GB2263981A - Process for developing and etching compound layers of photoresist and polyimidesimultaneously - Google Patents
Process for developing and etching compound layers of photoresist and polyimidesimultaneously Download PDFInfo
- Publication number
- GB2263981A GB2263981A GB9302508A GB9302508A GB2263981A GB 2263981 A GB2263981 A GB 2263981A GB 9302508 A GB9302508 A GB 9302508A GB 9302508 A GB9302508 A GB 9302508A GB 2263981 A GB2263981 A GB 2263981A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photoresist
- polyimide
- layer
- process according
- additive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 28
- 238000005530 etching Methods 0.000 title claims description 6
- 150000001875 compounds Chemical class 0.000 title description 8
- 239000004642 Polyimide Substances 0.000 claims description 55
- 229920001721 polyimide Polymers 0.000 claims description 55
- 239000000243 solution Substances 0.000 claims description 23
- 239000000654 additive Substances 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 49
- 239000002253 acid Substances 0.000 description 10
- 239000004952 Polyamide Substances 0.000 description 8
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 8
- 229920002647 polyamide Polymers 0.000 description 8
- 238000004090 dissolution Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 229960004592 isopropanol Drugs 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- NJRWLESRYZMVRW-UHFFFAOYSA-N carboxy carboxyoxycarbonyl carbonate Chemical compound OC(=O)OC(=O)OC(=O)OC(O)=O NJRWLESRYZMVRW-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 241000206607 Porphyra umbilicalis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- -1 aliphatic ketones Chemical class 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- WADBLWZNJBKVNO-UHFFFAOYSA-N benzene-1,3-diamine;benzene-1,4-diamine Chemical compound NC1=CC=C(N)C=C1.NC1=CC=CC(N)=C1 WADBLWZNJBKVNO-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- JQFDEVAYLJMJCV-UHFFFAOYSA-N carboxy carboxyoxycarbonyl carbonate;diphenylmethanone Chemical compound OC(=O)OC(=O)OC(=O)OC(O)=O.C=1C=CC=CC=1C(=O)C1=CC=CC=C1 JQFDEVAYLJMJCV-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19924203781 DE4203781C1 (enrdf_load_stackoverflow) | 1992-02-10 | 1992-02-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9302508D0 GB9302508D0 (en) | 1993-03-24 |
| GB2263981A true GB2263981A (en) | 1993-08-11 |
Family
ID=6451305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9302508A Withdrawn GB2263981A (en) | 1992-02-10 | 1993-02-09 | Process for developing and etching compound layers of photoresist and polyimidesimultaneously |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE4203781C1 (enrdf_load_stackoverflow) |
| FR (1) | FR2687232B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2263981A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2265021B (en) * | 1992-03-10 | 1996-02-14 | Nippon Steel Chemical Co | Photosensitive materials and their use in forming protective layers for printed circuit and process for preparation of printed circuit |
| US6287750B1 (en) * | 1996-05-17 | 2001-09-11 | Nec Corporation | Method of manufacturing semiconductor device in which opening can be formed with high precision |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4729941A (en) * | 1984-10-09 | 1988-03-08 | Hoechst Japan Kabushiki Kaisha | Photoresist processing solution with quaternary ammonium hydroxide |
| GB2204316A (en) * | 1987-04-03 | 1988-11-09 | Gen Electric | Photopatterning silicone polyamic acids, dye compositions, and colour filters |
| US4873177A (en) * | 1986-02-24 | 1989-10-10 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a resist pattern on a substrate surface and a scum-remover therefor |
| GB2234365A (en) * | 1989-07-27 | 1991-01-30 | Gec Avery Technology | Strain gauge encapsulation process |
| EP0432622A2 (de) * | 1989-12-15 | 1991-06-19 | BASF Aktiengesellschaft | Verfahren zum Entwickeln von Photoresisten |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120032A (en) * | 1979-03-09 | 1980-09-16 | Daicel Chem Ind Ltd | Treating solution for photosensitive laminate having alcohol-soluble polyamide layer |
| JPS57124349A (en) * | 1981-01-24 | 1982-08-03 | Kimoto & Co Ltd | Image formation method |
| US4426253A (en) * | 1981-12-03 | 1984-01-17 | E. I. Du Pont De Nemours & Co. | High speed etching of polyimide film |
| JPS6362322A (ja) * | 1986-09-03 | 1988-03-18 | Matsushita Electronics Corp | 半導体素子の製造方法 |
| JPH01281730A (ja) * | 1988-05-07 | 1989-11-13 | Seiko Epson Corp | パターン形成方法 |
-
1992
- 1992-02-10 DE DE19924203781 patent/DE4203781C1/de not_active Expired - Fee Related
-
1993
- 1993-02-09 GB GB9302508A patent/GB2263981A/en not_active Withdrawn
- 1993-02-09 FR FR9301397A patent/FR2687232B1/fr not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4729941A (en) * | 1984-10-09 | 1988-03-08 | Hoechst Japan Kabushiki Kaisha | Photoresist processing solution with quaternary ammonium hydroxide |
| US4873177A (en) * | 1986-02-24 | 1989-10-10 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a resist pattern on a substrate surface and a scum-remover therefor |
| GB2204316A (en) * | 1987-04-03 | 1988-11-09 | Gen Electric | Photopatterning silicone polyamic acids, dye compositions, and colour filters |
| GB2234365A (en) * | 1989-07-27 | 1991-01-30 | Gec Avery Technology | Strain gauge encapsulation process |
| EP0432622A2 (de) * | 1989-12-15 | 1991-06-19 | BASF Aktiengesellschaft | Verfahren zum Entwickeln von Photoresisten |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2265021B (en) * | 1992-03-10 | 1996-02-14 | Nippon Steel Chemical Co | Photosensitive materials and their use in forming protective layers for printed circuit and process for preparation of printed circuit |
| US5601905A (en) * | 1992-03-10 | 1997-02-11 | Nippon Steel Chemical Co., Ltd. | Laminate for insulation protection of circuit boards |
| US6287750B1 (en) * | 1996-05-17 | 2001-09-11 | Nec Corporation | Method of manufacturing semiconductor device in which opening can be formed with high precision |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2687232B1 (fr) | 1994-09-16 |
| DE4203781C1 (enrdf_load_stackoverflow) | 1993-09-09 |
| FR2687232A1 (fr) | 1993-08-13 |
| GB9302508D0 (en) | 1993-03-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |