FR2548834A1 - BIPOLAR LATERAL MAGNETOTRANSISTOR - Google Patents
BIPOLAR LATERAL MAGNETOTRANSISTOR Download PDFInfo
- Publication number
- FR2548834A1 FR2548834A1 FR8410740A FR8410740A FR2548834A1 FR 2548834 A1 FR2548834 A1 FR 2548834A1 FR 8410740 A FR8410740 A FR 8410740A FR 8410740 A FR8410740 A FR 8410740A FR 2548834 A1 FR2548834 A1 FR 2548834A1
- Authority
- FR
- France
- Prior art keywords
- conduction mode
- region
- magnetotransistor
- base region
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 claims abstract description 11
- 239000007924 injection Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Bipolar Transistors (AREA)
Abstract
MAGNETOTRANSISTOR LATERAL BIPOLAIRE COMPRENANT UN SUBSTRAT SEMI-CONDUCTEUR 1 AYANT UN PREMIER MODE DE CONDUCTION ET LES REGIONS SUIVANTES FORMEES SUR LA FACE SUPERIEURE DU SUBSTRAT, DANS L'ORDRE, AVEC UN CERTAIN ESPACEMENT: UNE PREMIERE REGION DE BASE 2 AYANT LE MEME MODE DE CONDUCTION, UNE REGION D'INJECTION 3 AYANT UN SECOND MODE DE CONDUCTION, UNE REGION DE COLLECTEUR 4 AYANT LE SECOND MODE DE CONDUCTION ET UNE SECONDE REGION DE BASE 5 AYANT LE PREMIER MODE DE CONDUCTION, CARACTERISE PAR UNE SECONDE REGION D'INJECTION 6 AYANT LE SECOND MODE DE CONDUCTION DISPOSE DE L'AUTRE COTE DE LA PREMIERE REGION DE BASE 2. L'AVANTAGE DE L'INVENTION RESIDE DANS SA PLUS GRANDE SENSIBILITE MAGNETIQUE JOINTE A SA CAPACITE DE DETECTER DE TRES FAIBLES CHAMPS MAGNETIQUES AVEC UNE AUGMENTATION DU COURANT DE COLLECTEUR.BIPOLAR LATERAL MAGNETOTRANSISTOR CONSISTING OF A SEMICONDUCTOR SUBSTRATE 1 HAVING A FIRST CONDUCTION MODE AND THE FOLLOWING REGIONS SHAPED ON THE UPPER FACE OF THE SUBSTRATE, IN ORDER, WITH CERTAIN SPACING: A FIRST BASE REGION 2 HAVING THE SAME CONDUCTION MODE , ONE INJECTION REGION 3 HAVING A SECOND CONDUCTION MODE, A COLLECTOR REGION 4 HAVING THE SECOND CONDUCTION MODE AND A SECOND BASE REGION 5 HAVING THE FIRST CONDUCTION MODE, CHARACTERIZED BY A SECOND INJECTION REGION 6 WITH THE SECOND CONDUCTION MODE. SECOND CONDUCTION MODE HAS THE OTHER SIDE OF THE FIRST BASE REGION 2. THE ADVANTAGE OF THE INVENTION RESIDES IN ITS GREATER MAGNETIC SENSITIVITY COMBINED WITH ITS ABILITY TO DETECT VERY LOW MAGNETIC FIELDS WITH AN INCREASE IN THE COLLECTOR CURRENT .
Description
La présente invention se rapporte à un magnétotransistor latéralThe present invention relates to a lateral magnetotransistor
bipolaire utilisé pour détecter les cham m agnétiques. Bipolar used to detect mammalian drugs.
On connaît un magnétotransistor latéral bipolaire qui comprend un substrat semi-conducteur ayant un premier mode de conduction et comportant les régions suivantes formées sur la face supérieure de ce substrat, dans l'ordre, et avec un certain espacement: une première région de base ayant A bipolar side magnetotransistor is known which comprises a semiconductor substrate having a first conduction mode and having the following regions formed on the upper face of this substrate, in order, and with a certain spacing: a first base region having
le mênme mode de conduction que le substrat, une région d'injection ayant un. the same conduction mode as the substrate, an injection region having a.
second mode de conduction, une région de collecteur ayant le second mode de conduction et une seconderégion de base ayant le premier mode de conduction. 10 Le chamr, magnetique externe est apliqu 6 sur le c 8 té du magnétotransistor, second conduction mode, a collector region having the second conduction mode and a second base region having the first conduction mode. The external magnetic chamber is applied to the magnetotransistor side.
perpendiculairemrent à la direction du courant. perpendicular to the current direction.
Le défaut de ce magnétotransistor réside dans sa faible sensibilité The defect of this magnetotransistor lies in its low sensitivity
aux champs magnétiques, pour des courants supérieurs A O,5-A. magnetic fields, for currents greater than O, 5-A.
Le but de l'invention est de réaliser un mnagnétotransistor ayant une sensibilité élevée aux champs magnétiques pour des courants de collecteur élevés L'invention atteint le but qu'elle s'est fixé par un magnétotransistor latéral bipolaire qui comprend un substrat semiconducteur ayant un premier mode de conduction et les regions suivantes formées sur la face 20 supérieure du substrat, dans l'ordre, et avec un certain espacement: une première région de base ayant le même mode de conduction, une région d'injection ayant un second mode de conduction, une région de collecteur ayant le second mode de conduction et une seconde région de base ayant le premier mode de conduction Ce magnétotransistor latéral bipolaire diffère par une 25 seconde région d'injection ayant le second mode de conduction, formée sur The object of the invention is to provide a magnetotransistor having a high sensitivity to magnetic fields for high collector currents. The invention achieves the goal which it has fixed by a bipolar side magnetotransistor which comprises a semiconductor substrate having a first conduction mode and the following regions formed on the upper face of the substrate, in order, and with a certain spacing: a first base region having the same conduction mode, an injection region having a second conduction mode , a collector region having the second conduction mode and a second base region having the first conduction mode This bipolar lateral magnetotransistor differs by a second injection region having the second conduction mode, formed on
l'autre côté de la première région de base. the other side of the first base region.
Les avantages de l'invention résident dans une sensibilité magnétique renforcée du magnétotransistor qui en fait l'objet et dans son aptitude à détecter des champs magnétiques très faibles, avec une augmentation du The advantages of the invention lie in the enhanced magnetic sensitivity of the magnetotransistor which is subject to it and in its ability to detect very weak magnetic fields, with an increase in
courant de collecteur de l'ordre de 2 ou 3, ce qui se traduit par une augmentation de la résistance au bruit du dispositif et fait que ses caractéristiques sont compatibles avec celles des transistors bipolaires. collector current of the order of 2 or 3, which results in an increase in noise resistance of the device and that its characteristics are compatible with those of bipolar transistors.
Le magnétotransistor latéral bipolaire est décrit plus en détail, The bipolar side magnetotransistor is described in more detail,
à titre d'exemple, sur la figure unique du dessin annexé qui représente la 35 construction du dispositif et ses connexions externes. for example, in the single figure of the accompanying drawing which shows the construction of the device and its external connections.
Le magnétotransistor latéral bipolaire représenté comprend un substrat semi-conducteur 1 ayant le mode de conduction N et à la face supérieure duquel sont formées, dans l'ordre, et avec un certain espacement, les régions suivantes: une premiere région de base 2 de type n, une région d'injection 3 de type p, une région de collecteur 4 de type-p et une seconde région de base 5 ayant le mode de conduction n Une seconde région d'injection The bipolar side magnetotransistor shown comprises a semiconductor substrate 1 having the conduction mode N and at the upper face of which are formed, in order and with a certain spacing, the following regions: a first base region 2 of type n, a p-type injection region 3, a p-type collector region 4 and a second base region 5 having the conduction mode n A second injection region
6, de type p, est disposée sur l'autre côté de la première région de base 2. 6, of type p, is disposed on the other side of the first base region 2.
Les régions d'injection 3 et 6 sont reliées ensemble et sont polarisées en sens direct par rapport à la base 5 au moyen d'une source électri10 que continue externe U 1 Une tension ayant la même polarité et provenant de la même source électrique U 1 est appliquée à la base 2 par rapport à la base La jonction p-n entre le collecteur et la base 5 est polarisée en sens inverse par une seconde source électrique U 2 à travers une résistance de charge RK Un champ magnétique externe constant ou alternatif est appliqué perpendiculairement au côté du magnétotransistor et le signal de sortie est The injection regions 3 and 6 are connected together and are forward biased with respect to the base 5 by means of an external continuous electrical source U 1 A voltage having the same polarity and coming from the same electrical source U 1 is applied to the base 2 relative to the base The pn junction between the collector and the base 5 is biased in the opposite direction by a second electrical source U 2 through a load resistor RK A constant or alternating external magnetic field is applied perpendicularly next to the magnetotransistor and the output signal is
prélevé entre le collecteur 4 et la base 5. taken between the collector 4 and the base 5.
