GB2334633B - Low leakage electrostatic discharge protection system - Google Patents

Low leakage electrostatic discharge protection system

Info

Publication number
GB2334633B
GB2334633B GB9803583A GB9803583A GB2334633B GB 2334633 B GB2334633 B GB 2334633B GB 9803583 A GB9803583 A GB 9803583A GB 9803583 A GB9803583 A GB 9803583A GB 2334633 B GB2334633 B GB 2334633B
Authority
GB
United Kingdom
Prior art keywords
protection system
electrostatic discharge
discharge protection
low leakage
leakage electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9803583A
Other languages
English (en)
Other versions
GB2334633A (en
GB9803583D0 (en
Inventor
Jonathan Harry Orchard-Webb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor ULC
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Priority to GB9803583A priority Critical patent/GB2334633B/en
Publication of GB9803583D0 publication Critical patent/GB9803583D0/en
Priority to US09/246,842 priority patent/US6414831B1/en
Priority to CA002261992A priority patent/CA2261992A1/en
Priority to SE9900526A priority patent/SE9900526A0/sv
Priority to FR9901993A priority patent/FR2775392B1/fr
Priority to DE19906857A priority patent/DE19906857A1/de
Publication of GB2334633A publication Critical patent/GB2334633A/en
Application granted granted Critical
Publication of GB2334633B publication Critical patent/GB2334633B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
GB9803583A 1998-02-21 1998-02-21 Low leakage electrostatic discharge protection system Expired - Fee Related GB2334633B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB9803583A GB2334633B (en) 1998-02-21 1998-02-21 Low leakage electrostatic discharge protection system
US09/246,842 US6414831B1 (en) 1998-02-21 1999-02-09 Low leakage electrostatic discharge protection system
CA002261992A CA2261992A1 (en) 1998-02-21 1999-02-16 Low leakage electrostatic discharge protection system
SE9900526A SE9900526A0 (sv) 1998-02-21 1999-02-17 Skyddssystem vid elektrostatiska urladdningar med låg läckning
FR9901993A FR2775392B1 (fr) 1998-02-21 1999-02-18 Systeme de protection vis-a-vis d'une decharge electrostatique a fuite faible
DE19906857A DE19906857A1 (de) 1998-02-21 1999-02-18 Entlade-Schutzschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9803583A GB2334633B (en) 1998-02-21 1998-02-21 Low leakage electrostatic discharge protection system

Publications (3)

Publication Number Publication Date
GB9803583D0 GB9803583D0 (en) 1998-04-15
GB2334633A GB2334633A (en) 1999-08-25
GB2334633B true GB2334633B (en) 2002-09-25

Family

ID=10827303

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9803583A Expired - Fee Related GB2334633B (en) 1998-02-21 1998-02-21 Low leakage electrostatic discharge protection system

Country Status (6)

Country Link
US (1) US6414831B1 (enExample)
CA (1) CA2261992A1 (enExample)
DE (1) DE19906857A1 (enExample)
FR (1) FR2775392B1 (enExample)
GB (1) GB2334633B (enExample)
SE (1) SE9900526A0 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100392027B1 (ko) * 1999-01-19 2003-07-22 세이코 엡슨 가부시키가이샤 반도체 집적 회로
JP2002305254A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
TWI253163B (en) * 2003-06-27 2006-04-11 Realtek Semiconductor Corp Electrostatic discharge protection circuit
KR100605580B1 (ko) * 2003-12-29 2006-07-28 주식회사 하이닉스반도체 정전기 보호회로
US7649726B2 (en) * 2004-08-16 2010-01-19 National Instruments Corporation Protection circuit for general-purpose digital I/O lines
TWI271847B (en) * 2004-12-08 2007-01-21 Au Optronics Corp Electrostatic discharge protection circuit and method of electrostatic discharge protection
CN100414801C (zh) * 2004-12-10 2008-08-27 上海宏力半导体制造有限公司 静电放电保护装置
US20060132996A1 (en) * 2004-12-17 2006-06-22 Poulton John W Low-capacitance electro-static discharge protection
JP2007234718A (ja) * 2006-02-28 2007-09-13 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US20080137243A1 (en) * 2006-12-07 2008-06-12 System General Corp. Esd protection circuit for an integrated circuit with a negative voltage input terminal
US7777998B2 (en) * 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
EP2919262B1 (en) * 2014-03-14 2022-12-21 EM Microelectronic-Marin SA Fault detection assembly
CN105896954B (zh) * 2016-05-24 2019-06-07 深圳市鑫宇鹏电子科技有限公司 一种自适应抗静电增强的智能功率模块
JP2017216325A (ja) * 2016-05-31 2017-12-07 ルネサスエレクトロニクス株式会社 半導体装置
CN112447676A (zh) * 2019-09-03 2021-03-05 长鑫存储技术有限公司 静电保护电路
US11658480B2 (en) 2020-10-13 2023-05-23 Globalfoundries U.S. Inc. Ultra-low leakage electrostatic discharge device with controllable trigger voltage

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296675A2 (en) * 1987-06-23 1988-12-28 Koninklijke Philips Electronics N.V. An integrated circuit with a protection device utilizing one or more subsurface diodes and associated method of manufacture
EP0606667A1 (en) * 1993-01-13 1994-07-20 Koninklijke Philips Electronics N.V. Semiconductor device with an integrated circuit provided with over voltage protection means
US5440162A (en) * 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
GB2286289A (en) * 1994-02-08 1995-08-09 Mitel Corp ESD protection circuit
US5515225A (en) * 1993-08-06 1996-05-07 Sgs-Thomson Microelectronics S.A. Integrated circuit protected against electrostatic overvoltages
WO1996022613A1 (en) * 1995-01-20 1996-07-25 Peregrine Semiconductor Corporation Method and structure for providing esd protection for silicon on insulator integrated circuits
US5696398A (en) * 1993-10-01 1997-12-09 Mitsubishi Denki Kabushiki Kaisha Input protection circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1789063A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Traeger fuer Halbleiterbauelemente
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4536469A (en) * 1981-11-23 1985-08-20 Raytheon Company Semiconductor structures and manufacturing methods
US4590664A (en) * 1983-07-29 1986-05-27 Harris Corporation Method of fabricating low noise reference diodes and transistors
JP2569634B2 (ja) * 1987-11-26 1997-01-08 日本電気株式会社 接合破壊型半導体記憶装置
JPH01198071A (ja) * 1988-02-03 1989-08-09 Mitsubishi Electric Corp クリップダイオード内蔵形トランジスタ
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
EP0568341A2 (en) * 1992-04-30 1993-11-03 Texas Instruments Incorporated Electrostatic discharge protection structure
KR0154702B1 (ko) * 1995-06-09 1998-10-15 김광호 항복전압을 향상시킨 다이오드 제조 방법
US6020222A (en) * 1997-12-16 2000-02-01 Advanced Micro Devices, Inc. Silicon oxide insulator (SOI) semiconductor having selectively linked body

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296675A2 (en) * 1987-06-23 1988-12-28 Koninklijke Philips Electronics N.V. An integrated circuit with a protection device utilizing one or more subsurface diodes and associated method of manufacture
EP0606667A1 (en) * 1993-01-13 1994-07-20 Koninklijke Philips Electronics N.V. Semiconductor device with an integrated circuit provided with over voltage protection means
US5515225A (en) * 1993-08-06 1996-05-07 Sgs-Thomson Microelectronics S.A. Integrated circuit protected against electrostatic overvoltages
US5696398A (en) * 1993-10-01 1997-12-09 Mitsubishi Denki Kabushiki Kaisha Input protection circuit
GB2286289A (en) * 1994-02-08 1995-08-09 Mitel Corp ESD protection circuit
US5440162A (en) * 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
WO1996022613A1 (en) * 1995-01-20 1996-07-25 Peregrine Semiconductor Corporation Method and structure for providing esd protection for silicon on insulator integrated circuits

Also Published As

Publication number Publication date
GB2334633A (en) 1999-08-25
GB9803583D0 (en) 1998-04-15
US6414831B1 (en) 2002-07-02
FR2775392A1 (fr) 1999-08-27
SE9900526A0 (sv) 1999-08-22
FR2775392B1 (fr) 2001-12-14
DE19906857A1 (de) 1999-09-02
CA2261992A1 (en) 1999-08-21
SE9900526L (enExample)
SE9900526D0 (sv) 1999-02-17

Similar Documents

Publication Publication Date Title
GB2304994B (en) Capacitor-couple electrostatic discharge protection circuit
GB2306770B (en) Electrostatic discharge protection device
GB2339074A8 (en) Buffer device with electrostatic discharge protection circuit
EP0760196A4 (en) IMPLANT DEVICE WITH PROTECTION AGAINST ELECTROSTATIC DISCHARGE
TW412065U (en) Electro-static discharge protection circuit
EP0747888A3 (en) MR-head with parasitic screen for protection against electrostatic discharge
DE19781646T1 (de) Spannungstolerante elektrostatische Entladungsschutzeinrichtung
AU5325999A (en) Low electrostatic discharge conveyor
GB2334633B (en) Low leakage electrostatic discharge protection system
GB2335076B (en) Electrostatic discharge protection in semiconductor devices
GB2308741B (en) Electrostatic discharge protection circuit
AU6860798A (en) Arrangement for protection against electrostatic discharge in electronic apparatuses
GB2341016B (en) Line protection devices
AU1463200A (en) Sharps protection system
KR970048839U (en) Discharge equipment
FR2723800B1 (fr) Circuit de protection contre les decharges electrostatiques
GB2344615B (en) Capacitive discharge ignition system
GB2326192B (en) Protection system
GB2307340B (en) Electrostatic discharge protection circuit
GB2336728B (en) Overvoltage protection
GB2334802B (en) Bridge protection system
AU1486399A (en) Protection switching system
GB9820088D0 (en) Acti-life protection system
GB9524186D0 (en) Electrostatic discharge protection device
GB9719674D0 (en) Erosion protection device

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130221