning track after optimization in crucible 101 Coating Materials is retouched, so that Coating Materials evaporates or distils and be deposited on element surface to be plated.
It is visited to avoid in above-mentioned optical thin film Deposition Control Systems other stray lights that may be present to enter photoelectricity as possible Surveying device 105 influences the optimization of scanning track of the electron beam hot spot in crucible 101, in above-mentioned steps S201, photodetector 105 The optical signal sent out when Coating Materials in collected default scanning area is melted or distilled under electronics beam scanning is converted into Electric signal is sent to data processing equipment 106, specifically includes:Coating Materials in the default scanning area will be in the electronics The optical signal sent out when melting or distil under beam scanning is sent to bandpass filter;The photodetector 105, which receives, penetrates institute It states the optical signal of bandpass filter and converts the optical signal to electric signal and be sent to data processing equipment 106.Wherein, band logical The operating wavelength range of optical filter 104 is visible wavelength range, i.e., the transmission region of bandpass filter 104 is visible light wave Section.
It should be noted that electron beam filming equipment controls electron beam hot spot in crucible 101 with the scanning rail after optimization Whether after mark is completed to the scanning of Coating Materials in crucible 101, can observe in the Z-direction of the section of Coating Materials has groove, When there are groove, electronics can be advanced optimized by adjusting the hot spot residence time of each scanning element in scanning patter Scanning track of the beam hot spot in crucible 101, with further increase scanning after Coating Materials surface smoothness, to improve wait for The quality for the optical thin film that plating element surface is deposited.
In conclusion optical thin film deposition scan control method provided in an embodiment of the present invention passes through to photodetector 105 Coating Materials in collected default scanning area melted under the action of electron beam or sublimation process in the light that sends out The intensity distribution of signal is analyzed, and electron beam scanning patter is arranged, and then realizes scanning of the electron beam hot spot in crucible 101 The optimization of track is conducive to the stability for improving the evaporation rate of Coating Materials in default scanning area, and it is heavy to improve optical thin film Long-pending quality.And pass through further the sweeping in crucible 101 to electron beam hot spot of preset electron beam beam spot scans position model Track is retouched to optimize.Relative to the existing method by experience adjustments electron beam beam spot scans track, controllability is more preferable, imitates Rate higher.In addition, also advantageously improving the surface smoothness of Coating Materials after scanning, i.e., Coating Materials Z-direction in crucible 101 Melt uniformity, wherein Z-direction is the depth direction of the Coating Materials in crucible 101.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of optical thin film deposits scan control method, it is applied to optical thin film and deposits scanning control system, which is characterized in that The method includes:
When Coating Materials in collected default scanning area is melted or is distilled under electron beam beam spot scans by photodetector The optical signal sent out is converted into electric signal and is sent to data processing equipment;
Data processing equipment optimizes the electron beam that the electron gun of electron beam filming equipment is sent out according to the electric signal received Scanning track of the hot spot in crucible, wherein the scanning track includes each being scanned in scanning patter and the scanning patter The hot spot residence time of point;
The electron beam filming equipment controls electron beam hot spot and plates membrane material in the crucible with the scanning track scanning after optimization Material, so that the Coating Materials evaporates or distils and be deposited on element surface to be plated.
2. optical thin film according to claim 1 deposits scan control method, which is characterized in that the data processing equipment Optimize electron beam hot spot the sweeping in crucible that the electron gun of electron beam filming equipment is sent out according to the electric signal received Before the step of retouching track, further include:
The data processing equipment sends out control instruction according to the electric signal received and adjusts magnetic field in the electron gun, Correct the position for the electron beam hot spot that the electron gun is sent out;
The photodetector is by electronics of the Coating Materials after being corrected by facula position in collected default scanning area The optical signal sent out when melting or distil under Shu Zuoyong is converted into electric signal and is sent to the data processing equipment.
3. optical thin film according to claim 1 deposits scan control method, which is characterized in that the data processing equipment Optimize electron beam hot spot the sweeping in crucible that the electron gun of electron beam filming equipment is sent out according to the electric signal received The step of retouching track, including:
The data processing equipment obtains the Coating Materials in default scanning area described according to the electric signal received The Energy distribution of the optical signal generated under electron beam beam spot scans;
Scanning patter is set according to the Energy distribution of the optical signal, wherein the scanning patter includes multiple scanning elements, setting The hot spot residence time of each scanning element;
The electricity in the default scan period is obtained according to the scanning patter and preset electron beam beam spot scans position model Scanning track of the beamlet hot spot in the crucible;
The scanning figure is adjusted according to scanning track of the electron beam hot spot in the default scan period in the crucible Shape is with the scanning track after being optimized.
4. optical thin film according to claim 3 deposits scan control method, which is characterized in that the electron beam hot spot is swept Retouching position model is:
Wherein, R is the length of electron beam scanned straight lines section, and Δ S is the length in current time electron beam beam spot scans path, and k is Positive integer, T are the electron beam scan period, and ω is the angular speed of crucible rotation.
5. optical thin film according to claim 3 or 4 deposits scan control method, which is characterized in that the scanning patter Including multiple sub- scanning areas, the electron beam hot spot is successively scanned sub- scanning area described in each, each institute It includes the multiple scanning elements obtained according to the Energy distribution of the optical signal to state sub- scanning area.
6. optical thin film according to claim 3 or 4 deposits scan control method, which is characterized in that the scanning patter Including the multiple scanning element be distributed as raster scanning distribution.
7. optical thin film according to claim 1 deposits scan control method, which is characterized in that the photodetector will The optical signal conversion sent out when Coating Materials is melted or distilled under electron beam beam spot scans in collected default scanning area The step of data processing equipment being sent to for electric signal, including:
The optical signal that Coating Materials in the default scanning area will melt or while distilling sends out under the electronics beam scanning It is sent to bandpass filter;
The photodetector receives the optical signal through the bandpass filter and converts the optical signal to electric signal hair It send to the data processing equipment.
8. a kind of optical thin film deposits scanning control system, which is characterized in that visited including crucible, electron beam filming equipment, photoelectricity Device and data processing equipment are surveyed, for the crucible for being laid with Coating Materials, the crucible is positioned over the electron beam filming equipment In, the photodetector is coupled with the data processing equipment;
The Coating Materials that the photodetector is used to acquire in default scanning area is melted or is risen under electronics beam scanning The optical signal sent out when magnificent, and convert the optical signal to electric signal and be sent to the data processing equipment;
The data processing equipment is used to optimize according to the electric signal received the electron gun of the electron beam filming equipment Scanning track of the electron beam hot spot sent out in the crucible, wherein the scanning track includes scanning patter and described sweeps The hot spot residence time of each scanning element in the shape that traces designs;
The electron beam filming equipment is swept in the crucible with the scanning track after optimization for controlling the electron beam hot spot The Coating Materials is retouched so that the Coating Materials evaporates or distils and be deposited on element surface to be plated.
9. optical thin film according to claim 8 deposits scanning control system, which is characterized in that further include bandpass filter The operating wavelength range of piece, the bandpass filter is visible wavelength range, the Coating Materials in the default scanning area The optical signal that sends out is incident on the photoelectricity by the bandpass filter in fusing or sublimation process under the action of electron beam Detector.
10. optical thin film according to claim 8 deposits scanning control system, which is characterized in that the photodetector For CCD imager part.
CN201610272054.2A 2016-04-28 2016-04-28 A kind of optical thin film deposition scan control method and system Active CN105714252B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610272054.2A CN105714252B (en) 2016-04-28 2016-04-28 A kind of optical thin film deposition scan control method and system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610272054.2A CN105714252B (en) 2016-04-28 2016-04-28 A kind of optical thin film deposition scan control method and system

