GB2423084A - Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same - Google Patents

Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Download PDF

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Publication number
GB2423084A
GB2423084A GB0607259A GB0607259A GB2423084A GB 2423084 A GB2423084 A GB 2423084A GB 0607259 A GB0607259 A GB 0607259A GB 0607259 A GB0607259 A GB 0607259A GB 2423084 A GB2423084 A GB 2423084A
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GB
United Kingdom
Prior art keywords
silicon
low temperature
containing films
monosilane
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0607259A
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English (en)
Other versions
GB0607259D0 (en
Inventor
Ziyun Wang
Chongying Xu
Thomas H Baum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of GB0607259D0 publication Critical patent/GB0607259D0/en
Publication of GB2423084A publication Critical patent/GB2423084A/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/025—Silicon compounds without C-silicon linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
GB0607259A 2003-10-10 2004-10-06 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Withdrawn GB2423084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/683,501 US7579496B2 (en) 2003-10-10 2003-10-10 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
PCT/US2004/032843 WO2005038871A2 (en) 2003-10-10 2004-10-06 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

Publications (2)

Publication Number Publication Date
GB0607259D0 GB0607259D0 (en) 2006-05-17
GB2423084A true GB2423084A (en) 2006-08-16

Family

ID=34422750

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0607259A Withdrawn GB2423084A (en) 2003-10-10 2004-10-06 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

Country Status (4)

Country Link
US (4) US7579496B2 (https=)
JP (1) JP2007508307A (https=)
GB (1) GB2423084A (https=)
WO (1) WO2005038871A2 (https=)

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US7579496B2 (en) 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US7601860B2 (en) * 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
US20050227017A1 (en) * 2003-10-31 2005-10-13 Yoshihide Senzaki Low temperature deposition of silicon nitride
US8101788B2 (en) * 2006-09-29 2012-01-24 Air Liquide Electronics U.S. Lp Silicon precursors and method for low temperature CVD of silicon-containing films
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WO2009006272A1 (en) * 2007-06-28 2009-01-08 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8889235B2 (en) * 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
KR101085242B1 (ko) 2010-03-17 2011-11-22 엘에스엠트론 주식회사 실란 커플링제, 이를 포함하는 동박 및 그 표면처리방법
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
NL2009754C2 (en) 2012-11-05 2014-05-08 M4Si B V Protective cover for a copper containing conductor.
JP5925673B2 (ja) * 2012-12-27 2016-05-25 東京エレクトロン株式会社 シリコン膜の成膜方法および成膜装置
US9796739B2 (en) * 2013-06-26 2017-10-24 Versum Materials Us, Llc AZA-polysilane precursors and methods for depositing films comprising same
TW201522696A (zh) 2013-11-01 2015-06-16 應用材料股份有限公司 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜
US11549181B2 (en) 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
US20150303060A1 (en) 2014-04-16 2015-10-22 Samsung Electronics Co., Ltd. Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
TWI716333B (zh) 2015-03-30 2021-01-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
TWI724141B (zh) * 2016-03-23 2021-04-11 法商液態空氣喬治斯克勞帝方法硏究開發股份有限公司 形成含矽膜之組成物及其製法與用途
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
CN108059133A (zh) * 2017-12-11 2018-05-22 宁波爱克创威新材料科技有限公司 纳米氮化硅及其制备方法
US11186909B2 (en) * 2019-08-26 2021-11-30 Applied Materials, Inc. Methods of depositing low-K films
US11492364B2 (en) 2020-03-31 2022-11-08 Entegris, Inc. Silicon hydrazido precursor compounds
US11447865B2 (en) 2020-11-17 2022-09-20 Applied Materials, Inc. Deposition of low-κ films
US20220238330A1 (en) * 2021-01-26 2022-07-28 Entegris, Inc. High throughput deposition process

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NOT YET ADVISED *

Also Published As

Publication number Publication date
GB0607259D0 (en) 2006-05-17
JP2007508307A (ja) 2007-04-05
WO2005038871A3 (en) 2006-08-31
WO2005038871A2 (en) 2005-04-28
US20120156894A1 (en) 2012-06-21
US7863203B2 (en) 2011-01-04
US8242032B2 (en) 2012-08-14
US20050080285A1 (en) 2005-04-14
US8541318B2 (en) 2013-09-24
US20110165762A1 (en) 2011-07-07
US7579496B2 (en) 2009-08-25
US20080160174A1 (en) 2008-07-03

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