GB2143085A - A bipolar lateral magneto- transistor - Google Patents
A bipolar lateral magneto- transistor Download PDFInfo
- Publication number
- GB2143085A GB2143085A GB08416766A GB8416766A GB2143085A GB 2143085 A GB2143085 A GB 2143085A GB 08416766 A GB08416766 A GB 08416766A GB 8416766 A GB8416766 A GB 8416766A GB 2143085 A GB2143085 A GB 2143085A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductivity
- type
- region
- substrate
- inject
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Bipolar Transistors (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
A bipolar lateral magnetotransis- tor comprises a semiconductor substrate (1) with conductivity of a first type and the following regions formed on the upper surface of the substrate (1) in consecutive order, and spaced apart: a first base region (2) with conductivity of the same type as the substrate (1); an inject region (3) with conductivity of a second type; a collector region (4) with conductivity of the second type; and a second base region (5) with conductivity of the first type, there being a second inject region (6), having conductivity of the second type, disposed on the other side of the first base region (2). A magnetic field B in direction 7 influences minority carriers injected from regions 3, 6 and hence the collector current. An output signal is derived from between the collector 4 and base 5. <IMAGE>
Description
SPECIFICATION
A Bipolar Lateral Magnetotransistor
This invention relates to a bipolar lateral magnetotransistor, to be used for example as a sensor of magnetic fields.
There has been proposed a bipolar lateral magnetotransistor, comprising a semiconductor substrate with conductivity of a first type, and the following regions formed on a surface of the substrate in consecutive order and at spaces apart: a first base region with conductivity of the same type as the substrate; an inject region with conductivity of a second type: a collector region with conductivity of the second type; and a second base region with conductivity of the first type. Thus see the literature reference: I.R.S.
Popovic, Baltes, H.P. An Investigation of the sensitivity of Lateral Magnetotransistors, IEEE El.
DeV. Letters, Vol. EDL-4, No. 3, March 1983. An external magnetic field is applied to the side of the magnetotransistor, perpendicularly to the current lines.
A disadvantage of this magnetotransistor is its low sensitivity to magnetic fields at currents greater than 0.5 yA.
According to the present invention there is provided a bipolar lateral magnetotransistor comprising a semiconductor substrate with conductivity-of a first type and the following regions formed on a surface of the substrate in consecutive order, at spaces apart: a first base region with conductivity of the same type as the substrate; an inject region with conductivity of a second type; a collector region with conductivity of the second type; and a second base region with conductivity of the first type, there being a second inject region, having conductivity of the second type, disposed on the other side of the first base region.
A preferred embodiment of this invention may provide a magnetotransistor having good sensitivity to magnetic fields at relatively high collector currents.
Thus, an advantage of a preferred embodiment of the invention may be an enhanced magnetosensitivity of the magnetotransistor, and a capability for the detection of very weak magnetic fields concurrently with an increase of the output collector current by an order of 2 or 3, leading to an increase in the noise-resistance of the device and making it compatible in characteristics with bipolar transistors.
For a better understanding of the invention and to show how it may be put into effect, reference will now be made by way of example to the single figure of the accompanying drawing, which shows a preferred embodiment of the present invention.
The illustrated bipolar lateral magnetotransistor comprises a semiconductor substrate 1 with n-type conductivity, and the following regions formed on the upper surface of the substrate 1 in consecutive order and at spaces apart: a first base region 2 with n-type conductivity; an inject (possibly emitter) region 3 with p-type conductivity; a collector region 4 with p-type conductivity; and a second base region 5 with n-type conductivity. A second inject (possibly emitter) region 6, having p-type conductivity, is disposed on the other side of the first base region 2.
The inject regions 3 and 6 are electrically connected together and are forward-biased, relative to base 5, by an external DC supply U1.
Voltage with the same polarity and from the same source U, is applied to base 2 relative to base 5.
The collector p-n junction is reverse-biased relative to base 5 from a second voltage source U2 through a load resistance RR. An external constant or alternating magnetic field is applied perpendicularly to the side of the
magnetotransistor, and the output signal of the device is taken out between the collector 4 and the base 5.
The operation of the bipolar lateral
magnetotransistor is as follows:
The operational mode of the device is achieved
by means of the supply voltage U1 and adjustable
resistors R1 and R2. The two inject regions 3 and 6
inject, simultaneously, minority carriers in the substrate 1. At that time the inject region 3
operates in negative resistance mode. The
collector current of the magnetotransistor is
determined mainly from the current of the
minority carriers injected in the substrate 1 from
the inject region 3. A magnetic fields acting in the direction of an arrow 7 exerts influence on the
minority carriers injected from the inject regions 3
and 6 and the collector current is increased or
decreased according to the direction and/or
strength of the magnetic field.
The described and illustrated embodiment
provides a device which can be used as a
magnetic field sensor.
The device provides a bipolar lateral
magnetotransistor which comprises a
semiconductor substrate and regions with
different conductivities formed on the upper
surface of the substrate. The collector current of
the magnetotransistor is a function of the
magnetic field applied perpendicularly to the side
of the device, which has high sensitity to such
magnetic fields.
The advantages of the device are its enhanced
magneto-sensitivity together with its capability
for detecting very weak magnetic fields
concurrently with the increase of its output
collector current.
Claims (2)
1. A bipolar lateral magnetotransistor
comprising a semiconductor substrate with
conductivity of a first type and the following
regions formed on a surface of the substrate in
consecutive order, at spaces apart: a first base
region with conductivity of the same type as the
substrate; an inject region with conductivity of a
second type, a collector region with conductivity
of the second type; and a second base region with conductivity of the first type, there being a second inject region, having conductivity of the second type, disposed on the other side of the first base region.
2. A bipolar lateral magnetotransistor substantially as hereinbefore described with reference to the single Figure of the accompanying drawing.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BG8361655A BG37507A1 (en) | 1983-07-08 | 1983-07-08 | Bipolar lateral magnetotransistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8416766D0 GB8416766D0 (en) | 1984-08-08 |
| GB2143085A true GB2143085A (en) | 1985-01-30 |
| GB2143085B GB2143085B (en) | 1986-10-29 |
Family
ID=3912453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08416766A Expired GB2143085B (en) | 1983-07-08 | 1984-07-02 | A bipolar lateral magnetotransistor |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS6084883A (en) |
| BG (1) | BG37507A1 (en) |
| DE (1) | DE3424631A1 (en) |
| FR (1) | FR2548834B1 (en) |
| GB (1) | GB2143085B (en) |
| IT (1) | IT1199153B (en) |
| SU (1) | SU1702458A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591996A (en) * | 1995-03-24 | 1997-01-07 | Analog Devices, Inc. | Recirculating charge transfer magnetic field sensor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3733836A1 (en) * | 1987-10-07 | 1989-04-27 | Messerschmitt Boelkow Blohm | Magnetic field probe for measuring the magnetic field strength by using the Hall effect |
| DE10105186A1 (en) * | 2001-02-06 | 2002-08-29 | Bosch Gmbh Robert | Semiconductor device, ammeter and motor vehicle |
| JP5069776B2 (en) * | 2010-06-28 | 2012-11-07 | パナソニック株式会社 | Magnetic detector |
| CN107356885B (en) * | 2017-08-18 | 2023-06-02 | 黑龙江大学 | Monolithic integrated two-dimensional magnetic field sensor and manufacturing process thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3370875D1 (en) * | 1982-07-26 | 1987-05-14 | Landis & Gyr Ag | Magnetic field sensor and the use thereof |
-
1983
- 1983-07-08 BG BG8361655A patent/BG37507A1/en unknown
-
1984
- 1984-07-02 GB GB08416766A patent/GB2143085B/en not_active Expired
- 1984-07-04 DE DE19843424631 patent/DE3424631A1/en active Granted
- 1984-07-05 IT IT48515/84A patent/IT1199153B/en active
- 1984-07-05 SU SU847773490A patent/SU1702458A1/en active
- 1984-07-05 JP JP59138056A patent/JPS6084883A/en active Pending
- 1984-07-06 FR FR8410740A patent/FR2548834B1/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591996A (en) * | 1995-03-24 | 1997-01-07 | Analog Devices, Inc. | Recirculating charge transfer magnetic field sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1199153B (en) | 1988-12-30 |
| BG37507A1 (en) | 1985-06-14 |
| JPS6084883A (en) | 1985-05-14 |
| FR2548834A1 (en) | 1985-01-11 |
| GB2143085B (en) | 1986-10-29 |
| SU1702458A1 (en) | 1991-12-30 |
| GB8416766D0 (en) | 1984-08-08 |
| DE3424631A1 (en) | 1985-01-17 |
| DE3424631C2 (en) | 1989-08-31 |
| FR2548834B1 (en) | 1989-01-06 |
| IT8448515A0 (en) | 1984-07-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |