CN113957399A - Control method of magnetron sputtering coating system - Google Patents
Control method of magnetron sputtering coating system Download PDFInfo
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- CN113957399A CN113957399A CN202111079049.7A CN202111079049A CN113957399A CN 113957399 A CN113957399 A CN 113957399A CN 202111079049 A CN202111079049 A CN 202111079049A CN 113957399 A CN113957399 A CN 113957399A
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- magnetron sputtering
- sputtering coating
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- argon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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Abstract
The invention discloses a control method of a magnetron sputtering coating system, which comprises a central processing unit, wherein the central processing unit is connected with a controller, the controller is connected with a control valve, a power supply controller, a detection device and an air pressure controller, the detection device comprises an air pressure detector and an electric power detector, the air pressure detector detects the air pressure of a magnetron sputtering coating machine, the electric power detector detects the ionization current in the magnetron sputtering coating machine, the power supply controller is provided with an anode and a cathode, the anode ionizes positive ions, the cathode ionizes negative ions, and the anode is positioned between a substrate and a target material. The invention relates to a control method of a magnetron sputtering coating system, belonging to the field of magnetron sputtering coating, wherein a current detector is used for monitoring and feeding back the power parameters of the magnetron sputtering coating machine in real time so as to know the ionization parameters of the magnetron sputtering coating machine in time, and a detection device arranged in the system is used for adjusting incident particles by adjusting current.
Description
Technical Field
The invention relates to the field of magnetron sputtering coating, in particular to a control method of a magnetron sputtering coating system.
Background
Magnetron sputtering is one of Physical Vapor Deposition (PVD), and a general sputtering method can be used for preparing multi-materials such as metals, semiconductors, insulators, and the like, and has the advantages of simple equipment, easy control, large film coating area, strong adhesion, and the like. Generally, low-voltage inert gas glow discharge is utilized to generate incident ions, a cathode target is made of a coating material, a substrate is used as an anode, argon or other inert gases are introduced into a vacuum chamber, glow discharge is generated under the action of cathode (target) 1-3KV direct current negative high voltage or radio frequency voltage of 13.56MHz, ionized argon ions bombard the surface of the target, target atoms are sputtered and deposited on the substrate to form a film, and the sputtering method is various, and mainly comprises secondary sputtering, tertiary or quaternary sputtering, magnetron sputtering, opposite target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering and the like. The existing magnetron sputtering coating has certain disadvantages, and firstly, when the magnetron sputtering coating is controlled, the current and voltage for controlling the coating are not accurately controlled, and a corresponding feedback mechanism is not provided, so that ionized ions are not easy to control, the parameters are inconvenient to adjust to modify the coating parameters, and a process of checking related parameters is lacked when the coating process is controlled.
Disclosure of Invention
The invention mainly aims to provide a control method of a magnetron sputtering coating system, which can effectively solve the problems that the current and voltage control for controlling the coating is inaccurate and a corresponding feedback mechanism is not available when the magnetron sputtering coating is controlled in the background technology, so that ionized ions are not easy to control, the parameters are inconvenient to adjust to modify the coating parameters, and the process of checking related parameters is lacked when the coating process is controlled.
In order to achieve the purpose, the invention adopts the technical scheme that:
a magnetron sputtering coating system comprises a central processing unit, wherein the central processing unit is connected with a controller, the controller is connected with a control valve, a power supply controller, a detection device and an air pressure controller, the detection device comprises an air pressure detector and an electric power detector, the air pressure detector detects the air pressure of a magnetron sputtering coating machine, the electric power detector detects the ionization current in the magnetron sputtering coating machine, the power supply controller is provided with an anode and a cathode, the anode ionizes to form positive ions, the cathode ionizes to form negative ions, the anode is located between a substrate and a target, the negative ions are connected with the target, and the positive ions are ionized with process gas.
Preferably, the control valve controls the opening and closing of the vacuum gas pipe valve, the control valve is communicated with the process gas and the argon gas through a pipeline, the number of times of collision of sputtered atoms and argon gas molecules is greatly increased along with the increase of argon gas molecules, the energy of the sputtered atoms is greatly lost in the collision process, the number of particles reaching the substrate is reduced, the deposition rate is reduced, the air pressure in the magnetron sputtering film plating machine is detected through an air pressure detector in the detection device, the internal air pressure can be controlled, the air pressure in the magnetron sputtering film plating machine is ensured to meet the requirement when the film is plated in the interior, the electric power parameters of the magnetron sputtering film plating machine are monitored and fed back in real time through the current detector, and the ionization parameters of the magnetron sputtering film plating machine are known in time.
Preferably, the air pressure detector in the detection device works to enable the internal air pressure to be 1.3 multiplied by 10-3Pa, and the electric power detector detects ionization current and voltage during operation, and the sputtering power is kept at 100W.
Preferably, the positive ion transmission speed of the coating area of the substrate and the target material can be in the interval of 0-600 inches per minute.
A control method of a magnetron sputtering coating system comprises the following steps:
s1, early-stage preparation, namely preparing equipment to be used, electrifying a magnetron sputtering coating machine at the moment, introducing process gas into the magnetron sputtering coating machine, and monitoring related parameters of air pressure and voltage in the magnetron sputtering coating machine;
s2, ionizing the gas, and ionizing the filled argon to ionize the argon into positive ions and negative ions so as to form gas positive ions and gas negative ions between the target and the substrate;
s3, bombarding the surface of the target material by argon positive ions, accelerating the argon positive ions to fly to a cathode target under the action of an electric field through electrons under the action of the electric field, and bombarding the surface of the target material through high energy so as to sputter the target material;
s4, gradually weakening the energy of the incident particles to generate scattering, wherein the time consumed by the energy of electrons of the incident particles is used up in the collision process, so that the energy of the electrons is reduced when the electrons are transferred to target atoms, and the energy transferred to the substrate is smaller;
s5, the relevant parameter of adjustment incident particle revises the coating film parameter, through the gas current of adjustment incident particle, make incident particle produce more and less ionization particle, thereby make the coating film more even intact, through the detection device who sets up in the system, adjust incident particle through the adjustment current, thereby the electric current reduces so that the energy of incident particle weakens gradually and takes place the scattering, incident particle is at the collision in-process, electron energy consumes almost completely, make electron energy step-down when transmitting the target atom, the energy of transmitting the substrate is less.
S6, completing film coating, closing the radio frequency power supply and the argon valve after the film coating is completed, closing the ionization vacuum gauge, and finally closing the main power supply.
Preferably, the vacuum treatment is performed under a magnetron sputtering coating machine in S1, and argon gas with the pressure of 1-10Pa is applied in the magnetron sputtering coating machine in S2.
Preferably, a strong magnet is placed at the rear end of the cathode target in the targets of S2 and S3.
Compared with the prior art, the invention has the following beneficial effects: the magnetron sputtering coating system and the control method comprise the following steps:
the system is provided with a detection device, the air pressure in the magnetron sputtering coating machine is detected by an air pressure detector in the detection device, so that the internal air pressure can be controlled, the air pressure in the interior is ensured to meet the requirement during coating, the electric power parameters of the magnetron sputtering coating machine are monitored and fed back in real time by a current detector, and the ionization parameters of the magnetron sputtering coating machine are known in time;
the relevant parameter of incident particle is adjusted when control and coating film parameter is revised, through the detection device who sets up in the system, adjusts incident particle through the adjustment current, thereby the electric current reduces and makes incident particle's energy weaken gradually and take place the scattering, and incident particle is at the collision in-process, and electron energy consumes time and ends up for electron energy step-down when transmitting the target atom for the electron, and the energy of transmitting to the substrate is less.
Drawings
FIG. 1 is a system diagram of a magnetron sputtering coating system control method of the present invention;
FIG. 2 is a control flow chart of the control method of the magnetron sputtering coating system of the invention.
Detailed Description
In order to make the technical means, the original characteristics, the achieved purposes and the effects of the invention easy to understand, the invention is further explained in the following with the specific embodiments, and the specific meanings of the above terms in the invention can be understood by those of ordinary skill in the art.
As shown in fig. 1-2, a magnetron sputtering coating system includes a central processing unit connected to a controller, the controller is connected to a control valve, a power supply controller, a detection device and an air pressure controller, the detection device includes an air pressure detector and an electric power detector, the air pressure detector detects air pressure of a magnetron sputtering coating machine, the electric power detector detects ionization current in the magnetron sputtering coating machine, the power supply controller is provided with an anode and a cathode, the anode ionizes positive ions, the cathode ionizes negative ions, the anode is located between a substrate and a target, the negative ions are connected to the target, and the positive ions are ionized with a process gas.
Preferably, the control valve controls the opening and closing of the vacuum gas pipe valve, and is communicated with the process gas and the argon gas through a pipeline, along with the increase of argon gas molecules, the collision frequency of sputtered atoms and the argon gas molecules is greatly increased, the energy of the sputtered atoms is greatly lost in the collision process, so that the number of particles reaching the substrate is reduced, and the deposition rate is reduced.
Preferably, the air pressure detector in the detection device operates to make the internal air pressure at 1.3 × 10-3Pa, the electric power detector detects the ionization current and voltage during operation, and the sputtering power is maintained at 100W.
Preferably, the positive ion transmission speed of the coating area of the substrate and the target material can be in the interval of 0-600 inches per minute.
A control method of a magnetron sputtering coating system comprises the following steps:
s1, early-stage preparation, namely preparing equipment to be used, electrifying a magnetron sputtering coating machine at the moment, introducing process gas into the magnetron sputtering coating machine, and monitoring related parameters of air pressure and voltage in the magnetron sputtering coating machine;
s2, ionizing the gas, and ionizing the filled argon to ionize the argon into positive ions and negative ions so as to form gas positive ions and gas negative ions between the target and the substrate;
s3, bombarding the surface of the target material by argon positive ions, accelerating the argon positive ions to fly to a cathode target under the action of an electric field through electrons under the action of the electric field, and bombarding the surface of the target material through high energy so as to sputter the target material;
s4, gradually weakening the energy of the incident particles to generate scattering, wherein the time consumed by the energy of electrons of the incident particles is used up in the collision process, so that the energy of the electrons is reduced when the electrons are transferred to target atoms, and the energy transferred to the substrate is smaller;
s5, relevant parameters of the incident particles are adjusted to modify coating parameters, and the incident particles generate more and less ionized particles by adjusting the gas current of the incident particles, so that the coating is uniform and complete.
S6, completing film coating, closing the radio frequency power supply and the argon valve after the film coating is completed, closing the ionization vacuum gauge, and finally closing the main power supply.
Preferably, the vacuum treatment is performed under a magnetron sputtering coating machine in S1, and argon gas with the pressure of 1-10Pa is applied in the magnetron sputtering coating machine in S2.
Preferably, a strong magnet is placed at the rear end of the cathode target in the targets of S2 and S3.
The invention is a magnetron sputtering coating system control method, the system is controlled by a central processor, a control valve is controlled by a controller, so that the process gas can be controlled according to the requirement, argon gas is controlled, air pressure is controlled, the current and voltage of the magnetron sputtering coating machine during ionization can be known in real time by a newly arranged air pressure detector and an electric power detector, positive ions and negative ions can be ionized by the electric power controller, the target material is bombarded between a substrate and the target material by oxygen positive ions, the argon positive ions are accelerated to fly to a cathode target under the action of the electric field by electrons under the action of the electric field, the surface of the target material is bombarded by high energy, the target material is sputtered, target atoms can be sputtered and deposited on the substrate to form a film, and incident particles are in the collision process, the electron energy consumes almost completely when spending time for electron energy step down when transmitting the target atom for the electron, the energy of transmitting for the substrate is less, current or voltage when ionization detector through detection device detects the ionization can adjust incident particle's relevant parameter when the bombardment and revise the coating film parameter, thereby make the parameter of coating film reach the requirement that will, through closing radio frequency power supply and closing the argon gas valve after the coating film is accomplished, close ionization vacuum gauge, close the total power supply at last.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A magnetron sputtering coating system is characterized in that: the device comprises a central processing unit, wherein the central processing unit is connected with a controller, the controller is connected with a control valve, a power supply controller, a detection device and an air pressure controller, the detection device comprises an air pressure detector and an electric power detector, the air pressure detector detects the air pressure of a magnetron sputtering coating machine, the electric power detector detects the ionization current in the magnetron sputtering coating machine, the power supply controller is provided with an anode and a cathode, the anode ionizes to form positive ions, the cathode ionizes to form negative ions, the anode is positioned between a substrate and a target, the negative ions are connected with the target, and the positive ions are ionized with process gases.
2. The magnetron sputtering coating system according to claim 1, wherein: the control valve controls the opening and closing of the vacuum gas pipe valve, the control valve is communicated with the process gas and the argon gas through a pipeline, the collision frequency of the sputtered atoms and the argon gas molecules is greatly increased along with the increase of the argon gas molecules, the energy of the sputtered atoms is greatly lost in the collision process, the number of particles reaching the substrate is reduced, and the deposition rate is reduced.
3. The magnetron sputtering coating system according to claim 1, wherein: when an air pressure detector in the detection device works, the internal air pressure is 1.3 multiplied by 10-3Pa, and the electric power detector detects ionization current and voltage during operation, and the sputtering power is kept at 100W.
4. The magnetron sputtering coating system according to claim 1, wherein: the positive ion transmission speed of the coating region of the substrate and target may be in the range of 0-600 inches per minute.
5. A control method of a magnetron sputtering coating system is characterized by comprising the following steps:
s1, early-stage preparation, namely preparing equipment to be used, electrifying a magnetron sputtering coating machine at the moment, introducing process gas into the magnetron sputtering coating machine, and monitoring related parameters of air pressure and voltage in the magnetron sputtering coating machine;
s2, ionizing the gas, and ionizing the filled argon to ionize the argon into positive ions and negative ions so as to form gas positive ions and gas negative ions between the target and the substrate;
s3, bombarding the surface of the target material by argon positive ions, accelerating the argon positive ions to fly to a cathode target under the action of an electric field through electrons under the action of the electric field, and bombarding the surface of the target material through high energy so as to sputter the target material;
s4, gradually weakening the energy of the incident particles to generate scattering, wherein the time consumed by the energy of electrons of the incident particles is used up in the collision process, so that the energy of the electrons is reduced when the electrons are transferred to target atoms, and the energy transferred to the substrate is smaller;
s5, relevant parameters of the incident particles are adjusted to modify coating parameters, and the incident particles generate more and less ionized particles by adjusting the gas current of the incident particles, so that the coating is uniform and complete.
S6, completing film coating, closing the radio frequency power supply and the argon valve after the film coating is completed, closing the ionization vacuum gauge, and finally closing the main power supply.
6. The control method of the magnetron sputtering coating system according to claim 5, characterized in that: and performing vacuum treatment under the magnetron sputtering coating machine in the step S1, wherein argon gas with the pressure of 1-10Pa is used in the magnetron sputtering coating machine in the step S2.
7. The control method of the magnetron sputtering coating system according to claim 5, characterized in that: and a strong magnet is arranged at the rear end of the cathode target in the S2 and S3 targets.
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| CN202111079049.7A CN113957399A (en) | 2021-09-15 | 2021-09-15 | Control method of magnetron sputtering coating system |
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| CN202111079049.7A CN113957399A (en) | 2021-09-15 | 2021-09-15 | Control method of magnetron sputtering coating system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117127162A (en) * | 2023-08-29 | 2023-11-28 | 浙江积嘉光电有限公司 | Coating monitoring method, device and system in magnetron sputtering coating |
| CN117364043A (en) * | 2023-10-20 | 2024-01-09 | 深圳金迈克精密科技有限公司 | Aluminum alloy PVD fluidization process |
-
2021
- 2021-09-15 CN CN202111079049.7A patent/CN113957399A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117127162A (en) * | 2023-08-29 | 2023-11-28 | 浙江积嘉光电有限公司 | Coating monitoring method, device and system in magnetron sputtering coating |
| CN117127162B (en) * | 2023-08-29 | 2024-02-09 | 浙江积嘉光电有限公司 | Coating monitoring method, device and system in magnetron sputtering coating |
| CN117364043A (en) * | 2023-10-20 | 2024-01-09 | 深圳金迈克精密科技有限公司 | Aluminum alloy PVD fluidization process |
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