GB2145243B - Optical lithographic processes - Google Patents

Optical lithographic processes

Info

Publication number
GB2145243B
GB2145243B GB08416345A GB8416345A GB2145243B GB 2145243 B GB2145243 B GB 2145243B GB 08416345 A GB08416345 A GB 08416345A GB 8416345 A GB8416345 A GB 8416345A GB 2145243 B GB2145243 B GB 2145243B
Authority
GB
United Kingdom
Prior art keywords
lithographic processes
optical lithographic
optical
processes
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08416345A
Other versions
GB2145243A (en
GB8416345D0 (en
Inventor
Bruce Frederick Griffing
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB8416345D0 publication Critical patent/GB8416345D0/en
Publication of GB2145243A publication Critical patent/GB2145243A/en
Application granted granted Critical
Publication of GB2145243B publication Critical patent/GB2145243B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
GB08416345A 1983-08-18 1984-06-27 Optical lithographic processes Expired GB2145243B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52449783A 1983-08-18 1983-08-18

Publications (3)

Publication Number Publication Date
GB8416345D0 GB8416345D0 (en) 1984-08-01
GB2145243A GB2145243A (en) 1985-03-20
GB2145243B true GB2145243B (en) 1987-08-26

Family

ID=24089455

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08416345A Expired GB2145243B (en) 1983-08-18 1984-06-27 Optical lithographic processes

Country Status (3)

Country Link
JP (1) JPS6074529A (en)
DE (1) DE3428565A1 (en)
GB (1) GB2145243B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography
JPH0719842B2 (en) * 1985-05-23 1995-03-06 三菱電機株式会社 Redundant circuit of semiconductor device
JPH01241125A (en) * 1988-03-23 1989-09-26 Sony Corp Manufacture of semiconductor device
DE3930655A1 (en) * 1988-09-13 1990-03-22 Mitsubishi Electric Corp Semiconductor module with laminated coupling layer - has coupling section, extending over insulating film on semiconductor substrate main surface
JPH0279463A (en) * 1988-09-14 1990-03-20 Mitsubishi Electric Corp Semiconductor memory
ATE123345T1 (en) * 1989-01-23 1995-06-15 Siemens Ag METHOD FOR PRODUCING A SILICON NITRIDE LAYER AS USED AS AN ANTIREFLECTION LAYER IN PHOTOLITHOGRAPHY PROCESSES IN THE PRODUCTION OF HIGHLY INTEGRATED SEMICONDUCTOR CIRCUITS.
KR950011563B1 (en) * 1990-11-27 1995-10-06 가부시끼가이샤 도시바 Manufacturing method of semiconductor device
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH0590224A (en) * 1991-01-22 1993-04-09 Toshiba Corp Manufacture of semiconductor device
DE4231312C2 (en) * 1992-09-18 1996-10-02 Siemens Ag Anti-reflective layer and method for the lithographic structuring of a layer
US6300253B1 (en) 1998-04-07 2001-10-09 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
US6323139B1 (en) 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
US5926739A (en) 1995-12-04 1999-07-20 Micron Technology, Inc. Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
US5985771A (en) 1998-04-07 1999-11-16 Micron Technology, Inc. Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
US6635530B2 (en) 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
WO2001009683A1 (en) * 1999-08-02 2001-02-08 Infineon Technologies North America Corp. Reduction of resist poisoning

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561533A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Method of photoetching
GB2061615A (en) * 1979-10-25 1981-05-13 Gen Electric Composite conductors for integrated circuits
JPS5680133A (en) * 1979-12-06 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Formation of pattern

Also Published As

Publication number Publication date
JPS6074529A (en) 1985-04-26
GB2145243A (en) 1985-03-20
DE3428565A1 (en) 1985-03-07
GB8416345D0 (en) 1984-08-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee