IT1199153B - BIPOLAR LATERAL MAGNETOTRANSISTOR - Google Patents

BIPOLAR LATERAL MAGNETOTRANSISTOR

Info

Publication number
IT1199153B
IT1199153B IT48515/84A IT4851584A IT1199153B IT 1199153 B IT1199153 B IT 1199153B IT 48515/84 A IT48515/84 A IT 48515/84A IT 4851584 A IT4851584 A IT 4851584A IT 1199153 B IT1199153 B IT 1199153B
Authority
IT
Italy
Prior art keywords
bipolar lateral
lateral magnetotransistor
magnetotransistor
bipolar
lateral
Prior art date
Application number
IT48515/84A
Other languages
Italian (it)
Other versions
IT8448515A0 (en
Inventor
Yordan Dimitrov Kassabov
Nikolay Dmitrievitch Smirnov
Original Assignee
Inst Phys Tvardoto Tyalo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Phys Tvardoto Tyalo filed Critical Inst Phys Tvardoto Tyalo
Publication of IT8448515A0 publication Critical patent/IT8448515A0/en
Application granted granted Critical
Publication of IT1199153B publication Critical patent/IT1199153B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Magnetic Variables (AREA)
IT48515/84A 1983-07-08 1984-07-05 BIPOLAR LATERAL MAGNETOTRANSISTOR IT1199153B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG8361655A BG37507A1 (en) 1983-07-08 1983-07-08 Bipolar lateral magnetotransistor

Publications (2)

Publication Number Publication Date
IT8448515A0 IT8448515A0 (en) 1984-07-05
IT1199153B true IT1199153B (en) 1988-12-30

Family

ID=3912453

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48515/84A IT1199153B (en) 1983-07-08 1984-07-05 BIPOLAR LATERAL MAGNETOTRANSISTOR

Country Status (7)

Country Link
JP (1) JPS6084883A (en)
BG (1) BG37507A1 (en)
DE (1) DE3424631A1 (en)
FR (1) FR2548834B1 (en)
GB (1) GB2143085B (en)
IT (1) IT1199153B (en)
SU (1) SU1702458A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3733836A1 (en) * 1987-10-07 1989-04-27 Messerschmitt Boelkow Blohm Magnetic field probe for measuring the magnetic field strength by using the Hall effect
US5591996A (en) * 1995-03-24 1997-01-07 Analog Devices, Inc. Recirculating charge transfer magnetic field sensor
DE10105186A1 (en) * 2001-02-06 2002-08-29 Bosch Gmbh Robert Semiconductor device, ammeter and motor vehicle
JP5069776B2 (en) * 2010-06-28 2012-11-07 パナソニック株式会社 Magnetic detector
CN107356885B (en) * 2017-08-18 2023-06-02 黑龙江大学 Monolithic integrated two-dimensional magnetic field sensor and manufacturing process thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3370875D1 (en) * 1982-07-26 1987-05-14 Landis & Gyr Ag Magnetic field sensor and the use thereof

Also Published As

Publication number Publication date
BG37507A1 (en) 1985-06-14
JPS6084883A (en) 1985-05-14
GB2143085A (en) 1985-01-30
FR2548834A1 (en) 1985-01-11
GB2143085B (en) 1986-10-29
SU1702458A1 (en) 1991-12-30
GB8416766D0 (en) 1984-08-08
DE3424631A1 (en) 1985-01-17
DE3424631C2 (en) 1989-08-31
FR2548834B1 (en) 1989-01-06
IT8448515A0 (en) 1984-07-05

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