GB2143085B - A bipolar lateral magnetotransistor - Google Patents

A bipolar lateral magnetotransistor

Info

Publication number
GB2143085B
GB2143085B GB08416766A GB8416766A GB2143085B GB 2143085 B GB2143085 B GB 2143085B GB 08416766 A GB08416766 A GB 08416766A GB 8416766 A GB8416766 A GB 8416766A GB 2143085 B GB2143085 B GB 2143085B
Authority
GB
United Kingdom
Prior art keywords
bipolar lateral
lateral magnetotransistor
magnetotransistor
bipolar
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08416766A
Other languages
English (en)
Other versions
GB2143085A (en
GB8416766D0 (en
Inventor
Yordan Dimitrov Kassabov
Nikolay Dmitrievitch Smirnov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST PHYS TVARDOTO TYALO
Institute Po Physika Na Tvardoto Tyalo
Original Assignee
INST PHYS TVARDOTO TYALO
Institute Po Physika Na Tvardoto Tyalo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST PHYS TVARDOTO TYALO, Institute Po Physika Na Tvardoto Tyalo filed Critical INST PHYS TVARDOTO TYALO
Publication of GB8416766D0 publication Critical patent/GB8416766D0/en
Publication of GB2143085A publication Critical patent/GB2143085A/en
Application granted granted Critical
Publication of GB2143085B publication Critical patent/GB2143085B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
GB08416766A 1983-07-08 1984-07-02 A bipolar lateral magnetotransistor Expired GB2143085B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG8361655A BG37507A1 (en) 1983-07-08 1983-07-08 Bipolar lateral magnetotransistor

Publications (3)

Publication Number Publication Date
GB8416766D0 GB8416766D0 (en) 1984-08-08
GB2143085A GB2143085A (en) 1985-01-30
GB2143085B true GB2143085B (en) 1986-10-29

Family

ID=3912453

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08416766A Expired GB2143085B (en) 1983-07-08 1984-07-02 A bipolar lateral magnetotransistor

Country Status (7)

Country Link
JP (1) JPS6084883A (enrdf_load_stackoverflow)
BG (1) BG37507A1 (enrdf_load_stackoverflow)
DE (1) DE3424631A1 (enrdf_load_stackoverflow)
FR (1) FR2548834B1 (enrdf_load_stackoverflow)
GB (1) GB2143085B (enrdf_load_stackoverflow)
IT (1) IT1199153B (enrdf_load_stackoverflow)
SU (1) SU1702458A1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3733836A1 (de) * 1987-10-07 1989-04-27 Messerschmitt Boelkow Blohm Magnetfeldsonde zur messung der magnetfeldstaerke unter verwendung des halleffektes
US5591996A (en) * 1995-03-24 1997-01-07 Analog Devices, Inc. Recirculating charge transfer magnetic field sensor
RU2127007C1 (ru) * 1998-02-17 1999-02-27 Научно-производственный комплекс "Технологический центр" Московского института электронной техники Магниточувствительный биполярный транзистор
DE10105186A1 (de) * 2001-02-06 2002-08-29 Bosch Gmbh Robert Halbleiteranordnung, Strommesser und Kraftfahrzeug
JP5069776B2 (ja) * 2010-06-28 2012-11-07 パナソニック株式会社 磁気検出装置
RU2439748C1 (ru) * 2010-10-07 2012-01-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования " Национальный исследовательский университет "МИЭТ" (МИЭТ) Планарный биполярный магнитотранзистор
CN107356885B (zh) * 2017-08-18 2023-06-02 黑龙江大学 一种单片集成二维磁场传感器及其制作工艺

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0099979B1 (de) * 1982-07-26 1987-04-08 LGZ LANDIS & GYR ZUG AG Magnetfeldsensor und dessen Verwendung

Also Published As

Publication number Publication date
FR2548834B1 (fr) 1989-01-06
DE3424631C2 (enrdf_load_stackoverflow) 1989-08-31
FR2548834A1 (fr) 1985-01-11
IT8448515A0 (it) 1984-07-05
GB2143085A (en) 1985-01-30
DE3424631A1 (de) 1985-01-17
BG37507A1 (en) 1985-06-14
IT1199153B (it) 1988-12-30
GB8416766D0 (en) 1984-08-08
JPS6084883A (ja) 1985-05-14
SU1702458A1 (ru) 1991-12-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee