FR2548834B1 - Magnetotransistor lateral bipolaire - Google Patents

Magnetotransistor lateral bipolaire

Info

Publication number
FR2548834B1
FR2548834B1 FR8410740A FR8410740A FR2548834B1 FR 2548834 B1 FR2548834 B1 FR 2548834B1 FR 8410740 A FR8410740 A FR 8410740A FR 8410740 A FR8410740 A FR 8410740A FR 2548834 B1 FR2548834 B1 FR 2548834B1
Authority
FR
France
Prior art keywords
bipolar lateral
lateral magnetotransistor
magnetotransistor
bipolar
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8410740A
Other languages
English (en)
French (fr)
Other versions
FR2548834A1 (fr
Inventor
Yordan Dimitrov Kassabov
Nikolay Dmitrievitch Smirnov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST PHYS TVARDOTO TYALO
Original Assignee
INST PHYS TVARDOTO TYALO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST PHYS TVARDOTO TYALO filed Critical INST PHYS TVARDOTO TYALO
Publication of FR2548834A1 publication Critical patent/FR2548834A1/fr
Application granted granted Critical
Publication of FR2548834B1 publication Critical patent/FR2548834B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
FR8410740A 1983-07-08 1984-07-06 Magnetotransistor lateral bipolaire Expired FR2548834B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG8361655A BG37507A1 (en) 1983-07-08 1983-07-08 Bipolar lateral magnetotransistor

Publications (2)

Publication Number Publication Date
FR2548834A1 FR2548834A1 (fr) 1985-01-11
FR2548834B1 true FR2548834B1 (fr) 1989-01-06

Family

ID=3912453

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8410740A Expired FR2548834B1 (fr) 1983-07-08 1984-07-06 Magnetotransistor lateral bipolaire

Country Status (7)

Country Link
JP (1) JPS6084883A (enrdf_load_stackoverflow)
BG (1) BG37507A1 (enrdf_load_stackoverflow)
DE (1) DE3424631A1 (enrdf_load_stackoverflow)
FR (1) FR2548834B1 (enrdf_load_stackoverflow)
GB (1) GB2143085B (enrdf_load_stackoverflow)
IT (1) IT1199153B (enrdf_load_stackoverflow)
SU (1) SU1702458A1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3733836A1 (de) * 1987-10-07 1989-04-27 Messerschmitt Boelkow Blohm Magnetfeldsonde zur messung der magnetfeldstaerke unter verwendung des halleffektes
US5591996A (en) * 1995-03-24 1997-01-07 Analog Devices, Inc. Recirculating charge transfer magnetic field sensor
RU2127007C1 (ru) * 1998-02-17 1999-02-27 Научно-производственный комплекс "Технологический центр" Московского института электронной техники Магниточувствительный биполярный транзистор
DE10105186A1 (de) * 2001-02-06 2002-08-29 Bosch Gmbh Robert Halbleiteranordnung, Strommesser und Kraftfahrzeug
JP5069776B2 (ja) * 2010-06-28 2012-11-07 パナソニック株式会社 磁気検出装置
RU2439748C1 (ru) * 2010-10-07 2012-01-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования " Национальный исследовательский университет "МИЭТ" (МИЭТ) Планарный биполярный магнитотранзистор
CN107356885B (zh) * 2017-08-18 2023-06-02 黑龙江大学 一种单片集成二维磁场传感器及其制作工艺

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3370875D1 (en) * 1982-07-26 1987-05-14 Landis & Gyr Ag Magnetic field sensor and the use thereof

Also Published As

Publication number Publication date
JPS6084883A (ja) 1985-05-14
DE3424631A1 (de) 1985-01-17
BG37507A1 (en) 1985-06-14
SU1702458A1 (ru) 1991-12-30
GB2143085B (en) 1986-10-29
FR2548834A1 (fr) 1985-01-11
IT8448515A0 (it) 1984-07-05
IT1199153B (it) 1988-12-30
GB2143085A (en) 1985-01-30
GB8416766D0 (en) 1984-08-08
DE3424631C2 (enrdf_load_stackoverflow) 1989-08-31

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Legal Events

Date Code Title Description
ST Notification of lapse