Publications (2)

Publication Number Publication Date
CN105714252A CN105714252A (en) 2016-06-29
CN105714252B true CN105714252B (en) 2018-09-28

Family

ID=56162449

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610272054.2A Active CN105714252B (en) 2016-04-28 2016-04-28 A kind of optical thin film deposition scan control method and system

Country Status (1)

Country Link
CN (1) CN105714252B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107866568A (en) * 2017-11-10 2018-04-03 华中科技大学 Melt manufacturing process in a kind of selective laser suitable for hydraulic valve block

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726919A (en) * 1995-11-30 1998-03-10 General Electric Company Method and apparatus for measuring electron beam effective focus
DE102005033515A1 (en) * 2005-07-14 2007-01-18 Von Ardenne Anlagentechnik Gmbh Use of plasma-activated electron beam vaporization with diffuse cathodic vacuum arc for coating substrates, controls operational parameters affecting layer thickness and its distribution
CN101619440B (en) * 2009-07-29 2010-11-03 中国科学院上海光学精密机械研究所 Electron beam deflection device of computer controlled coating machine and control method thereof
GB201112776D0 (en) * 2011-07-23 2011-09-07 Univ York An electron beam evaporator
CN102787299B (en) * 2012-05-21 2014-09-10 杭州大和热磁电子有限公司 Vacuum coating device, vacuum coating control system and control method
JP5367196B1 (en) * 2012-09-10 2013-12-11 株式会社シンクロン Measuring apparatus and film forming apparatus

Also Published As

Publication number Publication date
CN105714252A (en) 2016-06-29

Similar Documents

Publication Publication Date Title
CN106825914B (en) A kind of integrated laser welding gun with welding line tracking function
CN102506810B (en) Heliostat angle deviation detection method for tower type solar thermal power generation system
CN109778182B (en) Laser cladding additive forming height online monitoring device and closed-loop control method
US20080088719A1 (en) Digital camera with non-uniform image resolution
CN109269439B (en) Metal molten pool internal profile on-line measuring equipment and method
CN102354225B (en) Calibration system and calibration method for heliostat of solar generating station
CN102331795B (en) Method for controlling sunlight reflecting device to automatically track sun based on facula identification
CN106626377B (en) The increasing material manufacturing method and increasing material manufacturing device of real-time detection powder bed surface deformation
CN103285548B (en) Method and device for positioning ground fire by monocular camera
CN102495640A (en) Heliostat calibration method and system for solar power station
CN102354227A (en) Heliostat calibration system of solar power station and calibration method
CN109508043B (en) Image-based heliostat secondary reflection pointing correction field system and method
CN109822223B (en) Large-breadth laser marking method and device
CN106825569B (en) Increasing material manufacturing method and increasing material manufacturing device with pre- heat function
CN105714252B (en) A kind of optical thin film deposition scan control method and system
CN104296655B (en) A kind of laser tracker picture revolves the scaling method of formula initial angle
CN102231799A (en) Instantaneous optical locating system of PTZ camera and method thereof
CN105874384A (en) Focus following system and method based on multiple distance measuring modes, and shooting system
CN107710047A (en) Projection arrangement, projection module and electronic instrument
CN205588796U (en) First device of thin grid line laser transfer printing of battery piece metal
CN102354226A (en) Heliostat calibration system of solar power station and calibration method
CN106657787A (en) Fast correction method for zoom tracking curve
CN115437030A (en) Guide star closed-loop tracking method and system for high-dispersion optical fiber spectrometer
CN105588564B (en) A kind of stabilization imaging method being suitable for two-dimentional wide area scanning
CN101619440B (en) Electron beam deflection device of computer controlled coating machine and control method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant