CN105714252A - Optical thin film deposition scanning control method and system - Google Patents
Optical thin film deposition scanning control method and system Download PDFInfo
- Publication number
- CN105714252A CN105714252A CN201610272054.2A CN201610272054A CN105714252A CN 105714252 A CN105714252 A CN 105714252A CN 201610272054 A CN201610272054 A CN 201610272054A CN 105714252 A CN105714252 A CN 105714252A
- Authority
- CN
- China
- Prior art keywords
- scanning
- electron beam
- coating materials
- crucible
- hot spot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The embodiment of the invention provides an optical thin film deposition scanning control method and system, and belongs to the technical field of optical thin film deposition scanning control. The method comprises the steps that collected optical signals transmitted when coating materials in a preset scanning area are molten or sublimated under electronic beam optical spot scanning are converted into electric signals through a photoelectric detector to be sent to a data processing device; a scanning track of electronic beam optical spots transmitted by an electronic gun of electronic beam coating equipment in a crucible is optimized by the data processing device according to the received electric signals; and the electronic beam optical spots are controlled by the electronic beam coating equipment to scan the coating materials in the crucible according to the optimized scanning track, so that the coating materials are evaporated or sublimated and deposited on the surface of an element to be coated. According to the optical thin film deposition scanning control method and system, the stability of the evaporation speed of the coating materials and the surface evenness of the coating materials obtained after scanning is completed are effectively improved, and compared with an existing experience optimization and adjustment method, better controllability and higher efficiency are achieved.
Description
Technical field
The present invention relates to optical thin film deposition scan control technical field, in particular to a kind of optical thin film deposition scan control method and system.
Background technology
Depositing precision sweep at optical thin film and control technical study field, the operation of laser aid is played vital effect by the coating quality of optical element.The quality of quality of forming film is heavily dependent on the control accuracy of thin film evaporation stability.The impact that film quality is caused by evaporation stability mainly includes two aspects of both macro and micro.Macroscopically major effect: evaporation atmosphere distribution (i.e. film thickness uniformity)；Tooling value (i.e. centre wavelength drift)；Film thickness monitoring precision (i.e. film system effect).Concentrated expression is the spectral target of thin film.Microcosmic aspect major effect film microstructure, such as lattice disappearance, room, pore size, porosity, plethora defect etc..Concentrated expression is the antibody Monoclonal threshold value of thin film.Therefore, in order to improve the deposition quality of optical thin film, the stability improving Coating Materials evaporation rate is particularly important.
In existing electron beam plated film scan control technology, generally adopt the empirical method of adjustment sweep parameter to electron beam, for instance scanning pattern is optimized adjustment, to improve the stability of Coating Materials evaporation rate.But, empirical method of adjustment also exists that optimization process is uncontrollable, and effect of optimization varies with each individual, and optimizes the time longer, and the problem such as the repeatability of optimum results is poor.
Summary of the invention
It is an object of the invention to provide a kind of optical thin film deposition scan control method and system, it is possible to effectively improve the problems referred to above.
To achieve these goals, the technical scheme that the embodiment of the present invention adopts is as follows:
Embodiments provide a kind of optical thin film deposition scan control method, be applied to optical thin film deposition scanning control system.Described method includes: the optical signal that photodetector sends when Coating Materials in the default scanning area collected is melted under electron beam beam spot scans or distilled is converted into the signal of telecommunication and is sent to data processing equipment；Data processing equipment optimizes electron beam hot spot that the electron gun of electron beam filming equipment the sends scanning track in crucible according to the described signal of telecommunication that receives；Described electron beam filming equipment controls electron beam hot spot in described crucible with the scanning track scanning Coating Materials after optimizing, so that described Coating Materials evaporates or distils and be deposited on element surface to be plated.
Further, described data processing equipment optimizes according to the described signal of telecommunication that receives before the step of electron beam hot spot that the electron gun of electron beam filming equipment the sends scanning track in crucible, described method also includes: described data processing equipment sends control instruction according to the described signal of telecommunication received and adjusts the magnetic field in described electron gun, corrects the position of the electron beam hot spot that described electron gun sends；The optical signal that Coating Materials in the default scanning area collected sends when fusing or distillation under the electron beam effect after facula position correction is converted into the signal of telecommunication and is sent to described data processing equipment by described photodetector.
Further, described data processing equipment optimizes the step of electron beam hot spot that the electron gun of electron beam filming equipment the sends scanning track in crucible according to the described signal of telecommunication that receives, including: described data processing equipment obtains the Energy distribution of the optical signal that the Coating Materials in default scanning area produces under described electron beam beam spot scans according to the described signal of telecommunication received；Energy distribution according to described optical signal arranges scanning patter, and wherein, described scanning patter includes multiple scanning element, arranges the hot spot residence time of each described scanning element；Obtain presetting described electron beam hot spot scanning track in described crucible in the scan period according to described scanning patter and default electron beam beam spot scans position model；According to electron beam hot spot described in the described default scan period in described crucible scanning track adjust described scanning patter with the scanning track after being optimized.
Further, described electron beam beam spot scans position model is:
Wherein, R is the length of electron beam scanning straightway, and Δ S is the length of current time electron beam beam spot scans track, and k is positive integer, and T is the electron beam scanning cycle, and ω is the angular velocity that described crucible rotates.
Further, described scanning patter includes many sub-scanning areas, and scanning area sub-each described is scanned by described electron beam hot spot successively, and each described sub-scanning area includes multiple scanning elements that the Energy distribution according to described optical signal obtains.
Further, the raster scanning that is distributed as of the plurality of scanning element that described scanning patter includes is distributed.
Further, the optical signal that described photodetector sends when Coating Materials in the default scanning area collected is melted under electron beam beam spot scans or distilled is converted into the signal of telecommunication and is sent to the step of data processing equipment, including: the optical signal sent when the Coating Materials in described default scanning area is by fusing under described electron beam scanning or distillation sends to band filter；Described photodetector receives the optical signal through described band filter and described optical signal is converted into signal of telecommunication transmission extremely described data processing equipment.
The embodiment of the present invention additionally provides a kind of optical thin film deposition scanning control system, including crucible, electron beam filming equipment, photodetector and data processing equipment.The optical signal that sends when described photodetector melts under electron beam scanning for the described Coating Materials gathered in default scanning area or distils, and described optical signal is converted into the signal of telecommunication is sent to described data processing equipment.The electron beam hot spot that the electron gun of the described signal of telecommunication described electron beam filming equipment of optimization that described data processing equipment receives for basis sends scanning track in described crucible.Described electron beam filming equipment for control described electron beam hot spot in described crucible with optimize after scanning track scanning described in Coating Materials so that described Coating Materials evaporation or distil and be deposited on element surface to be plated.
Further, described optical thin film deposition scanning control system also includes bandpass filter, the operating wavelength range of described bandpass filter is visible wavelength range, and the Coating Materials in described default scanning area melts under the effect of electron beam or the optical signal that sends in sublimation process incides described photodetector through described bandpass filter.
Further, described photodetector is CCD imager part.
The optical thin film deposition scan control method that the embodiment of the present invention provides, the intensity distributions of the optical signal being melted under the effect of electron beam or being sent in sublimation process by the Coating Materials in default scanning area that photodetector is collected is analyzed, electron beam scanning figure is set, and then realize the optimization of electron beam hot spot scanning track in crucible, not only contribute to improve the stability of the evaporation rate of Coating Materials in default scanning area, also advantageously improve the surface smoothness of Coating Materials after scanning, the i.e. fusing uniformity of Coating Materials Z-direction in crucible, wherein, Z-direction is the depth direction of the Coating Materials in crucible, and then improve the quality of optical thin film deposition.Relative to the existing method by experience adjustments electron beam beam spot scans track, adopt the controllability that electron beam hot spot scanning track in crucible is optimized adjustment by optical thin film deposition scan control method that the embodiment of the present invention provides better, in hgher efficiency.
Other features and advantages of the present invention will be set forth in description subsequently, and, partly become apparent from description, or understand by implementing the embodiment of the present invention.The purpose of the present invention and other advantages can be realized by structure specifically noted in the description write, claims and accompanying drawing and be obtained.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, the accompanying drawing used required in embodiment will be briefly described below, it is to be understood that, the following drawings illustrate only certain embodiments of the present invention, therefore the restriction to scope it is not construed as, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other relevant accompanying drawings according to these accompanying drawings.
The structural representation of a kind of optical thin film scanning Deposition Control Systems that Fig. 1 provides for first embodiment of the invention；
The flow chart of a kind of optical thin film deposition scan control method that Fig. 2 provides for second embodiment of the invention；
The flow chart of the another kind of optical thin film deposition scan control method that Fig. 3 provides for second embodiment of the invention；
The schematic diagram of the first sub-scanning area in the combination type scan mode that Fig. 4 provides for second embodiment of the invention；
The schematic diagram of the second sub-scanning area in the combination type scan mode that Fig. 5 provides for second embodiment of the invention；
The schematic diagram of the 3rd sub-scanning area in the combination type scan mode that Fig. 6 provides for second embodiment of the invention；
The schematic diagram of scanning patter in the combination type scan mode that Fig. 7 provides for second embodiment of the invention；
The schematic diagram of scanning patter in the raster scanning mode that Fig. 8 provides for second embodiment of the invention；
The schematic diagram of the scanning track in the first scan period that Fig. 9 provides for second embodiment of the invention；
The schematic diagram of the scanning track in the second scan period that Figure 10 provides for second embodiment of the invention；
The schematic diagram of the scanning track in the 3rd scan period that Figure 11 provides for second embodiment of the invention；
The schematic diagram of the electron beam beam spot scans position model preset that Figure 12 provides for second embodiment of the invention.
In figure, accompanying drawing labelling is respectively as follows:
Crucible 101；Coating Materials 102；Electron gun 103；Bandpass filter 104；Photodetector 105；Data processing equipment 106；Preset scanning area 200；Position, preset 210；First scanning track 301；Second scanning track 302；3rd scanning track 303.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiments.Generally can with various different configurations arrange and design with the assembly of the embodiment of the present invention that illustrate described in accompanying drawing herein.
Therefore, below the detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit claimed the scope of the present invention, but is merely representative of the selected embodiment of the present invention.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
It should also be noted that similar label and letter below figure represent similar terms, therefore, once a certain Xiang Yi accompanying drawing is defined, then it need not be carried out definition further and explain in accompanying drawing subsequently.
In describing the invention, it should be noted that, orientation or the position relationship of the instructions such as term " " center ", " on ", D score be based on orientation shown in the drawings or position relationship; or the orientation usually put when this invention product uses or position relationship; be for only for ease of the description present invention and simplifying and describe; rather than instruction or imply indication device or element must have specific orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.Additionally, term " first ", " second ", " the 3rd " etc. are only used for distinguishing description, and it is not intended that indicate or hint relative importance.
Additionally, the term such as term " level ", " vertically " is not offered as requiring parts abswolute level or vertical, but can be slightly tilted.As " level " only refers to its direction " vertically " level more relatively, it is not represent that this structure must be perfectly level, but can be slightly tilted.
In describing the invention, in addition it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ", " coupling " should be interpreted broadly, for instance, coupling can be direct-coupling, intermediary INDIRECT COUPLING can also be passed through, it is possible to be the connection of two element internals.For the ordinary skill in the art, it is possible to concrete condition understands above-mentioned term concrete meaning in the present invention.
In existing electron beam plated film scan control technology, mostly adopt the technological parameter that electron beam scanning is controlled by empirical method of adjustment, for instance scanning pattern, hot spot residence time etc. are optimized adjustment, to improve the stability of Coating Materials evaporation rate.It is uncontrollable that this empirical method of adjustment also exists optimization process, and effect of optimization varies with each individual, and optimizes the time longer, and the problem that the repeatability of optimum results is poor.In consideration of it, embodiments provide a kind of optical thin film deposition scanning control system and be applied to the optical thin film deposition scan control method of this system.
First embodiment
Refer to Fig. 1, the optical thin film deposition scanning control system that the embodiment of the present invention provides includes crucible 101, electron beam filming equipment, photodetector 105 and data processing equipment 106.Crucible 101 is positioned in the vacuum chamber of electron beam filming equipment, is used for laying Coating Materials 102.Photodetector 105 couples with data processing equipment 106.
The actual process being exactly electronic kinetic energy and being converted into heat energy of the evaporation process of Coating Materials.The electronics of high-speed motion launched by the electron gun 103 of electron beam filming equipment, under the effect of contraction in magnetic field, with Coating Materials 102 surface in energy electron motion to crucible 101, produce a large amount of heat energy because of sharp impacts, cause that Coating Materials evaporates or distillation after arriving fusing point.While Coating Materials fusing or distillation, sending the place that substantial amounts of light and heat, fusing or distillation are more violent, the light and heat sent also must be more many.
Photodetector 105 is for gathering the optical signal that in default scanning area, Coating Materials sends when melting under electron beam scanning or distil, and described optical signal is converted into the signal of telecommunication is sent in data processing equipment 106.Wherein, default scanning area can be arranged according to the control ability of the area of crucible and electron gun.For example, it is possible to the size according to electron beam hot spot is divided into position, multiple preset.It should be noted that the intensity distributions of optical signal that the Coating Materials at each position, preset place sends when melting under electron beam hot spot effect or distil reflects this position, preset place Coating Materials actual evaporation intensity distributions under electron beam hot spot effect.The evaporation intensity of the position Coating Materials that light signal strength is more high is more big.In the embodiment of the present invention, photodetector 105 can preferably employ charge-coupled image sensor (Charge-coupledDevice, CCD), it is of course also possible to adopt other photodetector.
The electron beam hot spot that the electron gun 103 of the signal of telecommunication optimization electron beam filming equipment that data processing equipment 106 receives for basis sends scanning track in crucible.The signal of telecommunication received is processed by data processing equipment 106, obtains presetting the intensity distributions of the optical signal that Coating Materials sends when melting under electron beam beam spot scans or distil in scanning area.
Hereafter, it is possible to the intensity distributions of the optical signal sent when melting under electron beam scanning according to Coating Materials in acquired default scanning area or distil arranges scanning patter.Concrete, it is possible to the intensity distributions situation of the optical signal sent when melting under electron beam effect according to the Coating Materials at each position, preset place in the default scanning area obtained in advance or distil, from each position, preset, choose scanning element, constitute scanning patter.It should be noted that scanning patter includes multiple scanning element, choose the position, preset that during scanning element, prioritizing selection hot spot strong district area is bigger.Wherein, the strong district of described hot spot is that in hot spot, light intensity is more than the region of the first intensity threshold, and the intensity distributions of the optical signal sent when described first intensity threshold melts under electron beam effect according to the Coating Materials at each position, preset place or distils is arranged.Then the hot spot residence time of each scanning element in scanning patter is set, namely the interval between adjacent two scanning elements in electron beam scanning process is set.Such as, second intensity threshold can be set according to the intensity distributions situation of described optical signal, increase the light intensity hot spot residence time less than the scanning element of described second intensity threshold, reduce intensity more than the hot spot residence time of the scanning element of described second intensity threshold, the stability of the evaporation rate of Coating Materials and the surface smoothness of Coating Materials after scanning in crucible during to improve scanning.
The scanning track in crucible of the electron beam hot spot after optimization is may determine that according to scanning patter.Further, electron beam filming equipment control electron beam hot spot crucible 101 in optimization after scanning track scanning Coating Materials 102 so that described Coating Materials 102 is deposited on element surface to be plated after evaporating or distilling.
Additionally, due to system is likely present other veiling glare, for instance the self-luminous etc. in electron beam filming equipment.The optimization in electron beam beam spot scans path is affected, as it is shown in figure 1, the optical thin film deposition scanning control system that the embodiment of the present invention provides also includes bandpass filter 104 in order to avoid other veiling glare to enter photodetector 105 as far as possible.The operating wavelength range of bandpass filter 104 is visible wavelength range.When electron beam hot spot acts on the Coating Materials in default scanning area, the optical signal that is simultaneously emitted by of Coating Materials fusing or distillation incides photodetector 105 through bandpass filter 104.
In sum, the embodiment of the present invention utilizes photodetector 105 to gather and presets the intensity distributions of optical signal that the Coating Materials at each position, preset place in scanning area melts under the effect of electron beam or sends in sublimation process, the intensity distributions of described optical signal is optimized electron beam hot spot scanning track in crucible as the foundation arranging electron beam scanning figure, not only contribute to improve the stability of the evaporation rate of Coating Materials in default scanning area, also advantageously improve the surface smoothness of Coating Materials after scanning, the i.e. fusing uniformity of Coating Materials Z-direction in crucible, wherein, Z-direction is the depth direction of the Coating Materials in crucible, and then improve the quality of optical thin film deposition.Relative to the existing method by experience adjustments electron beam beam spot scans track, the controllability of the optical thin film deposition scanning control system that the embodiment of the present invention provides is better, in hgher efficiency.
Second embodiment
Embodiments provide a kind of optical thin film deposition scan control method, be applied to above-mentioned optical thin film deposition scanning control system.Described optical thin film deposition scanning control system includes crucible 101, electron beam filming equipment, photodetector 105 and data processing equipment 106.Crucible 101 is positioned in the vacuum chamber of electron beam filming equipment, is used for laying Coating Materials 102.Photodetector 105 couples with data processing equipment 106.As in figure 2 it is shown, described optical thin film deposition scan control method includes:
Step S201: the optical signal that photodetector 105 sends when Coating Materials in the default scanning area collected is melted under electron beam beam spot scans or distilled is converted into the signal of telecommunication and is sent to data processing equipment 106；
Wherein, default scanning area can be arranged according to the control ability of the area of crucible 101 and electron gun 103.For example, it is possible to the size according to electron beam hot spot is divided into position, multiple preset.Coating Materials is laid in crucible 101.Electron beam filming equipment controls electron gun 103 and sends electron beam hot spot each position, preset is scanned, preset the Coating Materials at position place, each preset in scanning area melt under electron beam hot spot effect or distil be simultaneously emitted by optical signal.Described optical signal can be gathered by photodetector 105, and described optical signal is converted into the signal of telecommunication is sent to data processing equipment 106.Wherein, photodetector 105 can preferably employ charge-coupled image sensor (CCD), it is of course also possible to adopt other photodetector 105.Data processing equipment 106 can be computer, it is also possible to be that other has data processing function and the circuit module of storage function.
Step S202: data processing equipment 106 optimizes electron beam hot spot that the electron gun 103 of electron beam filming equipment the sends scanning track in crucible 101 according to the signal of telecommunication that receives；
The signal of telecommunication received is processed by data processing equipment 106, obtains presetting the intensity distributions of the optical signal that Coating Materials sends when melting under electron beam beam spot scans or distil in scanning area.Hereafter, it is possible to the intensity distributions of the optical signal sent when melting under electron beam effect according to each position, preset place Coating Materials in acquired default scanning area or distil arranges scanning patter.Concrete, it is possible to the intensity distributions situation of the optical signal sent when melting under electron beam effect according to the Coating Materials at each position, preset place in the default scanning area obtained in advance or distil, from each position, preset, choose scanning element, constitute scanning patter.It should be noted that scanning patter includes multiple scanning element, choose the position, preset that during scanning element, prioritizing selection hot spot strong district area is bigger.Wherein, the strong district of described hot spot is that in hot spot, light intensity is more than the region of the first intensity threshold, and the intensity distributions of the optical signal sent when described first intensity threshold melts under electron beam effect according to the Coating Materials at each position, preset place or distils is arranged.
Hereafter, the hot spot residence time of each scanning element in scanning patter is set, namely the interval between adjacent two scanning elements in electron beam scanning process is set.Such as, second intensity threshold can be set according to the intensity distributions situation of described optical signal, increase the light intensity hot spot residence time less than the scanning element of described second intensity threshold, reduce intensity more than the hot spot residence time of the scanning element of described second intensity threshold, the stability of the evaporation rate of Coating Materials and the surface smoothness of Coating Materials after scanning in crucible 101 during to improve scanning.The scanning track in crucible 101 of the electron beam hot spot after optimization is may determine that according to scanning patter.
Step S203: electron beam filming equipment controls electron beam hot spot in crucible 101 with the scanning track scanning Coating Materials after optimizing, so that Coating Materials evaporates or distils and be deposited on element surface to be plated.
What electron beam filming equipment adopted is electron-beam vapor deposition method plated film, electron-beam vapor deposition method is the one of vacuum vapor plating, it is utilize electron beam to directly heat Coating Materials under vacuum, makes Coating Materials gasification and transport to element to be plated, element to be plated condenses the method forming thin film.When the rotating speed of crucible 101 is determined, electron beam filming equipment can pass through to control the hot spot residence time of electron beam hot spot scanning patter in default scanning area or scanning pattern and each scanning element and control electron beam hot spot scanning track in crucible 101.
Such as, the electron gun 103 of electron beam filming equipment is magnetic deflection gun 103, and the initial magnetic field distribution of magnetic deflection gun 103 is not good, it is possible to cause that deviation occur in actual electron beam facula position and theoretical coordinate position.Therefore, in the invention process, before above-mentioned step S202, described optical thin film deposition scan control method also includes: data processing equipment 106 sends control instruction according to the described signal of telecommunication received and adjusts the magnetic field in electron gun 103, the position of the electron beam hot spot that correcting electronic rifle 103 sends.Hereafter, the optical signal that each position, preset place Coating Materials in the default scanning area collected sends when fusing or distillation under the electron beam effect after facula position correction is converted into the signal of telecommunication and is sent to data processing equipment 106 by photodetector 105.
Concrete, in the embodiment of the present invention, the detailed description of the invention of the electron beam facula position that correcting electronic rifle 103 sends can be: choosing the position, multiple preset in default scanning area as fixed point position, the optical signal that photodetector 105 sends when the Coating Materials at the fixed point position place collected is melted under electron beam beam spot scans or distilled is converted into the signal of telecommunication and is sent to data processing equipment 106.The actual distribution situation of the optical signal that the Coating Materials at the fixed point position place that data processing equipment 106 obtains under original state in default scanning area according to the signal of telecommunication received sends when melting under electron beam effect or distil, namely the actual distribution situation of described optical signal reflects practical function position and the intensity distributions situation of electron beam spot.Wherein, described fixed point position can include the position, preset presetting scanning area center, and in the rectangular coordinate system set up with the central point of default scanning area for initial point, the position, one or more preset chosen at equal intervals in the positive axis of coordinate axes and negative semiaxis, it is of course also possible to select other position, preset.Further, the facula position that data processing equipment 106 collects according to photodetector 105 adjusts the Distribution of Magnetic Field of electron gun 103 relative to the side-play amount of theoretical position, the physical location making the hot spot at the fixed point position place collected is coincide with theoretical position, thus realizing the correction of the electron beam facula position that electron gun 103 sends.
In order to optimize electron beam hot spot scanning track in crucible 101 further, as it is shown on figure 3, the embodiment of the present invention additionally provides another kind of optical thin film deposition scan control method, specifically include step S301 to step S306.
Step S301: the optical signal that photodetector 105 sends when Coating Materials in the default scanning area collected is melted under electron beam beam spot scans or distilled is converted into the signal of telecommunication and is sent to data processing equipment 106；
Step S302: data processing equipment 106 obtains presetting the Energy distribution of the optical signal that Coating Materials produces under electron beam beam spot scans in scanning area according to the signal of telecommunication received；
Wherein, the signal of telecommunication is to be sent to data processing equipment 106 by photodetector 105.Default scanning area can be divided into position, multiple preset according to the size of electron beam hot spot, and the intensity distributions of the optical signal that the Coating Materials at each position, preset place sends when melting under electron beam hot spot effect or distil reflects this position, preset place Coating Materials actual evaporation intensity distributions under electron beam effect.The evaporation intensity of the position Coating Materials that light signal strength is more high is more big.
Step S303: scanning patter is set according to the Energy distribution of described optical signal；
Concrete, it is possible to the intensity distributions situation of the optical signal sent when melting under electron beam effect according to the Coating Materials at each position, preset place in the default scanning area obtained in advance or distil, from each position, preset, choose scanning element, constitute scanning patter.It should be noted that scanning patter includes multiple scanning element, and choose the position, preset that during scanning element, prioritizing selection hot spot strong district area is bigger.The hot spot residence time of each scanning element in scanning patter is set, namely the interval between adjacent two scanning elements in electron beam scanning process is set.
Concrete, the electron beam hot spot that the electron gun 103 of electron beam filming equipment sends is when default scanning area interscan, it is possible to adopt combination type scan mode, it would however also be possible to employ raster scanning mode.Raster scanning mode has simple advantage, when less and electron gun 103 the hot spot focusing effect of crucible 101 area is better, it is possible to preferential employing raster scanning mode.And when crucible 101 area is relatively big, when bad or electron gun 103 the control ability of the hot spot focusing effect of electron gun 103 is more weak, it may be preferred to adopt combination type scan mode, to realize better scan control effect.
In the embodiment of the present invention, the detailed description of the invention of combination type scan mode can be: the intensity distributions of the optical signal sent when melting under electron beam hot spot effect according to the Coating Materials at each position, preset place in default scanning area or distil, select the position, preset that part is adjacent as scanning element, forming sub-scanning area, many sub-scanning areas can form a complete scanning patter.It addition, the intensity distributions of optical signal that the Coating Materials at each the scanning element place included by sub-scanning area sends when melting under electron beam hot spot effect or distil arranges the hot spot residence time of each scanning element in sub-scanning area.Such as, second intensity threshold can be set according to the intensity distributions situation of described optical signal, increase the light intensity hot spot residence time less than the scanning element of described second intensity threshold, reduce intensity more than the hot spot residence time of the scanning element of described second intensity threshold, the stability of the evaporation rate of Coating Materials and the surface smoothness of Coating Materials after scanning in crucible 101 during to improve scanning.Hereafter, control electron beam hot spot successively scanning area sub-each described to be scanned.
Such as, as shown in Figure 4, relatively large border circular areas represents default scanning area 200, presets circle relatively small in scanning area 200 and represents position, preset 210, wherein, if hypographous roundlet represents scanning element.When adopting combination type scan mode to carry out electron beam scanning, scanning patter can the 3rd sub-scanning area of the multiple scanning elements composition shown in the first sub-scanning area of multiple scanning elements composition as shown in Figure 4, the second sub-scanning area of the multiple scanning elements composition shown in Fig. 5 and Fig. 6 combine, as shown in Figure 7.
The detailed description of the invention of raster scanning mode can be: the intensity distributions according to the optical signal that the Coating Materials at each position, preset 210 place in default scanning area 200 sends when melting under electron beam hot spot effect or distil, select position 210, multiple preset as scanning element, composition scanning patter, and the hot spot residence time of each scanning element is set.The distribution mode of the multiple scanning elements included by scanning patter is raster scanning distribution.The distribution of described raster scanning can be the scanning element presetting the interior predetermined number being distributed in the radial direction along crucible 101 of scanning area 200, and the scanning pattern of raster scanning mode is the radial direction point by point scanning along crucible 101.Such as, as shown in Figure 8, scanning patter includes N1～N11、M1～M9, totally 20 scanning elements, and the scanning pattern in the scan period is from N1Point by point scanning is to N11, then from M9Point by point scanning is to M1。
Step S304: obtain presetting electron beam hot spot scanning track in crucible 101 in the scan period according to scanning patter and default electron beam beam spot scans position model；
Step S305: according to electron beam hot spot in the default scan period in crucible 101 scanning track adjust scanning patter with the scanning track after being optimized.
