GB2302961A - Photomask - Google Patents

Photomask Download PDF

Info

Publication number
GB2302961A
GB2302961A GB9613662A GB9613662A GB2302961A GB 2302961 A GB2302961 A GB 2302961A GB 9613662 A GB9613662 A GB 9613662A GB 9613662 A GB9613662 A GB 9613662A GB 2302961 A GB2302961 A GB 2302961A
Authority
GB
United Kingdom
Prior art keywords
pattern
shielding film
light shielding
exposure mask
light exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9613662A
Other languages
English (en)
Other versions
GB9613662D0 (en
Inventor
Jin Su Han
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9613662D0 publication Critical patent/GB9613662D0/en
Publication of GB2302961A publication Critical patent/GB2302961A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB9613662A 1995-06-30 1996-06-28 Photomask Withdrawn GB2302961A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018860A KR0160924B1 (ko) 1995-06-30 1995-06-30 노광 마스크

Publications (2)

Publication Number Publication Date
GB9613662D0 GB9613662D0 (en) 1996-08-28
GB2302961A true GB2302961A (en) 1997-02-05

Family

ID=19419279

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9613662A Withdrawn GB2302961A (en) 1995-06-30 1996-06-28 Photomask

Country Status (5)

Country Link
US (1) US5759723A (ko)
KR (1) KR0160924B1 (ko)
CN (1) CN1049298C (ko)
GB (1) GB2302961A (ko)
TW (1) TW353767B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6792029B2 (en) * 2002-03-27 2004-09-14 Sharp Laboratories Of America, Inc. Method of suppressing energy spikes of a partially-coherent beam
US7707541B2 (en) * 2005-09-13 2010-04-27 Luminescent Technologies, Inc. Systems, masks, and methods for photolithography

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216052A (ja) * 1987-03-05 1988-09-08 Fujitsu Ltd 露光方法
US4895780A (en) * 1987-05-13 1990-01-23 General Electric Company Adjustable windage method and mask for correction of proximity effect in submicron photolithography
EP0529971A1 (en) * 1991-08-22 1993-03-03 Nikon Corporation High resolution printing technique by using a mask pattern adapted to the technique
WO1993014445A1 (en) * 1992-01-16 1993-07-22 Microunity Systems Engineering, Inc. Improved mask for photolithography
GB2291219A (en) * 1994-07-05 1996-01-17 Nec Corp Correcting photo-masks

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4936951A (en) * 1987-10-26 1990-06-26 Matsushita Electric Industrial Co., Ltd. Method of reducing proximity effect in electron beam resists
US5057462A (en) * 1989-09-27 1991-10-15 At&T Bell Laboratories Compensation of lithographic and etch proximity effects
DE69131497T2 (de) * 1990-06-21 2000-03-30 Matsushita Electronics Corp Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben
JPH07134395A (ja) * 1993-04-22 1995-05-23 Samsung Electron Co Ltd マスクパターン及びこれを使用した微細パターンの形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216052A (ja) * 1987-03-05 1988-09-08 Fujitsu Ltd 露光方法
US4895780A (en) * 1987-05-13 1990-01-23 General Electric Company Adjustable windage method and mask for correction of proximity effect in submicron photolithography
EP0529971A1 (en) * 1991-08-22 1993-03-03 Nikon Corporation High resolution printing technique by using a mask pattern adapted to the technique
WO1993014445A1 (en) * 1992-01-16 1993-07-22 Microunity Systems Engineering, Inc. Improved mask for photolithography
GB2291219A (en) * 1994-07-05 1996-01-17 Nec Corp Correcting photo-masks

Also Published As

Publication number Publication date
CN1148265A (zh) 1997-04-23
KR970002453A (ko) 1997-01-24
TW353767B (en) 1999-03-01
US5759723A (en) 1998-06-02
KR0160924B1 (ko) 1998-12-15
CN1049298C (zh) 2000-02-09
GB9613662D0 (en) 1996-08-28

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)