GB2087315B - Plasma etching of aluminum - Google Patents
Plasma etching of aluminumInfo
- Publication number
- GB2087315B GB2087315B GB8140894A GB8130894A GB2087315B GB 2087315 B GB2087315 B GB 2087315B GB 8140894 A GB8140894 A GB 8140894A GB 8130894 A GB8130894 A GB 8130894A GB 2087315 B GB2087315 B GB 2087315B
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminum
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/267—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19661680A | 1980-10-14 | 1980-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2087315A GB2087315A (en) | 1982-05-26 |
| GB2087315B true GB2087315B (en) | 1984-07-18 |
Family
ID=22726125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8140894A Expired GB2087315B (en) | 1980-10-14 | 1981-10-13 | Plasma etching of aluminum |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS57123978A (enExample) |
| DE (1) | DE3140675A1 (enExample) |
| GB (1) | GB2087315B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4505782A (en) * | 1983-03-25 | 1985-03-19 | Lfe Corporation | Plasma reactive ion etching of aluminum and aluminum alloys |
| JPH061770B2 (ja) * | 1984-01-30 | 1994-01-05 | 株式会社日立製作所 | ドライエツチング方法 |
| GB2171360A (en) * | 1985-02-19 | 1986-08-28 | Oerlikon Buehrle Inc | Etching aluminum/copper alloy films |
| JPS61235576A (ja) * | 1985-04-10 | 1986-10-20 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
| JP2681058B2 (ja) * | 1986-04-03 | 1997-11-19 | アネルバ株式会社 | ドライエッチング方法 |
| JPH0727890B2 (ja) * | 1986-09-19 | 1995-03-29 | 日本電気株式会社 | ドライエツチング方法 |
| DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
| DE3940820C2 (de) * | 1989-12-11 | 1998-07-09 | Leybold Ag | Verfahren zur Behandlung von Werkstücken durch reaktives Ionenätzen |
| US5397433A (en) * | 1993-08-20 | 1995-03-14 | Vlsi Technology, Inc. | Method and apparatus for patterning a metal layer |
| JP6061384B2 (ja) * | 2013-01-17 | 2017-01-18 | 国立大学法人静岡大学 | アルミ・樹脂接合体の製造方法及びアルミ・樹脂接合体 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
| US4182646A (en) * | 1978-07-27 | 1980-01-08 | John Zajac | Process of etching with plasma etch gas |
| US4208241A (en) * | 1978-07-31 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| US4256534A (en) * | 1978-07-31 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| FR2432560A1 (fr) * | 1978-08-02 | 1980-02-29 | Texas Instruments Inc | Procede de decapage de metaux, en particulier d'aluminium, au plasma de tetrachlorure de silicium |
| US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
-
1981
- 1981-10-13 GB GB8140894A patent/GB2087315B/en not_active Expired
- 1981-10-13 DE DE19813140675 patent/DE3140675A1/de active Granted
- 1981-10-14 JP JP56164875A patent/JPS57123978A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3140675C2 (enExample) | 1991-03-07 |
| JPS57123978A (en) | 1982-08-02 |
| JPH0245714B2 (enExample) | 1990-10-11 |
| DE3140675A1 (de) | 1982-06-16 |
| GB2087315A (en) | 1982-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19971013 |