In order to optimize electron beam hot spot scanning track in crucible 101 further, it is possible to calculate according to the scanning patter obtained and default electron beam beam spot scans position model and preset electron beam hot spot scanning track in crucible 101 in the scan period.Such as, Fig. 9, Figure 10, Figure 11 respectively illustrate the second scanning track 302 in crucible 101 of electron beam hot spot in first scanning 301, second scan period of track in crucible 101 of electron beam hot spot in first scan period and the electron beam hot spot the 3rd scanning track 303 in crucible 101 in the 3rd scan period.According to the distribution in crucible 101 of the scanning figure that forms of track in crucible 101 of the electron beam hot spot in the default scan period, the angular velocity that the hot spot residence time of each scanning element in adjustment scanning patter, scanning patter or crucible 101 rotate, until making to preset electron beam hot spot scanning track in crucible 101 forms in the scan period the figure distribution uniform in crucible 101, thus realizing the further optimization of electron beam hot spot scanning track in crucible 101.
In the embodiment of the present invention, calculating the detailed description of the invention of electron beam hot spot scanning track in crucible 101 in the default scan period according to the scanning patter obtained can be: calculates according to the scanning patter obtained and default electron beam beam spot scans position model and presets electron beam hot spot scanning track in crucible 101 in the scan period.
Concrete, the electron beam scanning pattern of electron beam scanning evaporation coating method has multiple, for different scan modes, it is possible to set up different electron beam beam spot scans position models.Preferably, the embodiment of the present invention has been analyzed for the orthoscopic scan mode of single-point electron beam hot spot, establishes orthoscopic scan mode and places an order point-like electron bundle beam spot scans position model.The embodiment of the present invention make the following assumptions before setting up described scanning position model:
(1) radial direction along crucible 101 of electron beam hot spot does orthoscopic scanning.As shown in figure 12, O, A are the scanning end points of electron beam hot spot, and wherein O point is the central point of crucible 101, and the length of straightway OA is the radius of crucible 101.Now, in the scan period, the scanning pattern of electron beam hot spot is A → O → A.
(2) electron beam spottiness is ignored.
(3) length assuming electron beam scanning straightway is R, and the angular velocity that crucible rotates is ω, and the angle that subsequent time electron beam hot spot moves is θ, and in a scan period period of time T, after t, the length of electron beam beam spot scans track is Δ S.The sweep speed of electron beam hot spot is v and invariable.
Concrete, current time electron beam hot spot scanning position in crucible is specifically derived as follows: initial time, namely during t=0, Δ S=0, θ=0, electron beam facula position is (R, 0).T, the length Δ S=vt in electron beam beam spot scans path.Wherein, sweep speed v=2R/T.Consider that the angle that t electron beam hot spot moves is the anglec of rotation of crucible 101, i.e. θ=ω t simultaneously.Then current time electron beam hot spot H1The coordinate position in crucible 101 become ((R-Δ S) cos ω t, (R-Δ S) sin ω t).
Due in a time scan period T, the scanning pattern of electron beam is trip path, therefore, when current time t is positioned at the kth scan period, wherein, k is positive integer, and the electron beam hot spot concrete scanning position coordinates in crucible 101 is divided into following two situation, and the electron beam beam spot scans position model namely preset can be:
Obtain each scanning element position coordinates in crucible 101 in scanning patter according to above-mentioned default electron beam beam spot scans position model, couple together and can be obtained by presetting electron beam hot spot scanning track in crucible 101 in the scan period.
Certainly, in the embodiment of the present invention, calculate according to the scanning patter that obtains and preset the detailed description of the invention of electron beam hot spot scanning track in crucible 101 in the scan period and can also be: according to the position in crucible 101 of the preliminary sweep point in each scan period interscan figure, in scanning patter, the interval of adjacent two scanning elements and the angular velocity of crucible 101 rotation calculate each scanning element position in crucible 101 in scanning patter successively, again each scanning element position in crucible 101 in scanning patter is coupled together and namely can obtain presetting electron beam hot spot scanning track in crucible 101 in the scan period.
It should be noted that, when adopting combination type scan mode, each the sub-scanning area constituting scanning patter can be approximately a scanning element, calculate the approximate scanning element of each the sub-scanning area position coordinates in crucible 101, couple together namely to can be approximated to be and under combination type scan mode, preset electron beam hot spot scanning track in crucible 101 in the scan period.
Step S306: electron beam filming equipment controls electron beam hot spot in crucible 101 with the scanning track scanning Coating Materials after optimizing, so that Coating Materials evaporates or distils and be deposited on element surface to be plated.
The optimization of electron beam hot spot scanning track in crucible 101 is affected in order to avoid other veiling glare that may be present in above-mentioned optical thin film Deposition Control Systems to enter photodetector 105 as far as possible, in above-mentioned steps S201, the optical signal that photodetector 105 sends when Coating Materials in the default scanning area collected is melted under electron beam scanning or distilled is converted into the signal of telecommunication and is sent to data processing equipment 106, specifically include: the optical signal sent when the Coating Materials in described default scanning area is by fusing under described electron beam scanning or distillation sends to band filter；Described photodetector 105 receives the optical signal through described band filter and described optical signal is converted into the signal of telecommunication sends to data processing equipment 106.Wherein, the operating wavelength range of bandpass filter 104 is visible wavelength range, and namely the transmission region of bandpass filter 104 is visible light wave range.
It should be noted that, electron beam filming equipment controls electron beam hot spot and completes after the scanning of Coating Materials in crucible 101 with the scanning track after optimizing in crucible 101, can observe Coating Materials section Z-direction on whether have groove, when there is groove, can pass through to adjust the hot spot residence time of each scanning element in scanning patter, optimize electron beam hot spot scanning track in crucible 101 further, with the surface smoothness of Coating Materials after further raising scanning, thus improving the quality of the optical thin film that element surface to be plated deposits.
In sum, the optical thin film deposition scan control method that the embodiment of the present invention provides passes through the intensity distributions of the optical signal that the Coating Materials in the default scanning area that photodetector 105 is collected melts under the effect of electron beam or sends in sublimation process and is analyzed, electron beam scanning figure is set, and then realize the optimization of electron beam hot spot scanning track in crucible 101, be conducive to improving the stability of the evaporation rate of Coating Materials in default scanning area, improve the quality of optical thin film deposition.And further electron beam hot spot scanning track in crucible 101 is optimized by the electron beam beam spot scans position model preset.Relative to the existing method by experience adjustments electron beam beam spot scans track, controllability is better, in hgher efficiency.Additionally, the surface smoothness of Coating Materials after also advantageously improving scanning, i.e. the fusing uniformity of Coating Materials Z-direction in crucible 101, wherein, Z-direction is the depth direction of the Coating Materials in crucible 101.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (10)
1. an optical thin film deposition scan control method, is applied to optical thin film deposition scanning control system, it is characterised in that described method includes:
The optical signal that photodetector sends when Coating Materials in the default scanning area collected is melted under electron beam beam spot scans or distilled is converted into the signal of telecommunication and is sent to data processing equipment；
Data processing equipment optimizes electron beam hot spot that the electron gun of electron beam filming equipment the sends scanning track in crucible according to the described signal of telecommunication that receives；
Described electron beam filming equipment controls electron beam hot spot in described crucible with the scanning track scanning Coating Materials after optimizing, so that described Coating Materials evaporates or distils and be deposited on element surface to be plated.
2. optical thin film according to claim 1 deposition scan control method, it is characterized in that, described data processing equipment optimizes before the step of electron beam hot spot that the electron gun of electron beam filming equipment the sends scanning track in crucible according to the described signal of telecommunication that receives, also includes:
Described data processing equipment sends control instruction according to the described signal of telecommunication received and adjusts the magnetic field in described electron gun, corrects the position of the electron beam hot spot that described electron gun sends；
The optical signal that Coating Materials in the default scanning area collected sends when fusing or distillation under the electron beam effect after facula position correction is converted into the signal of telecommunication and is sent to described data processing equipment by described photodetector.
3. optical thin film according to claim 1 deposition scan control method, it is characterized in that, described data processing equipment optimizes the step of electron beam hot spot that the electron gun of electron beam filming equipment the sends scanning track in crucible according to the described signal of telecommunication that receives, including:
Described data processing equipment obtains presetting the Energy distribution of the optical signal that the Coating Materials in scanning area produces under described electron beam beam spot scans according to the described signal of telecommunication received；
Energy distribution according to described optical signal arranges scanning patter, and wherein, described scanning patter includes multiple scanning element, arranges the hot spot residence time of each described scanning element；
Obtain presetting described electron beam hot spot scanning track in described crucible in the scan period according to described scanning patter and default electron beam beam spot scans position model；
According to electron beam hot spot described in the described default scan period in described crucible scanning track adjust described scanning patter with the scanning track after being optimized.
4. optical thin film according to claim 3 deposition scan control method, it is characterised in that described electron beam beam spot scans position model is:
Wherein, R is the length of electron beam scanning straightway, and Δ S is the length in current time electron beam beam spot scans path, and k is positive integer, and T is the electron beam scanning cycle, and ω is the angular velocity that described crucible rotates.
5. the optical thin film deposition scan control method according to claim 3 or 4, it is characterized in that, described scanning patter includes many sub-scanning areas, scanning area sub-each described is scanned by described electron beam hot spot successively, and each described sub-scanning area includes multiple scanning elements that the Energy distribution according to described optical signal obtains.
6. the optical thin film deposition scan control method according to claim 3 or 4, it is characterised in that the raster scanning that is distributed as of the plurality of scanning element that described scanning patter includes is distributed.
7. optical thin film according to claim 1 deposition scan control method, it is characterized in that, the optical signal that described photodetector sends when Coating Materials in the default scanning area collected is melted under electron beam beam spot scans or distilled is converted into the signal of telecommunication and is sent to the step of data processing equipment, including:
The optical signal sent when Coating Materials in described default scanning area is by fusing under described electron beam scanning or distillation sends to band filter；
Described photodetector receives the optical signal through described band filter and described optical signal is converted into signal of telecommunication transmission extremely described data processing equipment.
8. an optical thin film deposition scanning control system, it is characterized in that, including crucible, electron beam filming equipment, photodetector and data processing equipment, described crucible is used for laying Coating Materials, described crucible is positioned in described electron beam filming equipment, and described photodetector couples with described data processing equipment；
The optical signal that sends when described photodetector melts under electron beam scanning for the described Coating Materials gathered in default scanning area or distils, and described optical signal is converted into the signal of telecommunication is sent to described data processing equipment；
The electron beam hot spot that the electron gun of the described signal of telecommunication described electron beam filming equipment of optimization that described data processing equipment receives for basis sends scanning track in described crucible；
Described electron beam filming equipment for control described electron beam hot spot in described crucible with optimize after scanning track scanning described in Coating Materials so that described Coating Materials evaporation or distil and be deposited on element surface to be plated.
9. optical thin film according to claim 8 deposition scanning control system, it is characterized in that, also include bandpass filter, the operating wavelength range of described bandpass filter is visible wavelength range, and the Coating Materials in described default scanning area melts under the effect of electron beam or the optical signal that sends in sublimation process incides described photodetector through described bandpass filter.
10. optical thin film according to claim 8 deposition scanning control system, it is characterised in that described photodetector is CCD imager part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610272054.2A CN105714252B (en) | 2016-04-28 | 2016-04-28 | A kind of optical thin film deposition scan control method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610272054.2A CN105714252B (en) | 2016-04-28 | 2016-04-28 | A kind of optical thin film deposition scan control method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105714252A true CN105714252A (en) | 2016-06-29 |
| CN105714252B CN105714252B (en) | 2018-09-28 |
Family
ID=56162449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610272054.2A Active CN105714252B (en) | 2016-04-28 | 2016-04-28 | A kind of optical thin film deposition scan control method and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105714252B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107866568A (en) * | 2017-11-10 | 2018-04-03 | 华中科技大学 | Melt manufacturing process in a kind of selective laser suitable for hydraulic valve block |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5726919A (en) * | 1995-11-30 | 1998-03-10 | General Electric Company | Method and apparatus for measuring electron beam effective focus |
| DE102005033515A1 (en) * | 2005-07-14 | 2007-01-18 | Von Ardenne Anlagentechnik Gmbh | Use of plasma-activated electron beam vaporization with diffuse cathodic vacuum arc for coating substrates, controls operational parameters affecting layer thickness and its distribution |
| CN101619440A (en) * | 2009-07-29 | 2010-01-06 | 中国科学院上海光学精密机械研究所 | Electron beam deflection device of computer controlled coating machine and control method thereof |
| CN102787299A (en) * | 2012-05-21 | 2012-11-21 | 杭州大和热磁电子有限公司 | Vacuum coating device, vacuum coating control system and control method |
| WO2013014410A1 (en) * | 2011-07-23 | 2013-01-31 | Bostech Ltd | Electron beam evaporation apparatus |
| CN104350380A (en) * | 2012-09-10 | 2015-02-11 | 株式会社新柯隆 | Measuring apparatus and film-forming apparatus |
-
2016
- 2016-04-28 CN CN201610272054.2A patent/CN105714252B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5726919A (en) * | 1995-11-30 | 1998-03-10 | General Electric Company | Method and apparatus for measuring electron beam effective focus |
| DE102005033515A1 (en) * | 2005-07-14 | 2007-01-18 | Von Ardenne Anlagentechnik Gmbh | Use of plasma-activated electron beam vaporization with diffuse cathodic vacuum arc for coating substrates, controls operational parameters affecting layer thickness and its distribution |
| CN101619440A (en) * | 2009-07-29 | 2010-01-06 | 中国科学院上海光学精密机械研究所 | Electron beam deflection device of computer controlled coating machine and control method thereof |
| WO2013014410A1 (en) * | 2011-07-23 | 2013-01-31 | Bostech Ltd | Electron beam evaporation apparatus |
| CN102787299A (en) * | 2012-05-21 | 2012-11-21 | 杭州大和热磁电子有限公司 | Vacuum coating device, vacuum coating control system and control method |
| CN104350380A (en) * | 2012-09-10 | 2015-02-11 | 株式会社新柯隆 | Measuring apparatus and film-forming apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107866568A (en) * | 2017-11-10 | 2018-04-03 | 华中科技大学 | Melt manufacturing process in a kind of selective laser suitable for hydraulic valve block |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105714252B (en) | 2018-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102506810B (en) | Heliostat angle deviation detection method for tower type solar thermal power generation system | |
| CN111970058B (en) | Rapid inter-satellite laser communication capturing method based on beaconing | |
| CN102185654B (en) | Laser communication system | |
| CN105785343A (en) | Spacial multi-beam laser emitter, multichannel receiving apparatus and detection apparatus | |
| CN109269439B (en) | Metal molten pool internal profile on-line measuring equipment and method | |
| CN104092494A (en) | High-precision optical phased capturing and tracking system | |
| CN103837982A (en) | Method for controlling array light beam co-target collimation of target in loop based on light spot centroid calculation | |
| CN106626377B (en) | The increasing material manufacturing method and increasing material manufacturing device of real-time detection powder bed surface deformation | |
| CN101866006A (en) | Rotary multi-sensor photoelectric radar | |
| CN109269985A (en) | The high frequency ultrasound on-line monitoring method of the mobile bath defect of metal | |
| CN102323593A (en) | Two-dimensional dynamic target capturing system | |
| WO2013044848A1 (en) | Calibration system and calibration method for heliostat in solar power station | |
| CN105874384A (en) | Focus following system and method based on multiple distance measuring modes, and shooting system | |
| CN104296655A (en) | Calibration method of image rotation formula initial angle of laser tracker | |
| CN108873554B (en) | Multi-user capturing and tracking method based on liquid crystal optical phased array | |
| CN105714252A (en) | Optical thin film deposition scanning control method and system | |
| Zhang et al. | A new composite spiral scanning approach for beaconless spatial acquisition and experimental investigation of robust tracking control for laser communication system with disturbance | |
| CN102354226A (en) | Heliostat calibration system of solar power station and calibration method | |
| CN102428360B (en) | Method and device for spectral analysis of metal coating layer deposited on surface of steel strip | |
| CN110076451A (en) | Laser processing device and laser focal compensation method | |
| CN107797095A (en) | A kind of space navigation method applied to robot motion | |
| CN101619440B (en) | Electron beam deflection device of computer controlled coating machine and control method thereof | |
| CN105387769B (en) | Cannon multi-axial cord uniformity photoelectric detection system based on self-calibration technology | |
| CN113422881B (en) | Sweep and swing combined low-overlap laser communication scanning and capturing device and method | |
| CN115291331A (en) | Optical fiber nutation coupling design method applied to space optical communication and without nutation mirror |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |