GB2372629B - Apparatus for detecting defects in semiconductor devices and methods of using the same - Google Patents

Apparatus for detecting defects in semiconductor devices and methods of using the same

Info

Publication number
GB2372629B
GB2372629B GB0124937A GB0124937A GB2372629B GB 2372629 B GB2372629 B GB 2372629B GB 0124937 A GB0124937 A GB 0124937A GB 0124937 A GB0124937 A GB 0124937A GB 2372629 B GB2372629 B GB 2372629B
Authority
GB
United Kingdom
Prior art keywords
methods
same
semiconductor devices
detecting defects
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0124937A
Other languages
English (en)
Other versions
GB2372629A (en
GB0124937D0 (en
Inventor
Yang-Hyong Kim
Hyo-Cheon Kang
Deok-Yong Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0124937D0 publication Critical patent/GB0124937D0/en
Publication of GB2372629A publication Critical patent/GB2372629A/en
Application granted granted Critical
Publication of GB2372629B publication Critical patent/GB2372629B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266—Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy
    • H01J37/268—Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Tests Of Electronic Circuits (AREA)
GB0124937A 2000-11-23 2001-10-17 Apparatus for detecting defects in semiconductor devices and methods of using the same Expired - Fee Related GB2372629B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000070009A KR100351059B1 (ko) 2000-11-23 2000-11-23 반도체 소자의 전기적 결함 검사 장치, 이를 이용한 반도체 소자의 전기적 결함 검사 방법

Publications (3)

Publication Number Publication Date
GB0124937D0 GB0124937D0 (en) 2001-12-05
GB2372629A GB2372629A (en) 2002-08-28
GB2372629B true GB2372629B (en) 2003-04-23

Family

ID=19700921

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0124937A Expired - Fee Related GB2372629B (en) 2000-11-23 2001-10-17 Apparatus for detecting defects in semiconductor devices and methods of using the same

Country Status (7)

Country Link
JP (1) JP3833928B2 (ko)
KR (1) KR100351059B1 (ko)
CN (1) CN1193419C (ko)
DE (1) DE10151127A1 (ko)
FR (1) FR2817621B1 (ko)
GB (1) GB2372629B (ko)
TW (1) TW503504B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004034043A2 (en) * 2002-10-08 2004-04-22 Applied Materials Israel, Ltd. Methods and systems for process monitoring using x-ray emission
KR100499160B1 (ko) * 2003-01-15 2005-07-01 삼성전자주식회사 웨이퍼의 검사 방법 및 웨이퍼의 검사 장치
US7402801B2 (en) 2005-04-12 2008-07-22 Umci Ltd Inspecting method of a defect inspection device
CN100403508C (zh) * 2005-06-29 2008-07-16 联华电子股份有限公司 缺陷检测元件及其检测和制造方法
KR100744234B1 (ko) * 2005-12-28 2007-07-30 동부일렉트로닉스 주식회사 반도체소자의 웰 접합간 누설 측정 방법
CN102193062B (zh) * 2010-03-19 2013-07-31 中芯国际集成电路制造(北京)有限公司 Pmos器件源漏泄漏缺陷的检测方法
CN101881687A (zh) * 2010-05-28 2010-11-10 上海宏力半导体制造有限公司 半导体制造平台的泄漏检测装置、其使用方法及其平台
CN103456655B (zh) * 2012-05-30 2016-03-23 南亚科技股份有限公司 半导体盲孔的检测方法
JP2015070195A (ja) * 2013-09-30 2015-04-13 ソニー株式会社 半導体装置および試験方法
KR102575017B1 (ko) * 2016-11-17 2023-09-05 삼성디스플레이 주식회사 유리 기판의 결함 검출 방법
KR102324622B1 (ko) * 2018-12-12 2021-11-12 어플라이드 머티리얼즈 이스라엘 리미티드 프로세스 모니터링

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0504944A2 (en) * 1991-03-22 1992-09-23 Nec Corporation Dynamic fault imaging system using electron beam and method of analyzing fault
US5986263A (en) * 1996-03-29 1999-11-16 Hitachi, Ltd. Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
US6067153A (en) * 1996-05-21 2000-05-23 Hitachi, Ltd. Pattern defect inspecting apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415851A (en) * 1981-05-26 1983-11-15 International Business Machines Corporation System for contactless testing of multi-layer ceramics
JP2907146B2 (ja) * 1996-09-11 1999-06-21 日本電気株式会社 メモリｌｓｉの特定箇所探索方法および探索装置
US6504393B1 (en) * 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
KR20000027700A (ko) * 1998-10-29 2000-05-15 이창세 웨이퍼의 전기적 특성에 영향을 미치는 결정 결함 측정 방법
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0504944A2 (en) * 1991-03-22 1992-09-23 Nec Corporation Dynamic fault imaging system using electron beam and method of analyzing fault
US5986263A (en) * 1996-03-29 1999-11-16 Hitachi, Ltd. Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
US6067153A (en) * 1996-05-21 2000-05-23 Hitachi, Ltd. Pattern defect inspecting apparatus

Also Published As

Publication number Publication date
JP3833928B2 (ja) 2006-10-18
KR100351059B1 (ko) 2002-09-05
CN1193419C (zh) 2005-03-16
TW503504B (en) 2002-09-21
JP2002228608A (ja) 2002-08-14
GB2372629A (en) 2002-08-28
FR2817621A1 (fr) 2002-06-07
GB0124937D0 (en) 2001-12-05
KR20020040092A (ko) 2002-05-30
DE10151127A1 (de) 2002-06-06
FR2817621B1 (fr) 2005-08-05
CN1355558A (zh) 2002-06-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20121017