GB2403079B - Dynamic reference voltage calibration integrated in ferams - Google Patents

Dynamic reference voltage calibration integrated in ferams

Info

Publication number
GB2403079B
GB2403079B GB0410112A GB0410112A GB2403079B GB 2403079 B GB2403079 B GB 2403079B GB 0410112 A GB0410112 A GB 0410112A GB 0410112 A GB0410112 A GB 0410112A GB 2403079 B GB2403079 B GB 2403079B
Authority
GB
United Kingdom
Prior art keywords
ferams
reference voltage
dynamic reference
voltage calibration
calibration integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0410112A
Other languages
English (en)
Other versions
GB0410112D0 (en
GB2403079A (en
Inventor
Juergen T Rickes
Yacoub Mustafa
Hugh P Mcadams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Texas Instruments Inc
Original Assignee
Agilent Technologies Inc
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc, Texas Instruments Inc filed Critical Agilent Technologies Inc
Publication of GB0410112D0 publication Critical patent/GB0410112D0/en
Publication of GB2403079A publication Critical patent/GB2403079A/en
Application granted granted Critical
Publication of GB2403079B publication Critical patent/GB2403079B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2254—Calibration

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
GB0410112A 2003-05-20 2004-05-06 Dynamic reference voltage calibration integrated in ferams Expired - Fee Related GB2403079B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/442,360 US6804141B1 (en) 2003-05-20 2003-05-20 Dynamic reference voltage calibration integrated FeRAMS

Publications (3)

Publication Number Publication Date
GB0410112D0 GB0410112D0 (en) 2004-06-09
GB2403079A GB2403079A (en) 2004-12-22
GB2403079B true GB2403079B (en) 2006-01-11

Family

ID=32508074

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0410112A Expired - Fee Related GB2403079B (en) 2003-05-20 2004-05-06 Dynamic reference voltage calibration integrated in ferams

Country Status (3)

Country Link
US (1) US6804141B1 (enExample)
JP (1) JP4614689B2 (enExample)
GB (1) GB2403079B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8324667B2 (en) * 2004-01-05 2012-12-04 International Business Machines Corporation Amplifiers using gated diodes
JP4119397B2 (ja) * 2004-04-23 2008-07-16 Ｎｅｃエレクトロニクス株式会社 異常検出回路
US7395466B2 (en) * 2005-12-30 2008-07-01 Intel Corporation Method and apparatus to adjust voltage for storage location reliability
KR100871673B1 (ko) * 2006-12-22 2008-12-05 삼성전자주식회사 반도체 메모리 장치의 센스 앰프 회로 및 그 동작 방법
US20080270854A1 (en) 2007-04-24 2008-10-30 Micron Technology, Inc. System and method for running test and redundancy analysis in parallel
EP2067841A1 (en) * 2007-12-06 2009-06-10 Agfa HealthCare NV X-Ray imaging photostimulable phosphor screen or panel.
CN101981561A (zh) * 2008-03-27 2011-02-23 通用电气医疗集团生物科学生物方法公司 防止未经授权操作相关联一次性生物过程组件的可伽马灭菌的rfid系统
JP5676842B2 (ja) * 2008-05-30 2015-02-25 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
US7898838B2 (en) * 2008-10-31 2011-03-01 Seagate Technology Llc Resistive sense memory calibration for self-reference read method
US8582374B2 (en) * 2009-12-15 2013-11-12 Intel Corporation Method and apparatus for dynamically adjusting voltage reference to optimize an I/O system
US8780104B2 (en) 2011-03-15 2014-07-15 Qualcomm Mems Technologies, Inc. System and method of updating drive scheme voltages
US8804438B2 (en) * 2012-08-04 2014-08-12 Freescale Semiconductor, Inc. Memory device
TWI550631B (zh) * 2014-08-04 2016-09-21 瑞昱半導體股份有限公司 記憶體控制電路及相關的記憶體控制方法
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
KR102508532B1 (ko) * 2016-05-02 2023-03-09 삼성전자주식회사 감지 증폭기 및 이를 포함하는 메모리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010061358A (ko) * 1999-12-28 2001-07-07 박종섭 강유전체 메모리 장치에서의 기준 전압 생성 장치 및 그생성 방법
US20020093847A1 (en) * 2001-01-18 2002-07-18 Rohm Co., Ltd. Ferroelectric storage device
US20030031059A1 (en) * 2000-11-21 2003-02-13 Fujitsu Limited Semiconductor integrated circuit device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07192476A (ja) * 1993-12-27 1995-07-28 Hitachi Ltd 強誘電体メモリ
JPH11273360A (ja) * 1998-03-17 1999-10-08 Toshiba Corp 強誘電体記憶装置
US6392916B1 (en) * 1999-10-01 2002-05-21 Samsung Electronics Co., Ltd. Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
JP2001291385A (ja) * 2000-04-05 2001-10-19 Nec Corp 半導体記憶装置並びにその試験装置および試験方法
US6754094B2 (en) * 2002-01-31 2004-06-22 Stmicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
US6704218B2 (en) * 2002-04-02 2004-03-09 Agilent Technologies, Inc. FeRAM with a single access/multiple-comparison operation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010061358A (ko) * 1999-12-28 2001-07-07 박종섭 강유전체 메모리 장치에서의 기준 전압 생성 장치 및 그생성 방법
US20030031059A1 (en) * 2000-11-21 2003-02-13 Fujitsu Limited Semiconductor integrated circuit device
US20020093847A1 (en) * 2001-01-18 2002-07-18 Rohm Co., Ltd. Ferroelectric storage device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"A 0.4 um 3.3V 1T1C 4MB Non-Volatile Ferroelectric RAM with Fixed Bitline Reference Voltage Scheme and Data Protection Circuit" Byung-Gil, Jeon et al.. IEEE Journal of Solid State Circuits. Vol 35, No 11. November 2000 *

Also Published As

Publication number Publication date
JP4614689B2 (ja) 2011-01-19
GB0410112D0 (en) 2004-06-09
US6804141B1 (en) 2004-10-12
GB2403079A (en) 2004-12-22
JP2004348953A (ja) 2004-12-09

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100506