GB2237445B - A semiconductor device fabrication process - Google Patents

A semiconductor device fabrication process

Info

Publication number
GB2237445B
GB2237445B GB8922331A GB8922331A GB2237445B GB 2237445 B GB2237445 B GB 2237445B GB 8922331 A GB8922331 A GB 8922331A GB 8922331 A GB8922331 A GB 8922331A GB 2237445 B GB2237445 B GB 2237445B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fabrication process
device fabrication
semiconductor
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8922331A
Other languages
English (en)
Other versions
GB2237445A (en
GB8922331D0 (en
Inventor
Richard Anthony Alex Rodrigues
Ewen Gillespie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Microelectronics Ltd
Original Assignee
Seagate Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Microelectronics Ltd filed Critical Seagate Microelectronics Ltd
Priority to GB8922331A priority Critical patent/GB2237445B/en
Publication of GB8922331D0 publication Critical patent/GB8922331D0/en
Priority to DE69025916T priority patent/DE69025916T2/de
Priority to PCT/GB1990/001528 priority patent/WO1991005365A1/en
Priority to EP90914752A priority patent/EP0447522B1/en
Priority to SG1996001250A priority patent/SG72609A1/en
Priority to JP2-513657A priority patent/JPH0732164B2/ja
Publication of GB2237445A publication Critical patent/GB2237445A/en
Priority to US08/138,606 priority patent/US5679586A/en
Application granted granted Critical
Publication of GB2237445B publication Critical patent/GB2237445B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W10/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P76/40—
    • H10W10/031—
    • H10W20/021—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/163—Thick-thin oxides
GB8922331A 1989-10-04 1989-10-04 A semiconductor device fabrication process Expired - Fee Related GB2237445B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB8922331A GB2237445B (en) 1989-10-04 1989-10-04 A semiconductor device fabrication process
DE69025916T DE69025916T2 (de) 1989-10-04 1990-10-04 Herstellungsverfahren für eine halbleitervorrichtung
PCT/GB1990/001528 WO1991005365A1 (en) 1989-10-04 1990-10-04 A semiconductor device fabrication process
EP90914752A EP0447522B1 (en) 1989-10-04 1990-10-04 A semiconductor device fabrication process
SG1996001250A SG72609A1 (en) 1989-10-04 1990-10-04 A semiconductor device for fabrication process
JP2-513657A JPH0732164B2 (ja) 1989-10-04 1990-10-04 半導体デバイス製造法
US08/138,606 US5679586A (en) 1989-10-04 1993-10-14 Composite mask process for semiconductor fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8922331A GB2237445B (en) 1989-10-04 1989-10-04 A semiconductor device fabrication process

Publications (3)

Publication Number Publication Date
GB8922331D0 GB8922331D0 (en) 1989-11-22
GB2237445A GB2237445A (en) 1991-05-01
GB2237445B true GB2237445B (en) 1994-01-12

Family

ID=10664022

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8922331A Expired - Fee Related GB2237445B (en) 1989-10-04 1989-10-04 A semiconductor device fabrication process

Country Status (7)

Country Link
US (1) US5679586A (enExample)
EP (1) EP0447522B1 (enExample)
JP (1) JPH0732164B2 (enExample)
DE (1) DE69025916T2 (enExample)
GB (1) GB2237445B (enExample)
SG (1) SG72609A1 (enExample)
WO (1) WO1991005365A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017785A (en) * 1996-08-15 2000-01-25 Integrated Device Technology, Inc. Method for improving latch-up immunity and interwell isolation in a semiconductor device
US6001701A (en) * 1997-06-09 1999-12-14 Lucent Technologies Inc. Process for making bipolar having graded or modulated collector
KR100374243B1 (ko) * 1998-10-08 2003-03-03 미쓰비시덴키 가부시키가이샤 반도체장치 및 그의 제조방법과 반도체장치 보호회로
US6716363B1 (en) 1999-04-20 2004-04-06 Seagate Technology Llc Electrode patterning for a differential PZT activator

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151019A (en) * 1974-12-27 1979-04-24 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
US4277291A (en) * 1979-01-22 1981-07-07 Sgs-Ates Componenti Elettronici S.P.A. Process for making CMOS field-effect transistors
US4280272A (en) * 1977-07-04 1981-07-28 Tokyo Shibaura Denki Kabushiki Kaisha Method for preparing complementary semiconductor device
WO1982003945A1 (en) * 1981-04-27 1982-11-11 Ncr Co Process for manufacturing cmos semiconductor devices
EP0072967A2 (de) * 1981-08-25 1983-03-02 Siemens Aktiengesellschaft Verfahren zum Herstellen von hochintegrierten komplementären MOS-Feldeffekttransistorschaltungen in Siliziumgate-Technologie
GB2128401A (en) * 1982-09-24 1984-04-26 Hitachi Ltd Method of manufacturing semiconductor device
EP0169600A2 (en) * 1984-07-27 1986-01-29 Advanced Micro Devices, Inc. Cmos devices and method of manufacturing the same
EP0244607A1 (de) * 1986-04-08 1987-11-11 Siemens Aktiengesellschaft Verfahren zum Herstellen von optimierten komplementären MOS-Feldeffekttransistoren in VLSI-Technik

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE72967C (de) * TH. HELLER in Berlin S.O., Obmgasse 5 a Form zur Herstellung von Glasstöpseln für Tropfgläser
DE244607C (enExample) *
US3928081A (en) * 1973-10-26 1975-12-23 Signetics Corp Method for fabricating semiconductor devices using composite mask and ion implantation
US3928082A (en) * 1973-12-28 1975-12-23 Texas Instruments Inc Self-aligned transistor process
US3933528A (en) * 1974-07-02 1976-01-20 Texas Instruments Incorporated Process for fabricating integrated circuits utilizing ion implantation
US4018627A (en) * 1975-09-22 1977-04-19 Signetics Corporation Method for fabricating semiconductor devices utilizing oxide protective layer
US4021270A (en) * 1976-06-28 1977-05-03 Motorola, Inc. Double master mask process for integrated circuit manufacture
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
JPS57157541A (en) * 1981-03-24 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS60175451A (ja) * 1984-02-20 1985-09-09 Matsushita Electronics Corp 半導体装置の製造方法
US4648909A (en) * 1984-11-28 1987-03-10 Fairchild Semiconductor Corporation Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits
US4717678A (en) * 1986-03-07 1988-01-05 International Business Machines Corporation Method of forming self-aligned P contact
JPH0812918B2 (ja) * 1986-03-28 1996-02-07 株式会社東芝 半導体装置の製造方法
US5141881A (en) * 1989-04-20 1992-08-25 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit
JPH06101540B2 (ja) * 1989-05-19 1994-12-12 三洋電機株式会社 半導体集積回路の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151019A (en) * 1974-12-27 1979-04-24 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
US4280272A (en) * 1977-07-04 1981-07-28 Tokyo Shibaura Denki Kabushiki Kaisha Method for preparing complementary semiconductor device
US4277291A (en) * 1979-01-22 1981-07-07 Sgs-Ates Componenti Elettronici S.P.A. Process for making CMOS field-effect transistors
WO1982003945A1 (en) * 1981-04-27 1982-11-11 Ncr Co Process for manufacturing cmos semiconductor devices
EP0072967A2 (de) * 1981-08-25 1983-03-02 Siemens Aktiengesellschaft Verfahren zum Herstellen von hochintegrierten komplementären MOS-Feldeffekttransistorschaltungen in Siliziumgate-Technologie
GB2128401A (en) * 1982-09-24 1984-04-26 Hitachi Ltd Method of manufacturing semiconductor device
EP0169600A2 (en) * 1984-07-27 1986-01-29 Advanced Micro Devices, Inc. Cmos devices and method of manufacturing the same
EP0244607A1 (de) * 1986-04-08 1987-11-11 Siemens Aktiengesellschaft Verfahren zum Herstellen von optimierten komplementären MOS-Feldeffekttransistoren in VLSI-Technik

Also Published As

Publication number Publication date
JPH0732164B2 (ja) 1995-04-10
DE69025916D1 (de) 1996-04-18
EP0447522A1 (en) 1991-09-25
US5679586A (en) 1997-10-21
EP0447522B1 (en) 1996-03-13
GB2237445A (en) 1991-05-01
JPH0732164B1 (enExample) 1995-04-10
DE69025916T2 (de) 1996-09-26
GB8922331D0 (en) 1989-11-22
SG72609A1 (en) 2000-09-19
WO1991005365A1 (en) 1991-04-18

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20001004