Le fonctionnement de ce magnétotransistor latéral bipolaire est le suivant: Les conditions de fonctionnement du dispositif sont réalisées au 20 moyen de la tension d'alimentation U 1 et des résistances réglables R 1 et R 2 Les deux régions 3 et 6 injectent simultanément des porteurs électrisés minoritaires dans le substrat 1 Dans ces conditions, la région d'injection 3 opère avec une résistance négative Le courant de collecteur du magnétotransistor est principalement déterminé par les porteurs électrisés mino25 ritaires injectés dans le substrat 1 par la région d'injection 3 Le champ magnétique B exerce sur les porteurs minoritaires injectés par les régions 3 et 6, une influence qui augmente ou diminue l'intensité du courant de The operation of this bipolar side magnetotransistor is as follows: The operating conditions of the device are realized by means of the supply voltage U 1 and the adjustable resistors R 1 and R 2. The two regions 3 and 6 simultaneously inject electrified carriers. In these conditions, the injection region 3 operates with a negative resistance. The collector current of the magnetotransistor is mainly determined by the minute electrified carriers injected into the substrate 1 by the injection region 3. The magnetic field B exerts on the minority carriers injected by the regions 3 and 6, an influence which increases or decreases the intensity of the current of
collecteur selon la direction du champ magnétique. collector according to the direction of the magnetic field.
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BG8361655A BG37507A1 (en) | 1983-07-08 | 1983-07-08 | Bipolar lateral magnetotransistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2548834A1 true FR2548834A1 (en) | 1985-01-11 |
| FR2548834B1 FR2548834B1 (en) | 1989-01-06 |
Family
ID=3912453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8410740A Expired FR2548834B1 (en) | 1983-07-08 | 1984-07-06 | BIPOLAR LATERAL MAGNETOTRANSISTOR |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS6084883A (en) |
| BG (1) | BG37507A1 (en) |
| DE (1) | DE3424631A1 (en) |
| FR (1) | FR2548834B1 (en) |
| GB (1) | GB2143085B (en) |
| IT (1) | IT1199153B (en) |
| SU (1) | SU1702458A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3733836A1 (en) * | 1987-10-07 | 1989-04-27 | Messerschmitt Boelkow Blohm | Magnetic field probe for measuring the magnetic field strength by using the Hall effect |
| US5591996A (en) * | 1995-03-24 | 1997-01-07 | Analog Devices, Inc. | Recirculating charge transfer magnetic field sensor |
| DE10105186A1 (en) * | 2001-02-06 | 2002-08-29 | Bosch Gmbh Robert | Semiconductor device, ammeter and motor vehicle |
| JP5069776B2 (en) * | 2010-06-28 | 2012-11-07 | パナソニック株式会社 | Magnetic detector |
| CN107356885B (en) * | 2017-08-18 | 2023-06-02 | 黑龙江大学 | Monolithic integrated two-dimensional magnetic field sensor and manufacturing process thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3370875D1 (en) * | 1982-07-26 | 1987-05-14 | Landis & Gyr Ag | Magnetic field sensor and the use thereof |
-
1983
- 1983-07-08 BG BG8361655A patent/BG37507A1/en unknown
-
1984
- 1984-07-02 GB GB08416766A patent/GB2143085B/en not_active Expired
- 1984-07-04 DE DE19843424631 patent/DE3424631A1/en active Granted
- 1984-07-05 SU SU847773490A patent/SU1702458A1/en active
- 1984-07-05 IT IT48515/84A patent/IT1199153B/en active
- 1984-07-05 JP JP59138056A patent/JPS6084883A/en active Pending
- 1984-07-06 FR FR8410740A patent/FR2548834B1/en not_active Expired
Non-Patent Citations (2)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN, vol. 25, no. 12, Mai 1983, pages 6719-6720, New York, US; A.W. VINAL: "Magnetic transistor DC offset voltage balance control" * |
| IEEE ELECTRON DEVICE LETTERS, vol. EDL-4, no. 3, mars 1983, pages 51-53, IEEE, New York, US; R.S. POPOVIC et al.: "An investigation of the sensitivity of lateral magnetotransistors" * |
Also Published As
| Publication number | Publication date |
|---|---|
| IT8448515A0 (en) | 1984-07-05 |
| DE3424631C2 (en) | 1989-08-31 |
| JPS6084883A (en) | 1985-05-14 |
| DE3424631A1 (en) | 1985-01-17 |
| SU1702458A1 (en) | 1991-12-30 |
| IT1199153B (en) | 1988-12-30 |
| GB2143085A (en) | 1985-01-30 |
| GB2143085B (en) | 1986-10-29 |
| FR2548834B1 (en) | 1989-01-06 |
| GB8416766D0 (en) | 1984-08-08 |
| BG37507A1 (en) | 1985-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |