GB0024174D0 - Charged particle beam exposure apparatus and exposure method - Google Patents

Charged particle beam exposure apparatus and exposure method

Info

Publication number
GB0024174D0
GB0024174D0 GBGB0024174.5A GB0024174A GB0024174D0 GB 0024174 D0 GB0024174 D0 GB 0024174D0 GB 0024174 A GB0024174 A GB 0024174A GB 0024174 D0 GB0024174 D0 GB 0024174D0
Authority
GB
United Kingdom
Prior art keywords
charged particle
particle beam
exposure apparatus
exposure
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0024174.5A
Other versions
GB2351427A (en
GB2351427B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Publication of GB0024174D0 publication Critical patent/GB0024174D0/en
Publication of GB2351427A publication Critical patent/GB2351427A/en
Application granted granted Critical
Publication of GB2351427B publication Critical patent/GB2351427B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB0024174A 1999-02-03 2000-02-03 Charged particle beam exposure apparatus and exposure method Expired - Fee Related GB2351427B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11026386A JP2000223412A (en) 1999-02-03 1999-02-03 Charged particle beam exposure system and exposure method
PCT/JP2000/000595 WO2000046846A1 (en) 1999-02-03 2000-02-03 Charged particle beam exposure apparatus and exposure method

Publications (3)

Publication Number Publication Date
GB0024174D0 true GB0024174D0 (en) 2000-11-15
GB2351427A GB2351427A (en) 2000-12-27
GB2351427B GB2351427B (en) 2003-01-22

Family

ID=12192105

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0024174A Expired - Fee Related GB2351427B (en) 1999-02-03 2000-02-03 Charged particle beam exposure apparatus and exposure method

Country Status (5)

Country Link
JP (1) JP2000223412A (en)
KR (1) KR20010042267A (en)
DE (1) DE10080405T1 (en)
GB (1) GB2351427B (en)
WO (1) WO2000046846A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2412494B (en) * 2002-01-17 2006-02-01 Ims Nanofabrication Gmbh Maskless particle-beam system for exposing a pattern on a substrate
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
JP5859778B2 (en) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー Multi-charged particle beam writing apparatus and multi-charged particle beam writing method
JP7128667B2 (en) * 2018-06-12 2022-08-31 株式会社日立ハイテク Charged particle beam controller

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6315043U (en) * 1986-07-15 1988-02-01
US5546319A (en) * 1994-01-28 1996-08-13 Fujitsu Limited Method of and system for charged particle beam exposure
JP3316076B2 (en) * 1994-03-15 2002-08-19 富士通株式会社 Charged particle beam exposure method and exposure apparatus

Also Published As

Publication number Publication date
WO2000046846A1 (en) 2000-08-10
GB2351427A (en) 2000-12-27
JP2000223412A (en) 2000-08-11
KR20010042267A (en) 2001-05-25
GB2351427B (en) 2003-01-22
DE10080405T1 (en) 2001-05-31

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Legal Events

Date Code Title Description
789A Request for publication of translation (sect. 89(a)/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040203