GB2085227B - Semiconductor device having localized electroluminescent diodes - Google Patents

Semiconductor device having localized electroluminescent diodes

Info

Publication number
GB2085227B
GB2085227B GB8129790A GB8129790A GB2085227B GB 2085227 B GB2085227 B GB 2085227B GB 8129790 A GB8129790 A GB 8129790A GB 8129790 A GB8129790 A GB 8129790A GB 2085227 B GB2085227 B GB 2085227B
Authority
GB
United Kingdom
Prior art keywords
localized
semiconductor device
electroluminescent diodes
electroluminescent
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8129790A
Other languages
English (en)
Other versions
GB2085227A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2085227A publication Critical patent/GB2085227A/en
Application granted granted Critical
Publication of GB2085227B publication Critical patent/GB2085227B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
GB8129790A 1980-10-06 1981-10-02 Semiconductor device having localized electroluminescent diodes Expired GB2085227B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8021346A FR2491714A1 (fr) 1980-10-06 1980-10-06 Dispositif semi-conducteur a diodes electroluminescentes localisees et son procede de fabrication

Publications (2)

Publication Number Publication Date
GB2085227A GB2085227A (en) 1982-04-21
GB2085227B true GB2085227B (en) 1984-06-06

Family

ID=9246580

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8129790A Expired GB2085227B (en) 1980-10-06 1981-10-02 Semiconductor device having localized electroluminescent diodes

Country Status (4)

Country Link
JP (1) JPS5791576A (enrdf_load_stackoverflow)
DE (1) DE3138804A1 (enrdf_load_stackoverflow)
FR (1) FR2491714A1 (enrdf_load_stackoverflow)
GB (1) GB2085227B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736449B2 (ja) * 1984-11-02 1995-04-19 ゼロツクス コーポレーシヨン 発光ダイオード印刷アレイの製造法
FR2573897B1 (fr) * 1984-11-23 1987-03-20 Radiotechnique Compelec Matrice de diodes electroluminescentes et son procede de fabrication
KR910006706B1 (ko) * 1988-12-12 1991-08-31 삼성전자 주식회사 발광다이오드 어레이 헤드의 제조방법
KR940005454B1 (ko) * 1991-04-03 1994-06-18 삼성전자 주식회사 화합물반도체장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2080849A6 (enrdf_load_stackoverflow) * 1970-02-06 1971-11-26 Radiotechnique Compelec
DE2235865A1 (de) * 1972-07-21 1974-01-31 Licentia Gmbh Halbleiteranordnung aus einer vielzahl von in einem gemeinsamen halbleiterkoerper untergebrachten halbleiterbauelementen
JPS5193688A (en) * 1975-02-14 1976-08-17 Matorikusuno seizohoho
US4032373A (en) * 1975-10-01 1977-06-28 Ncr Corporation Method of manufacturing dielectrically isolated semiconductive device
JPS54117692A (en) * 1978-03-03 1979-09-12 Nec Corp Semiconductor light emitting diode

Also Published As

Publication number Publication date
FR2491714B1 (enrdf_load_stackoverflow) 1984-04-13
GB2085227A (en) 1982-04-21
FR2491714A1 (fr) 1982-04-09
JPS5791576A (en) 1982-06-07
DE3138804A1 (de) 1982-06-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921002