GB2351427B - Charged particle beam exposure apparatus and exposure method - Google Patents

Charged particle beam exposure apparatus and exposure method

Info

Publication number
GB2351427B
GB2351427B GB0024174A GB0024174A GB2351427B GB 2351427 B GB2351427 B GB 2351427B GB 0024174 A GB0024174 A GB 0024174A GB 0024174 A GB0024174 A GB 0024174A GB 2351427 B GB2351427 B GB 2351427B
Authority
GB
United Kingdom
Prior art keywords
charged particle
particle beam
exposure apparatus
exposure
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0024174A
Other languages
English (en)
Other versions
GB2351427A (en
GB0024174D0 (en
Inventor
Takamasa Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Publication of GB0024174D0 publication Critical patent/GB0024174D0/en
Publication of GB2351427A publication Critical patent/GB2351427A/en
Application granted granted Critical
Publication of GB2351427B publication Critical patent/GB2351427B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB0024174A 1999-02-03 2000-02-03 Charged particle beam exposure apparatus and exposure method Expired - Fee Related GB2351427B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11026386A JP2000223412A (ja) 1999-02-03 1999-02-03 荷電粒子ビーム露光装置及び露光方法
PCT/JP2000/000595 WO2000046846A1 (fr) 1999-02-03 2000-02-03 Appareil d'exposition à faisceau de particules chargées, et son procédé d'exposition

Publications (3)

Publication Number Publication Date
GB0024174D0 GB0024174D0 (en) 2000-11-15
GB2351427A GB2351427A (en) 2000-12-27
GB2351427B true GB2351427B (en) 2003-01-22

Family

ID=12192105

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0024174A Expired - Fee Related GB2351427B (en) 1999-02-03 2000-02-03 Charged particle beam exposure apparatus and exposure method

Country Status (5)

Country Link
JP (1) JP2000223412A (ja)
KR (1) KR20010042267A (ja)
DE (1) DE10080405T1 (ja)
GB (1) GB2351427B (ja)
WO (1) WO2000046846A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
GB2412494B (en) * 2002-01-17 2006-02-01 Ims Nanofabrication Gmbh Maskless particle-beam system for exposing a pattern on a substrate
JP5859778B2 (ja) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7128667B2 (ja) * 2018-06-12 2022-08-31 株式会社日立ハイテク 荷電粒子ビーム制御装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6315043U (ja) * 1986-07-15 1988-02-01
JPH07254549A (ja) * 1994-03-15 1995-10-03 Fujitsu Ltd 荷電粒子ビーム露光方法及び露光装置
US5546319A (en) * 1994-01-28 1996-08-13 Fujitsu Limited Method of and system for charged particle beam exposure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6315043U (ja) * 1986-07-15 1988-02-01
US5546319A (en) * 1994-01-28 1996-08-13 Fujitsu Limited Method of and system for charged particle beam exposure
US5719402A (en) * 1994-01-28 1998-02-17 Fujitsu Limited Method of and system for charged particle beam exposure
US5721432A (en) * 1994-01-28 1998-02-24 Fujitsu Limited Method of and system for charged particle beam exposure
US5965895A (en) * 1994-01-28 1999-10-12 Fujitsu Limited Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure
JPH07254549A (ja) * 1994-03-15 1995-10-03 Fujitsu Ltd 荷電粒子ビーム露光方法及び露光装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Japanese Utility Model Application No 108659/1986 (Laid-Open No JP-U-63 015 043) 1 February 1988 *

Also Published As

Publication number Publication date
GB2351427A (en) 2000-12-27
KR20010042267A (ko) 2001-05-25
DE10080405T1 (de) 2001-05-31
JP2000223412A (ja) 2000-08-11
WO2000046846A1 (fr) 2000-08-10
GB0024174D0 (en) 2000-11-15

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Legal Events

Date Code Title Description
789A Request for publication of translation (sect. 89(a)/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040203