GB0124937D0 - Apparatus for detecting defects in semiconductor devices and methods of using the same - Google Patents

Apparatus for detecting defects in semiconductor devices and methods of using the same

Info

Publication number
GB0124937D0
GB0124937D0 GBGB0124937.4A GB0124937A GB0124937D0 GB 0124937 D0 GB0124937 D0 GB 0124937D0 GB 0124937 A GB0124937 A GB 0124937A GB 0124937 D0 GB0124937 D0 GB 0124937D0
Authority
GB
United Kingdom
Prior art keywords
methods
same
semiconductor devices
detecting defects
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0124937.4A
Other versions
GB2372629B (en
GB2372629A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0124937D0 publication Critical patent/GB0124937D0/en
Publication of GB2372629A publication Critical patent/GB2372629A/en
Application granted granted Critical
Publication of GB2372629B publication Critical patent/GB2372629B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy
    • H01J37/268—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Tests Of Electronic Circuits (AREA)
GB0124937A 2000-11-23 2001-10-17 Apparatus for detecting defects in semiconductor devices and methods of using the same Expired - Fee Related GB2372629B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000070009A KR100351059B1 (en) 2000-11-23 2000-11-23 apparauts for detecting electrical defect in semiconductor device and electrical defect detection method of semiconductor device using the same

Publications (3)

Publication Number Publication Date
GB0124937D0 true GB0124937D0 (en) 2001-12-05
GB2372629A GB2372629A (en) 2002-08-28
GB2372629B GB2372629B (en) 2003-04-23

Family

ID=19700921

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0124937A Expired - Fee Related GB2372629B (en) 2000-11-23 2001-10-17 Apparatus for detecting defects in semiconductor devices and methods of using the same

Country Status (7)

Country Link
JP (1) JP3833928B2 (en)
KR (1) KR100351059B1 (en)
CN (1) CN1193419C (en)
DE (1) DE10151127A1 (en)
FR (1) FR2817621B1 (en)
GB (1) GB2372629B (en)
TW (1) TW503504B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100557431C (en) * 2002-10-08 2009-11-04 应用材料以色列公司 Use the method and the system of X-ray emission monitoring program
KR100499160B1 (en) * 2003-01-15 2005-07-01 삼성전자주식회사 Method for wafer inspection and apparatus for the same
US7402801B2 (en) 2005-04-12 2008-07-22 Umci Ltd Inspecting method of a defect inspection device
CN100403508C (en) * 2005-06-29 2008-07-16 联华电子股份有限公司 Defect detection component and detecting and producing method thereof
KR100744234B1 (en) * 2005-12-28 2007-07-30 동부일렉트로닉스 주식회사 Method for inspection well to well junction leakage
CN102193062B (en) * 2010-03-19 2013-07-31 中芯国际集成电路制造(北京)有限公司 Method for detecting source leakage defect of PMOS (P-channel metal oxide semiconductor) device
CN101881687A (en) * 2010-05-28 2010-11-10 上海宏力半导体制造有限公司 Leak detection device of semiconductor manufacturing platform as well as use method and platform thereof
CN103456655B (en) * 2012-05-30 2016-03-23 南亚科技股份有限公司 The detection method of semiconductor blind hole
JP2015070195A (en) * 2013-09-30 2015-04-13 ソニー株式会社 Semiconductor device and test method
KR102575017B1 (en) * 2016-11-17 2023-09-05 삼성디스플레이 주식회사 Detecting method for defect of glass substrate
KR102324622B1 (en) * 2018-12-12 2021-11-12 어플라이드 머티리얼즈 이스라엘 리미티드 Process monitoring

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415851A (en) * 1981-05-26 1983-11-15 International Business Machines Corporation System for contactless testing of multi-layer ceramics
EP0504944B1 (en) * 1991-03-22 1998-09-23 Nec Corporation Method of analyzing fault using electron beam
JPH09320505A (en) * 1996-03-29 1997-12-12 Hitachi Ltd Electron beam type inspecting method, device therefor, manufacture of semiconductor, and its manufacturing line
JPH09312318A (en) * 1996-05-21 1997-12-02 Hitachi Ltd Pattern defect inspection device
JP2907146B2 (en) * 1996-09-11 1999-06-21 日本電気株式会社 Method and apparatus for searching for specific part of memory LSI
US6504393B1 (en) * 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
KR20000027700A (en) * 1998-10-29 2000-05-15 이창세 Method for measuring crystal defect affecting electric characteristics of wafer
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection

Also Published As

Publication number Publication date
FR2817621A1 (en) 2002-06-07
DE10151127A1 (en) 2002-06-06
TW503504B (en) 2002-09-21
GB2372629B (en) 2003-04-23
CN1193419C (en) 2005-03-16
JP3833928B2 (en) 2006-10-18
GB2372629A (en) 2002-08-28
FR2817621B1 (en) 2005-08-05
KR20020040092A (en) 2002-05-30
CN1355558A (en) 2002-06-26
JP2002228608A (en) 2002-08-14
KR100351059B1 (en) 2002-09-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20121017