GB2434159B - Electropolishing electrolyte and method for planarizing a metal layer using the same - Google Patents

Electropolishing electrolyte and method for planarizing a metal layer using the same

Info

Publication number
GB2434159B
GB2434159B GB0707076A GB0707076A GB2434159B GB 2434159 B GB2434159 B GB 2434159B GB 0707076 A GB0707076 A GB 0707076A GB 0707076 A GB0707076 A GB 0707076A GB 2434159 B GB2434159 B GB 2434159B
Authority
GB
United Kingdom
Prior art keywords
planarizing
same
metal layer
electropolishing electrolyte
electropolishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0707076A
Other languages
English (en)
Other versions
GB0707076D0 (en
GB2434159A (en
Inventor
Jia Min Shieh
Sue Hong Liu
Dai Bou Tong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of GB0707076D0 publication Critical patent/GB0707076D0/en
Publication of GB2434159A publication Critical patent/GB2434159A/en
Application granted granted Critical
Publication of GB2434159B publication Critical patent/GB2434159B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/12—Working media
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Weting (AREA)
  • Fuel Cell (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB0707076A 2004-10-06 2005-10-01 Electropolishing electrolyte and method for planarizing a metal layer using the same Expired - Fee Related GB2434159B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093130211A TWI294923B (en) 2004-10-06 2004-10-06 Electropolishing electrolyte and method for planarizing a metal layer using the same
PCT/EP2005/010628 WO2006037584A1 (en) 2004-10-06 2005-10-01 Electropolishing electrolyte and method for planarizing a metal layer using the same

Publications (3)

Publication Number Publication Date
GB0707076D0 GB0707076D0 (en) 2007-05-23
GB2434159A GB2434159A (en) 2007-07-18
GB2434159B true GB2434159B (en) 2009-05-06

Family

ID=35636650

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0707076A Expired - Fee Related GB2434159B (en) 2004-10-06 2005-10-01 Electropolishing electrolyte and method for planarizing a metal layer using the same

Country Status (13)

Country Link
US (1) US7501051B2 (de)
EP (1) EP1935013A1 (de)
JP (1) JP2008516083A (de)
KR (1) KR20070061579A (de)
AT (1) AT503087A2 (de)
CH (1) CH698385B1 (de)
DE (1) DE112005002414T5 (de)
GB (1) GB2434159B (de)
IL (1) IL182224A0 (de)
MY (1) MY141248A (de)
RU (1) RU2007116697A (de)
TW (1) TWI294923B (de)
WO (1) WO2006037584A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100783006B1 (ko) * 2007-08-09 2007-12-07 신승균 동 도금된 마그네슘합금 및 그 형성방법
SI2504469T1 (sl) * 2009-11-23 2018-11-30 Metcon, Llc Postopki elektropoliranja
US8580103B2 (en) 2010-11-22 2013-11-12 Metcon, Llc Electrolyte solution and electrochemical surface modification methods
CN102337569B (zh) * 2011-09-19 2014-06-11 华南理工大学 一种钴-钨纳米合金镀层及其制备方法
RU2471595C1 (ru) * 2011-12-07 2013-01-10 Открытое акционерное общество "Научно-производственное объединение "Сатурн" Электролит для электрохимической обработки
KR101464860B1 (ko) * 2013-02-06 2014-11-24 인천대학교 산학협력단 알릴 알콜을 포함하는 금속 씨앗층 평탄제 및 이를 이용한 씨앗층의 형성방법
US9648723B2 (en) 2015-09-16 2017-05-09 International Business Machines Corporation Process of fabricating printed circuit board
WO2020138976A1 (ko) * 2018-12-26 2020-07-02 한양대학교에리카산학협력단 반도체 소자의 제조 방법
DE102020200815A1 (de) 2020-01-23 2021-07-29 Mahle International Gmbh Zusammensetzung als Elektrolyt zum Auflösen und/oder Abscheiden von Metallen, Metalloxiden und/oder Metalllegierungen sowie Verwendungen dieser Zusammensetzung
KR102258702B1 (ko) 2020-09-07 2021-06-01 주식회사 근우 전기 전도율 향상을 위한 표면 구조를 가지는 버스바
KR102258703B1 (ko) 2020-09-07 2021-06-01 주식회사 근우 전기 전도율 향상을 위한 표면구조를 가지는 버스바 제조방법
US20230290899A1 (en) * 2020-11-30 2023-09-14 Korea Institute Of Science And Technology Method for planarizing cis-based thin film, cis-based thin film manufactured using the same, and solar cell comprising cis-based thin film
US11447887B2 (en) * 2020-12-10 2022-09-20 Saudi Arabian Oil Company Surface smoothing of copper by electropolishing
US11512400B2 (en) 2020-12-10 2022-11-29 Saudi Arabian Oil Company Electrochemical reduction of carbon dioxide
CN113337877A (zh) * 2021-05-17 2021-09-03 安徽昀水表面科技有限公司 一种电解抛光药水及电解抛光加工工艺
US11718575B2 (en) 2021-08-12 2023-08-08 Saudi Arabian Oil Company Methanol production via dry reforming and methanol synthesis in a vessel
US11578016B1 (en) 2021-08-12 2023-02-14 Saudi Arabian Oil Company Olefin production via dry reforming and olefin synthesis in a vessel
US11787759B2 (en) 2021-08-12 2023-10-17 Saudi Arabian Oil Company Dimethyl ether production via dry reforming and dimethyl ether synthesis in a vessel
US11617981B1 (en) 2022-01-03 2023-04-04 Saudi Arabian Oil Company Method for capturing CO2 with assisted vapor compression

Citations (6)

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Publication number Priority date Publication date Assignee Title
US2953507A (en) * 1952-10-09 1960-09-20 Schwarzkopf Dev Co Method for electrolytic thickness reduction of metal wires
US3945893A (en) * 1972-12-30 1976-03-23 Suzuki Motor Company Limited Process for forming low-abrasion surface layers on metal objects
SU779453A1 (ru) * 1978-04-24 1980-11-15 Ленинградский Институт Ядерной Физики Им. Б.П.Константинова Ан Ссср Раствор дл электрохимического полировани металлической поверхности
EP1167585A2 (de) * 2000-06-29 2002-01-02 Ebara Corporation Verfahren und Apparat zur Herstellung von Verbindungsleitungen, Polierflüssigkeit und Polierverfahren
US20030087528A1 (en) * 1997-09-30 2003-05-08 Sez Semiconductor-Equipment Zubehor Fur Die Halble Process for planarizing substrates of semiconductor technology
US20030221974A1 (en) * 2002-06-04 2003-12-04 Jia-Min Shieh Electrolytic solution formulation for electropolishing process

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US4920361A (en) * 1987-06-26 1990-04-24 Canon Kabushiki Kaisha Image recording method and apparatus therefor
US5066370A (en) * 1990-09-07 1991-11-19 International Business Machines Corporation Apparatus, electrochemical process, and electrolyte for microfinishing stainless steel print bands
JP2649625B2 (ja) 1991-12-10 1997-09-03 株式会社 ケミカル山本 含クロム合金鋼の電解琢磨用電解液
FR2747399B1 (fr) 1996-04-12 1998-05-07 Commissariat Energie Atomique Electrolyte pour l'electropolissage, procede d'electropolissage d'un acier inoxydable ou d'un alliage de nickel mettant en oeuvre cet electrolyte, et son application a la decontamination
US6491808B2 (en) * 1997-09-11 2002-12-10 Canon Kabushiki Kaisha Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2953507A (en) * 1952-10-09 1960-09-20 Schwarzkopf Dev Co Method for electrolytic thickness reduction of metal wires
US3945893A (en) * 1972-12-30 1976-03-23 Suzuki Motor Company Limited Process for forming low-abrasion surface layers on metal objects
SU779453A1 (ru) * 1978-04-24 1980-11-15 Ленинградский Институт Ядерной Физики Им. Б.П.Константинова Ан Ссср Раствор дл электрохимического полировани металлической поверхности
US20030087528A1 (en) * 1997-09-30 2003-05-08 Sez Semiconductor-Equipment Zubehor Fur Die Halble Process for planarizing substrates of semiconductor technology
EP1167585A2 (de) * 2000-06-29 2002-01-02 Ebara Corporation Verfahren und Apparat zur Herstellung von Verbindungsleitungen, Polierflüssigkeit und Polierverfahren
US20030221974A1 (en) * 2002-06-04 2003-12-04 Jia-Min Shieh Electrolytic solution formulation for electropolishing process

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Bing Du et al; "Mechanistic studies of Cu electropolishing in phosoporic acid electrolytes" Journal of the Electrochemical Society, Electrochem Soc USA, Vol 151, No. 6, June 2004 (2004-06) Pages C375-C378, XP 002364929 ISSN: 0013-4651 page C375; table I *
Lee CH et al; "Electroxidation of methanol on Pt-Ru catalytsts supported by basal plane graphite in phosphoric acid solution" Journal of Power Sources, Elsevier, vol 86, No1-2, March 2000 (2000-03), pages 478-481, XP004194162 ISSN: 0378-7753 page 479, left hand column *
Shih-Chieh Chang et al: "Superpolishing for planarising copper damascene interconnects" Electrochemical and Solid-state Letters, Electrochem, SOC USA, Vol 6, no 5, May 2003 (2003-05), pages G72-G74, XP002364930 ISSN: 1099-0062 the whole document *

Also Published As

Publication number Publication date
KR20070061579A (ko) 2007-06-13
US20060070888A1 (en) 2006-04-06
DE112005002414T5 (de) 2007-09-27
EP1935013A1 (de) 2008-06-25
MY141248A (en) 2010-03-31
JP2008516083A (ja) 2008-05-15
TWI294923B (en) 2008-03-21
TW200611998A (en) 2006-04-16
US7501051B2 (en) 2009-03-10
WO2006037584A1 (en) 2006-04-13
AT503087A2 (de) 2007-07-15
IL182224A0 (en) 2007-09-20
CH698385B1 (de) 2009-07-31
GB0707076D0 (en) 2007-05-23
RU2007116697A (ru) 2008-11-20
GB2434159A (en) 2007-07-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20101001